3 results about "Impedance inverter" patented technology

The present disclosure relates to a diplexer with an impedance inverter. The diplexer can be used to isolate a transmitter and a receiver that share a common antenna. The diplexer is balanced by using an impedance gradient that provides an impedance that causes a balun of the diplexer to cut off access to the common antenna rather than replicate the antenna impedance. Such a cut off can have lower insertion loss than a diplexer that replicates the antenna impedance only to separate differential signals and common mode signals of the receiver and transmitter.

Technologies are disclosed that implement impedance inversion using a combination of transmission lines and lump elements to provide a targeted transformation or inversion. These impedance inverters or transformers use a hybrid approach, combining transmission lines with lump elements, where the transmission lines provide a first fraction of a targeted overall phase shift and the lump elements provide a second fraction of the targeted overall phase shift so that the combination of the elements provides the targeted overall phase shift. The first fraction can be less than 50% and the second fraction can be greater than 50% so that the phase shift is not evenly divided between the components of the hybrid impedance inverters.

A multi-path amplifier (e.g., a Doherty amplifier) includes a first transistor (e.g., a main amplifier FET), a second transistor (e.g., a peak amplifier FET), a combining node, and a shunt inductive circuit. The first and second amplifiers and the combining node structure are formed integral with a semiconductor die, and the shunt inductive circuit is integrated with the die. Outputs of the first and second transistors are electrically coupled to the combining node structure. The shunt inductive circuit is electrically coupled between the combining node structure and a ground reference node. The shunt inductive circuit includes a shunt inductance (e.g., including one or more wire bonds and / or one or more spiral inductors) integrated with the semiconductor die. The multi-path amplifier can also include an integrated phase shifter / impedance inverter coupled between the outputs of the first and second transistors, and the integrated phase shifter / impedance inverter is configured to apply a 90 degree phase delay between intrinsic drains of the first and second transistors.