Hybrid Schottky barrier diode structure with P-type nickel oxide material

Abstract

The invention relates to a hybrid Schottky barrier diode structure with a P-type nickel oxide material. The structure comprises a bottom ohmic contact electrode, an N+ substrate, an N-drift layer, a groove, a P-type layer, a field plate dielectric layer, field plate metal and a Schottky contact electrode, the N-drift layer is of a step structure, and p-NiO materials are grown on selected areas on the two sides of a table top to replace P-type wide bandgap semiconductor materials. Therefore, the problem that a P-type epitaxial growth technology and an ion implantation technology of a wide bandgap semiconductor material at the present stage are immature can be well solved. The structure is high in operability, low in cost, simple and reliable in process and suitable for industrial application and popularization.

Description

technical field [0001] The invention relates to the field of power electronic devices, in particular to a hybrid Schottky barrier diode structure and a preparation method with p-type nickel oxide (p-NiO) material. Background technique [0002] Power semiconductor devices are also called power electronic devices. With the continuous development of power electronics theory and technology, and under the theme of vigorously advocating energy conservation in the country, power semiconductor devices, as an important part of energy conversion, are rapidly being used in industrial production, electrical equipment, Rail transportation, national defense and military, aerospace, new energy systems, and daily life have received extensive attention and applications. In recent years, wide bandgap semiconductor materials such as SiC, GaN, Ga 2 o 3 etc. have received extensive attention from many researchers, especially the application of GaN power diodes has been fully developed, and gra...

AI Technical Summary

Problems solved by technology

However, for wide-bandgap semiconductors, the further development of TJBS is limited by the lack of effective P-type dopant ions, low activation rate of P-type impurities, and high activation annealing temperature.

Although the trench MOS device structure can well avoid the shortcomings of the junction barrier Schottky diode structure and achieve a high breakdown voltage, the electric field concentration at the corner of the trench becomes the main factor limiting its structure to obtain ideal breakdown characteristics. factor

In addition, for the above two device structures, although the reverse characteristics are greatly improved compared with the traditional planar SBD, that is, higher breakdown voltage and lower leakage current, but due to the narrow current channel, when the device When it is in forward bias, it is easy to cause current crowding at the corner of the mesa, thereby increasing the forward conduction resistance of the device and reducing the forward current density of the device to a large extent, which in turn causes the degradation of the forward characteristics of the device

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