1results about How to "Reduce surface electric field" patented technology

The application relates to a high-voltage BJT device applying a SiC BCD process and a preparation method thereof, and the high-voltage BJT device comprises a drift region, a collector region extending from the surface of the drift region to the inside of the drift region, a collector electrode located on the collector region, a current guide layer located on the drift region and spaced apart from the collector region, a JTE-GR terminal junction extending from the surface of the drift region to the inside of the drift region and located between the collector region and the current guide layer, a base region located on the current guide layer, a base region ohmic contact region extending from the surface of the base region to the inside of the base region, a base electrode located on the base region ohmic contact region, an emitter region located on the base region and spaced apart from the base region ohmic contact region, an emitter electrode located on the emitter region, and the base electrode is located between the emitter electrode and the collector electrode. The embodiment of the application combines the advantages of the JTE terminal and the GR terminal, so that the terminal junction can bear higher blocking voltage, and the sensitivity of the terminal junction to the concentration is reduced.