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Charge compensation Schottky semiconductor device and manufacturing method thereof

A charge compensation, conductive semiconductor technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve problems such as fast turn-on and turn-off, large reverse leakage current, and high on-resistance

Inactive Publication Date: 2013-10-30
朱江
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have the disadvantages of large reverse leakage current and cannot be used in high-voltage environments.
[0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device, while the traditional The planar Schottky diode has a high on-resistance

Method used

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  • Charge compensation Schottky semiconductor device and manufacturing method thereof
  • Charge compensation Schottky semiconductor device and manufacturing method thereof

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Embodiment 1

[0023] figure 1 It is a sectional view of a charge compensation Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0024] A charge compensation Schottky semiconductor device, comprising: a substrate layer 1, which is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located in the lower part of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky b...

Embodiment 2

[0033] figure 2 It is a sectional view of a charge compensation Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0034] A charge compensation Schottky semiconductor device, comprising: a substrate layer 1, which is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located in the lower part of the trench, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky...

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Abstract

The invention discloses a charge compensation Schottky semiconductor device. When a certain reverse bias voltage is connected to the semiconductor device, first electric conduction semiconductor material and second electric conduction semiconductor material can form charge compensation and improve reverse breakdown voltage of the device or improve the forward direction communication characteristic of the device. The invention further provides a manufacturing method of the super junction Schottky semiconductor device.

Description

technical field [0001] The invention relates to a charge compensation Schottky semiconductor device, and also relates to a manufacturing method of the charge compensation Schottky semiconductor device. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be manufactured through a variety of different layout techniques, the most commonly used is planar layout, the traditional planar Schottky diode has a sudden...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/872H01L21/329
Inventor 朱江
Owner 朱江
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