19results about "Impedence convertors" patented technology

A high peak bandwidth I / O channel embedded within a multilayer surface interface that forms the bus circuitry electrically interfacing the output or input port on a first semiconductor die with the input or output port on a second semiconductor die.

The utility model provides an integrating circuit for an ACDC driving power supply, the ACDC driving power supply, a chip and electronic equipment. The integrating circuit comprises a variable impedance sub-circuit and a first capacitor; a first end of the variable impedance sub-circuit is coupled with an output end of a transconductance amplifier of the ACDC driving power supply, a common connection point of a second end of the variable impedance sub-circuit and a first end of the first capacitor is used for outputting an integral signal of the ACDC driving power supply, the integral signal participates in a control loop of the ACDC driving power supply, and a second end of the first capacitor is connected with a reference ground; and the variable impedance sub-circuit is used for adjusting the bandwidth of the control loop according to the received control signal. According to the utility model, not only can high PF low loop bandwidth be well realized, but also the advantages of simple structure, few components and low cost are realized.

Hybrid computer module element X-(Cross)-point memory.

The invention belongs to the field of broadband power amplifiers, and particularly relates to a broadband impedance converter. The circuit comprises an input impedance converter, an input matching unit, a driving power amplifier, an inter-stage matching unit, a final-stage power amplifier and an output impedance converter. According to the invention, based on the HBT technology, coupling among multiple layers of metal is utilized, so that an ultra-wideband impedance converter is realized; the broadband impedance transformer can provide a required load line for the power amplifier in a very wide frequency band range; the broadband impedance converter can simplify the input matching of the ultra-wideband power amplifier and reduce the design complexity. Based on the impedance transformer and the ultra-wideband power amplifier structure, the designed wideband amplifier is high in bandwidth, high in efficiency, simple in design and small in area.

Server farm power management system.

The invention relates to a sampling circuit, an electronic device and a multi-reference ground system. The sampling circuit comprises a reference voltage source, a sampling module, an impedance conversion module and a signal processing module, the reference voltage source converts a power supply signal and provides a reference voltage for the sampling module; the sampling module performs conversion and primary adjustment on the acquired micro current signal based on the reference voltage and then outputs a first sampling signal and a second sampling signal respectively; the impedance conversion module performs impedance conversion on the first sampling signal and the second sampling signal and then outputs a corresponding first output signal and a corresponding second output signal respectively; the signal processing module extracts and amplifies the first output signal and the second output signal to obtain a forward sampling signal. On the premise of ensuring high precision and high signal-to-noise ratio, reliable and flexible weak signal acquisition can be realized, and the weak signal acquisition device is suitable for complex application scenes such as multi-reference ground system sampling and negative voltage sampling, and is simple in structure, low in cost, strong in interference resistance and accurate in measurement.

The utility model discloses a low-temperature filtering module and a quantum computer using the same. The low-temperature filtering module comprises a grounded shell, the filter main body is integrated in the shell, and the filter main body comprises a plurality of coaxially arranged metal cylinders to form an impedance conversion structure; the infrared wave-absorbing structure is integrated in the housing, and the infrared wave-absorbing structure wraps the filter main body. According to the utility model, the low-pass filter and the infrared wave-absorbing structure are integrally designed through a coaxial discontinuous metal cylinder structure, and impedance conversion filtering and infrared quasi-particle absorption functions are realized in parallel in an integrated module, so that the high-frequency filtering performance of an original separation device is maintained, the number of devices is reduced through function integration, and the cost is reduced. The material cost and the occupied space of the mK temperature zone are remarkably reduced, the cooling capacity pressure of a refrigerator is relieved, meanwhile, the loss of a cascade connector is eliminated, the consistency of devices is improved, and a key solution is provided for space expansion and reliability optimization of a high-density superconducting bit system.

Data transfer rates input to and output from electronic devices are a function of I / O pad circuit structure. The load capacitance of an I / O pad may reduce the bandwidth of an I / O circuit. A reduced pad capacitance circuit may be used to reduce or eliminate the positive and physical pad capacitance associated with a capacitive pad. This negative capacitance reduces or minimizes poor signal quality arising from large pad capacitance. This improved signal may be fed into a comparator, where the signal may be improved further using an equalizer. The use of negative capacitance circuit will increase the transmit and receive signaling quality of I / O interfaces.

An integrated circuit may include one or more circuits coupled to capacitance multiplier circuitry. The capacitance multiplier circuitry may include a capacitor, fixed and tunable resistances, and a transconductance circuit. The tunable resistance can be adjusted to control the overall capacitance of the capacitance multiplier circuitry. The transconductance circuit may include a transistor having a drain terminal coupled to a first electrical component and a source terminal coupled to a second electrical component. The first electrical component may be a diode-connected transistor, a direct shorting wire, a resistor, an inductor, or a current source. The second electrical component may be a current source, a direct shorting wire, a resistor, an inductor, or another diode-connected device. Configured in this way, the capacitance multiplier circuitry can provide a large adjustable amount of capacitance without a voltage drop and without consuming a large amount of power.

Impedance matching network (104, 204, 400, 500), comprising: a first signal terminal (212, 302, 402, 502) configured to receive a signal from a source circuit (102, 202); a second signal terminal (214, 304, 404, 504) configured to provide the signal to a load circuit (106, 206); a series branch comprising a variable capacitive component (208, 300, 350, 401, 501) between the first signal terminal (212, 302, 402, 502) and the second signal terminal (214, 304, 404, 504), wherein the variable capacitive component (208, 300, 350, 401, 501) comprises a plurality of series-connected capacitive sections (306, 308, 310, 312, 314, 406, 408, 410, 412, 414, 506, 508), wherein at least one of the capacitive sections comprises a switching element (316, 318, 320, 416, 418, 420, 516, 518, 520) comprising a stack of series-connected transistors (352a...352N), and a control component (210, 426, 526) configured to control a capacitance of the variable capacitive component (208, 300, 350, 401, 501) by controlling at least one of the capacitive sections (306, 308, 310, 312, 314, 406, 408, 410, 412, 414, 506, 508) based on a predetermined algorithm, wherein the at least one of the capacitive sections (306, 308, 310, 312, 314, 406, 408, 410, 412, 414, 506, 508) comprising the switching element (316, 318, 320, 416, 418, 420, 516, 518, 520) comprises a first capacitive section comprising a first switching element comprising a stack of series-connected transistors, and a second capacitive section comprising a second switching element comprising a stack of series-connected transistors, wherein the control component (210, 426, 526) is configured to switch the capacitive sections (306, 308, 310, 312, 314, 406, 408, 410, 412, 414, 506, 508) comprising the switching elements (316, 318, 320, 416, 418, 420, 516, 518, 520) on or off in series in steps of one in a predetermined direction according to the predetermined algorithm in order to avoid voltage overload.

The application relates to a design method of a wideband asymmetric quasi-balanced DPA with an enlarged backoff range, which comprises the following steps: establishing the architecture of the wideband asymmetric quasi-balanced DPA, establishing the equivalent circuit model of the wideband asymmetric quasi-balanced DPA, and obtaining the mathematical relationship between voltage and current; adopting a linear current model as an excitation signal to determine the load impedance, output power and drain efficiency under different normalized input levels; setting the load impedance of the main power amplifier and the auxiliary power amplifier to be equal when the output power is saturated, and obtaining the adjustable proportional coefficient of the loaded load; setting the voltage of the main power amplifier to be equal after the voltage saturation, and obtaining the relationship between the current ratio of the auxiliary power amplifier and the normalized input starting level; obtaining the relationship between the output power backoff ratio and the normalized input starting level; and optimizing the isolation port load of the output coupler and the direct current bias combination of the main power amplifier and the auxiliary power amplifier in the target working frequency band to meet the efficiency requirement under the set output power backoff ratio.

A voltage differential current feed transconductance amplifier system (VDCCTA), consisting of: a voltage differential current booster module (VDCC); an operational transconductance amplifier (OTA) module, combined with the VDCC module on a Z-connector; and a variety of connections, including: two input connections; five output connections; and two buffered connections, wherein the two input connections are configured to receive differential input voltages, one output connection is configured to provide current output, two output connections are configured to provide current images of the connection providing current output, and two further output connections are configured to provide transconductance outputs; the system is configured to be tunable by pre-flows; and the system is further configured to operate as an active inductor simulator when connected to a grounded capacitor.

Provided is a high-frequency circuit capable of reducing the passing loss of a high-frequency signal in a matching circuit (including a harmonic attenuation circuit) connected to the output end of a power amplifier circuit. A high-frequency circuit (1) is provided with: a power amplifier circuit (10); a harmonic attenuation circuit (30) having an attenuation band including at least a part of the harmonic band of the transmission band of the band A; a matching circuit (20) connected between the harmonic attenuation circuit (30) and the power amplification circuit (10); a filter (51) having a passband including a transmission band of a frequency band A; a switch (41) connected between the harmonic attenuation circuit (30) and the filter (51); a switch (61) connected between the filter (51) and the antenna connection terminal (100); and a switch (63) connected between the matching circuit (20) and the antenna connection terminal (100) without passing through the harmonic attenuation circuit (30).

There is provided a plasma processing apparatus for performing plasma processing on a substrate, comprising: a processing container accommodating the substrate; an electrode to which a high-frequency power for generating plasma in the processing container is applied; a high-frequency power supply configured to apply the high-frequency power to the electrode; and a high-frequency power supply circuit configured to supply the high-frequency power from the high-frequency power supply to the electrode. The high-frequency power supply circuit comprises: a power supply path configured to supply a power from the high-frequency power supply to the electrode; and a matching device configured to match a high-frequency power supply-side impedance with a plasma-side impedance, the matching device comprising a negative impedance portion that is connected to the power supply path and realizes a negative impedance corresponding to a plasma-side impedance.

A comb spectrum generator comprises a nonlinear transmission line circuit connected between a signal input end and a signal output end, and further comprises an input series matching circuit, the input end of the input series matching circuit is connected to the signal input end, and the output end of the input series matching circuit is connected to the nonlinear transmission line circuit, the input series matching circuit includes at least one first inductor and at least one first capacitor connected in series with the first inductor. According to the comb spectrum generator, the input series matching circuit is arranged at the front end of the nonlinear transmission line circuit, so that echo reflection generated in the comb spectrum generator after a high-power signal is input in a target input frequency range can be reduced; a high-power input signal can enter the nonlinear transmission line circuit without loss as far as possible, so that the high-power input signal is effectively converted into higher harmonic output, and the power conversion rate of the high-power input signal is improved.

Design and construction of high interconnection density, minimal loss I / O channels comprising embedded passive networks that preserve signal integrity at signaling frequencies above 1 GHz, preferably above 10 GHz, to improve memory-processor bandwidths.

The present disclosure relates to a 5th generation (5G) or pre-5G communication system for supporting a higher data transmission rate than a 4th generation (4G) communication system such as Long-Term Evolution (LTE). The present disclosure provides a device for variable signal attenuation equipped in a stack-up structure inside an RFIC. The device for signal attenuation comprises: a first transmission line positioned on a first layer inside the RFIC; a second transmission line positioned on a second layer, which is adjacent to the first layer, and electromagnetically coupled to the first transmission line; and a control unit. The first transmission line comprises an impedance control unit on one side. The control unit can variably control the impedance control unit.

The invention provides an electronic circuit for powering a coil or a set of coils of an electromagnetic motor. The electronic circuit comprises a normal operation circuit, which is used during a normal operation mode, a braking circuit, which is used during an emergency mode, and a switching device for switching between the normal operation mode and the emergency mode. In the normal operation mode, the electronic circuit is configured to supply power to the coil or the set of coils. In the emergency mode, the electronic circuit is configured to short-circuit the coil or the set of coils in a way across the braking circuit. The braking circuit is arranged to generate a negative resistance or negative impedance to increase the braking force.

The invention relates to a design method of a broadband asymmetric quasi-balanced DPA for expanding a rollback range. The design method comprises the following steps: establishing a framework of the broadband asymmetric quasi-balanced DPA, establishing an equivalent circuit model of the broadband asymmetric quasi-balanced DPA, and obtaining a mathematical relationship between voltage and current; a linear current model is adopted as an excitation signal, and load impedance, output power and drain efficiency under different normalized input levels are determined; setting the load impedance of the main power amplifier and the auxiliary power amplifier to be equal when the output power is saturated, and obtaining an adjustable proportionality coefficient of a loaded load; setting the voltage of the main power amplifier to be equal after being saturated, and obtaining a relation between a current ratio of the auxiliary power amplifier and the main power amplifier and a normalized input turn-on level; obtaining the relation between the output power back-off ratio and the normalized input turn-on level; and optimizing the isolation port load of the output coupler and the direct current bias combination of the main power amplifier and the auxiliary power amplifier at the target working frequency band so as to meet the efficiency requirement under the set output power rollback ratio.