30results about How to "Increase effective capacitance" patented technology

A dynamic memory circuit in which the inherent bipolar transistor effect within a floating body transistor is utilized to store an information bit. A floating body of a storage transistor stores an information bit in the form of an electric charge. The floating body is charged and discharged via an access transistor during data write operations. The inherent bipolar transistor resident within the floating body transistor increases the effective capacitance of the floating body which acts as the storage node, and thereby enhances the magnitude of the discharge current which represents the stored information bit during read operations.

Discussed is a touch screen panel including: a substrate; a first line electrode in a mesh pattern on the substrate; a plurality of first segment electrodes disposed on the first line electrode; a second line electrode in a mesh pattern on the substrate, and disconnected in an intersection area where the second line electrode is to intersect the first line electrode; a plurality of second segment electrodes disposed on the second line electrode; and a plurality of connection electrodes that connect the disconnected second line electrode in the intersection area, wherein the first and second line electrodes reduce resistance, and the first and second segment electrodes increase effective capacitance for sensing a touch to thereby reduce an RC-delay in the touch screen panel.

A thin film balun that can be made smaller and thinner while maintaining required balun characteristics is provided. A thin film balun 1 includes: an unbalanced transmission line UL including a first coil portion C1 and a second coil portion C2; a balanced transmission line BL including a third coil portion C3 and a fourth coil portion C4 that are positioned facing and magnetically coupled to the first coil portion C1 and the second coil portion C2 respectively; an unbalanced terminal UT connected to the first coil portion C1; a ground terminal G connected to the second coil portion C2 via a C component D; and an electrode D2 connected to the ground terminal G and facing a part of the second coil portion C2. The C component D is formed by the electrode D2 and the part D1 of the second coil portion C2.

A pixel structure includes a pixel unit layer and a first metal wire layer. Each of control signal line and first and second scan signal lines in the first metal wire layer is connected to each pixel unit in a corresponding row. An insulating layer is disposed between each first metal patterned section in the first metal wire layer and a corresponding row of pixel units. A second metal wire layer includes initial signal lines and second metal patterned sections. Each initial signal line is connected to each pixel unit in a corresponding row. Each second metal patterned section overlaps with one of the first metal patterned sections to form a capacitor. Each connection signal line in a third metal wire layer connects the first scan signal line of a current row of pixel units to the second scan signal line of a next row of pixel units.

The invention provides a MEMS microphone. The MEMS microphone comprises a substrate with a vocal cavity, back polar plates fixed on the substrate and vibration films which are arranged oppositely to the back polar plate alternately to form capacitive structures, wherein the back polar plate comprises a back plate and a fixed electrode; the vibration film comprises an effective vibration part and an invalid vibration part; the effective vibration part comprises a vibration body arranged oppositely to the vocal cavity and a fixed arm that is extended by the vibration body and fixed on the substrate; the parts of the vibration body and the fixed arm which are opposite to the vocal cavity form an effective vibration area; the invalid vibration part is located between two adjacent fixed arms and is arranged at intervals with the effective vibration part; the invalid vibration part is at least partially fixed on the substrate; the fixed electrode is the same as the shape of the effective vibration area. Compared with the related technology, the MEMS microphone provided by the invention has better acoustic performance.

The present invention provides a thin film balun capable of preventing a resonant frequency from being increased to a high frequency, and thus realizing a preferable passage characteristic. A thin film balun 1 includes: an unbalanced transmission line 2 having a first coil portion C1 and a second coil portion C2; and a balanced transmission line 3 having a third coil portion C3 and a fourth coil portion C4 which are magnetically coupled with the first coil portion C1 and the second coil portion C2, respectively. The first coil portion C1 is connected to an unbalanced terminal T0, and the second coil portion C2 is connected to a ground terminal G (ground potential) via a capacitor D (C component). The third coil portion C3 is connected to a balanced terminal T1 and the fourth coil portion C4 is connected to a second balanced terminal T2. The capacitor D is provided, in a plan view, in an area S1 between the outer end of the unbalanced terminal T0 and the outer end of the ground terminal G.

A photoelectric conversion device (10) includes a first conductivity type first semiconductor region (10a) located in a pixel region (11), a second conductivity type second semiconductor region (12) provided in the first semiconductor region (10a), for storing a signal charge, interconnecting portions (13 and 14) for connecting the second semiconductor region (12) with a circuit element provided outside the pixel region (11), and an organic film (16) which is provided above a portion located in the pixel region (11) in the interconnecting portions (13 and 14) through an insulating protective film (15) and held at a predetermined potential. The organic film (16) is made of a thermoplastic polyimide resin containing one of a conductive particle and a conductive fiber.

The invention discloses a plasma display panel and a front substrate thereof. The front substrate comprises a plurality of pairs of maintaining electrodes distributed on the lower surface of the front substrate, front medium layers covered on the maintaining electrodes and the lower surface of the front substrate, and protective layers covered on the lower surfaces of the front medium layers; each pair of the plurality of pairs of maintaining electrodes comprise public electrodes and scanning electrodes, the public electrode and the scanning electrodes all comprise bus electrodes and transparent electrodes, wherein each transparent electrode comprises a discharge transparent electrode, an extending transparent electrode which extends from the top of one of a plurality of first retaining walls on a rear substrate of the plasma display panel and is connected with each bus electrode, and a connecting transparent electrode connected with the discharge transparent electrode and the extending transparent electrode; and the bus electrodes are arranged on one of a plurality of second retaining walls on the rear substrate of the plasma display panel and a place corresponding to one of the second retaining walls.

The invention provides a quantum dot array capacitor and a preparation method thereof. The capacitor comprises a semiconductor substrate, a first conductive layer located on the semiconductor substrate, a first dielectric layer located on the first conductive layer, a second conductive layer located on the first dielectric layer and a second dielectric layer located on the second conductive layer.Conductive layers and dielectric layers are and alternately formed to obtain a multi-layer capacitor structure. The capacitor is formed into a multi-layer pyramid-shaped array. Due to the fact that the pyramid array structure is adopted in the array capacitor, larger capacitance is generated on the same wafer area; and the conductive layers and the dielectric layers can be repeatedly formed, so that the capacitance density per unit area can be further improved.