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Schottky semiconductor device and method for preparing same

A semiconductor and Schottky potential technology, applied in the field of Schottky semiconductor devices, can solve the problems of fast turn-on and turn-off, affecting the reverse breakdown characteristics of the device, and low forward turn-on voltage, so as to improve the impurity doping concentration. , The effect of improving forward conduction characteristics and reducing forward conduction resistance

Active Publication Date: 2013-10-30
北海惠科半导体科技有限公司
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Problems solved by technology

[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have the disadvantages of large reverse leakage current and cannot be used in high-voltage environments.
[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device, while the traditional The planar Schottky diode has a high on-resistance

Method used

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  • Schottky semiconductor device and method for preparing same

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Embodiment 1

[0020] figure 1 It is a cross-sectional view of a Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0021] A Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky barrier junction 5, located on the surface o...

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Abstract

The invention discloses a schottky semiconductor device which is provided with a charge compensation structure. When the semiconductor device is connected to a certain reverse bias voltage, first electric conduction semiconductor material and second electric conduction semiconductor material can form charge compensation, and the characteristic of forward conduction or reverse blocking of the device is improved. The invention further provides a method for preparing the schottky semiconductor device.

Description

technical field [0001] The invention relates to a Schottky semiconductor device, and also relates to a preparation method of the Schottky semiconductor device. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution curve in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/36H01L21/329
Inventor 朱江
Owner 北海惠科半导体科技有限公司
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