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112results about How to "Improve the effective use of area" patented technology

Ordered gas diffusion electrode, and production method and application thereof

The invention relates to a novel porous skeleton structure membrane electrode, and a production method and an application thereof. The membrane electrode is composed of a gas diffusion layer and a catalysis layer, the gas diffusion layer is made through supporting Vulcan XC-72 carbon powder, acetylene black carbon powder, carbon nanotube or graphene mixed PTFE or Nafion to a support layer, and the catalysis layer is a porous skeleton structure catalysis layer, and is composed of Nafion polyions formed on the surface of the gas diffusion layer, a carbon material and a porous skeleton structure formed supported nanometer platinum particles. The ordered membrane electrode has the advantages of high utilization rate of the precious metal Pt, high stability, low mass transfer resistance, effective reduction of the cost of a fuel cell catalyst, improvement of the performances of a fuel cell, and prolongation of the life of the fuel cell; The membrane electrode effectively enhances the mass transfer of a fuel in the catalysis layer in order to improve the fuel utilization rate; and the ordered gas diffusion electrode can be used in proton exchange membrane fuel cells, direct liquid fuel cells and proton exchange membrane water electrolysis cells as a membrane electrode.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI

Well lid overturning opening and closing mechanism based on four-bar linkage hinge and hydraulic driving system thereof

The invention discloses a well lid overturning opening and closing mechanism based on a four-bar linkage hinge and a hydraulic driving system thereof. The cylinder body end of a main hydraulic cylinder and a supporting seat are hinged into a wellbore; the cylinder rod end of the main hydraulic cylinder, a second connecting piece and an adjustable damping cylinder are hinged to the same shaft; thesecond connecting piece is hinged to the tail edge of a well lid; and the adjustable damping cylinder is hinged to the middle of the well lid through an overturning spindle. The cylinder body end of an auxiliary hydraulic cylinder and the supporting seat are hinged into the wellbore; the cylinder rod end of the auxiliary hydraulic cylinder is upward and is hinged to a pushing-up rod; the middle ofthe pushing-up rod is hinged into the wellbore; the pushing-up rod is hinged to the middle of the overturning rod which is hinged to the tail edge of the well lid; and the overturning rod is hinged to a first connecting piece which is hinged to a fixing shaft in the wellbore. Hydraulic driving is adopted, through movement mechanism linkage, the large-weight well lid is quickly opened and closed at any opening angle, the mechanism structure is tight, the occupied space is small, the effective utilization area of a wellbore channel is increased, the mechanism safety is improved, and the well lid overturning opening and closing mechanism is suitable for different weights and overturning angles.
Owner:ZHEJIANG UNIV

Method of manufacturing bonding structure for multi-layer bonding stack and bonding structure

The invention relates, in particular, to a method of manufacturing a bonding structure for a multi-layer bonding stack and a bonding structure. The method includes the steps of depositing front bonding points at preset positions on a surface of a dielectric layer of a wafer, the wafer including a first substrate and the dielectric layer, and the dielectric layer including a plurality of metal connection points; leading out a part of the metal connection points to form metal transfer points; performing through-hole etching at the metal transfer points to form a plurality of through-holes; performing conductive metal deposition on the inside of the through-holes to fill the through-holes; and subjecting a far surface of the substrate away from the dielectric layer to thinning and chemical mechanical planarization processing until the conductive metal is exposed, and forming, by taking the conductive metal as backside bonding points, the bonding structure for the multi-layer bonding stack and with bonding points on both the front and back sides. The bonding stack of a plurality of wafers or chips can be realized by the method of the invention, the freedom of the circuit design of an integrated circuit chip and the effective utilization area of the chip can be effectively improved, and the problems such as high resistance caused by too long connection wires and bandwidth decrease are reduced.
Owner:WUHAN XINXIN SEMICON MFG CO LTD

Waterproof, air-permeable, skidproof and cushioning combined shoe sole with multilayered structure

The invention relates to a waterproof, air-permeable, skidproof and cushioning combined shoe sole with multilayered structure, which is used for casual shoes, travel shoes, sports shoes, leather shoes and the like. The shoe sole consists of an outsole, a waterproof and air-permeable component and an air-permeable midsole arranged from bottom up. The outsole is provided with air-permeable sections at least at the position corresponding to the sole and / or heel of people; several bending segments protruding towards the top surface of the outsole are formed at the air-permeable sections of the outsole and are parallel with each other at interval; every two bending segments are connected by means of a plane part; the bending segments divides the outsole into a lower air storage space in communication with the lower surface of the outsole, and an upper air storage space in communication with the waterproof and air-permeable component; and the bending segment is provided with air-permeable holes capable of communicating the lower air storage space with the upper air storage space. The air-permeable holes are parallel to the surface of the outsole so that the shoe sole is skidproof and cushioning and effectively prevents foreign matters from piercing the waterproof and air-permeable component.
Owner:YEARCON

Rapid expanding growth method of silicon carbide single crystal

The invention discloses a rapid expanding growth method of a silicon carbide single crystal, belonging to the technical field of semiconductor crystal growth. The invention aims to solve the problem that rapid expanding of silicon carbide single crystals cannot be better realized on the premise of ensuring crystallization quality in the prior art. According to the method, a silicon carbide singlecrystal material with a certain thickness is used as a seed crystal, the circumferential surface of the silicon carbide single crystal is polished through a curved-surface chemical mechanical polishing technology so as to realize lateral expanding growth, and a growth component flow guide plate is arranged in a crystal growth cavity and silicon carbide powder and used for controlling the silicon carbide single crystal to preferentially perform expanding growth and then perform axial growth; and a metal or alloy compound material with high temperature resistance, corrosion resistance and a lowradiation coefficient is adopted to for coating treatment of a surface layer and an internal structure material of the growth cavity, so nucleation growth of silicon carbide on the surface of the growth cavity can be inhibited, the formation of polycrystals is effectively suppressed, and the situation that the silicon carbide single crystal encounters generated parasitic polycrystals in the expanding process and stops expanding is effectively prevented.
Owner:河北同光科技发展有限公司

Laser radar device-based vehicle appearance measuring method, apparatus and device

The invention discloses a laser radar device-based vehicle appearance measuring method, a laser radar device-based vehicle appearance measuring apparatus and a device. The method includes the following steps that: a laser radar device comprises a first bracket, a first laser radar, a second bracket and a second laser radar, wherein the first laser radar, based on a preset scanning radius inside aparking lot, automatically scans the information such as the width and length of a vehicle when the vehicle enters a scanning area corresponding to the scanning radius, so as to measure the width, length and other information of the vehicle, and the second laser radar automatically measures the information such as the wheel diameter and wheelbase of the vehicle when the vehicle enters the scanningarea corresponding to the scanning radius, so as to measure the wheel diameter, the wheelbase and other information of the vehicle. With the laser radar device-based vehicle appearance measuring method, the laser radar device-based vehicle appearance measuring apparatus and the device of the invention adopted, the measurement of the appearance of the vehicle can be realized by the two laser radars; a small area is just occupied, so that the effective utilization area of the parking lot is improved; and procurement costs and maintenance costs are low.
Owner:恩际艾科技(苏州)有限公司

Terminal structure of metal oxide semiconductor field effect transistor and manufacturing method of terminal structure of metal oxide semiconductor field effect transistor

The invention relates to a terminal structure of a metal oxide semiconductor field effect transistor (MOSFET). The terminal structure comprises an N-type cut-off ring and further comprises a first P-type low-doped region and a second P-type low-doped region, wherein the first P-type low-doped region and the second P-type low-doped region are formed between the cut-off ring and an active region through ion implantation, the implantation dose ranges from 1.5*10<11>/cm<2> to 2*10<13>/cm<2>, implantation energy ranges from 20 kilo electron volts to 80 kilo electron volts, the first P-type low-doped region is closer to the active region than the second P-type low-doped region, and the length of the first P-type low-doped region is smaller than that of the second P-type low-doped region. The invention further relates to a manufacturing method of the terminal structure of the MOSFET. The two P-type low-doped regions are adopted for reducing a surface electric field and increasing the breakdown voltage of the MOSFET, the terminal structure replaces a traditional terminal structure with a plurality of voltage dividing rings, the terminal size is greatly reduced, the effective use area of a chip is increased, and parameters of the chip are more excellent under the same area.
Owner:深圳深爱半导体股份有限公司

Circuit protection device and its manufacturing method

The invention discloses a circuit protection device, which includes: a positive temperature coefficient heat-sensitive material layer, which consists of a first face and an opposite second face, as well as a first end face and an opposite second end face, with the first face comprising a first area adjacent to the first end face and a second area adjacent to the first area, and the second face comprising a third area adjacent to the second end face and a fourth area adjacent to the third area; a first electrode layer, which covers the first area; a second electrode layer, which covers the third area; a first terminal electrode, which is located on the first end face and is connected to the first electrode layer; a second terminal electrode, which is positioned on the second end face and is connected to the second electrode layer; a first insulation layer, which covers at least a part of the second area and at least a part of the first electrode layer so as to isolate the first electrode layer and the second terminal electrode; and a second insulation layer, which covers at least a part of the fourth area and at least a part of the second electrode layer so as to isolate the second electrode layer and the first terminal electrode.
Owner:RAYCHEM ELECTRONICS (SHANGHAI ) LTD

Enhancing system for cruising power of solar hybrid electric vehicle

The invention discloses an enhancing system for cruising power of a solar hybrid electric vehicle. The enhancing system comprises a pressure regulator, a charging controller, a damper generating device, a high-power generator and front, ceiling and rear solar panels, wherein one end of the pressure regulator is connected with the charging controller while the other end is respectively connected with the damper generating device, the high-power generator and the front, ceiling and rear solar panels. The enhancing system disclosed by the invention is smart and reasonable in design; the solar energy can be utilized to continuously supply electric power to the hybrid electric vehicle, so that an accumulator can be continuously charged in a driving or parking process; and the damper generating device is used for converting the upper and lower vibration mechanical energy generated in the driving process of the hybrid electric vehicle into electric power, and the high-power generator is utilized to supplement electric energy by utilizing the residual electric power, so that the reasonable utilization of the energy is realized, the purpose of increasing the electrical driven cruising power is achieved, the energy utilization ratio is effectively promoted, the environment is protected, the energy is saved, and thus the enhancing system can be widely popularized and applied.
Owner:哈尔滨阿曼奇新能源技术开发股份有限公司

Semiconductor transistor preparation method and structure

The invention discloses a semiconductor transistor preparation method and structure. The structure comprises a semiconductor substrate; a gate structure arranged on the upper surface of the semiconductor substrate and comprising a gate conductive layer and a gate insulation layer arranged on the gate conductive layer; gate insulation side walls arranged at the side walls of the gate structure; bolt conductive structures arranged at the two sides of the gate structure, wherein the bolt conductive structures are electrically isolated through an air insulation structure or an insulation layer; and air side walls arranged between bolt conductive layers and the gate insulation side walls. Each air side wall comprises an air gap and an insulated seal layer, wherein the air gap is sealed by the insulated seal layer. Compared with the prior art, through introduction of the air gaps and air gap chambers, not only parasitic capacitance between grid electrodes and the bolt conductive structures is reduced, but also parasitic capacitance between the bolt conductive structure and the bolt conductive structure is reduced, thereby improving stability and reliability of a transistor, and providingan effective means for further reducing the size of the transistor.
Owner:CHANGXIN MEMORY TECH INC
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