6results about How to "Extended current path" patented technology

An ultra-wideband end-fire antenna with a common aperture embedded in a metal carrier includes a metal cavity with a coaxial cable compartment on one side. A radiator module is connected to the bottom of the metal cavity via a radiator fixing slot. The radiator module includes a common aperture antenna substrate. A low-frequency radiator is printed on the side of the common aperture antenna substrate closer to the coaxial cable compartment, and a high-frequency radiator is printed on the side farther from the coaxial cable compartment. This invention utilizes a dual-band antenna in a common aperture design to enhance the channel capacity and anti-fading capability of the communication system. At the same time, by achieving the antenna's carrier conformal characteristics, high isolation, and miniaturization, it enriches the antenna's application scenarios and improves the overall performance of the communication system.

The invention is applicable to the technical field of wireless communication, and provides a slotted cross dipole antenna loaded with an artificial magnetic conductor structure, which comprises three layers of dielectric substrates, namely a first layer of dielectric substrate, a second layer of dielectric substrate and a third layer of dielectric substrate; the two pairs of crossed dipoles are printed on the top and the bottom of the first dielectric substrate in pairs, the surfaces of the crossed dipoles are provided with slots, and each pair of crossed dipoles is connected through a microstrip line segment; the metal columns penetrate through the three layers of dielectric substrates to feed the crossed dipoles; the artificial magnetic conductor structure is printed on the top of the second-layer dielectric substrate; the low-profile broadband high-isolation dual-linear polarization microstrip antenna realizes the characteristics of low profile, broadband, high isolation and dual-linear polarization, and is suitable for the field of Internet of Things and wireless communication.

The embodiment of the invention provides an electro-optical modulator, a photon chip and a light quantum computer. The electro-optical modulator comprises a grounding electrode assembly and a signal electrode assembly. The ground electrode assembly includes a first ground electrode and a second ground electrode. The signal electrode assembly is located between the first ground electrode and the second ground electrode. The signal electrode assembly includes a positive signal electrode and a negative signal electrode. The signal electrode assembly is provided with the groove, equivalently, the current path of microwaves is prolonged, the distributed inductance of a transmission line is increased, the microwave speed is reduced, speed matching is more effectively achieved, the large distributed inductance is beneficial to increasing the characteristic impedance of the electrode, impedance matching is achieved, the reflection coefficient of radio-frequency signals is reduced, and the transmission efficiency of the radio-frequency signals is improved. Flat frequency response and higher effective driving voltage are obtained, and bandwidth and modulation efficiency are improved. The overall width of the signal electrode assembly does not change obviously, so that the transmission quality and stability of the system are ensured.

The application provides a silicon controlled rectifier, a manufacturing method of the silicon controlled rectifier, a chip and a circuit, and belongs to the field of semiconductor devices.The silicon controlled rectifier comprises a substrate, a first well region, a first injection region to a sixth injection region, a first polysilicon region and a second polysilicon region, a second well region and a third well region, a seventh injection region, an eighth injection region and an isolation structure.The first injection region to the sixth injection region are sequentially formed in the first well region along the length direction of the substrate.The second well region and the third well region are formed in the first well region along the width direction of the substrate and are located between the third injection region and the fourth injection region.The seventh injection region is formed in the second well region.The eighth injection region is formed in the third well region.The third injection region and the eighth injection region are connected to a first electrode.The fourth injection region and the seventh injection region are connected to a second electrode.The first injection region, the second injection region, the first polysilicon region, the second polysilicon region, the fifth injection region and the sixth injection region are connected.Through the silicon controlled rectifier provided by the application, the positive feedback effect of the SCR path can be weakened, and the holding voltage can be improved.

The invention relates to the technical field of antennas, in particular to a marginal inductive loading-based radio frequency identification miniaturized narrow-beam antenna, which comprises a top dielectric substrate and a bottom dielectric substrate, the lower surface of the bottom dielectric plate is provided with a reflection copper-clad grounding plate, and the upper surface is provided with a feed network. The upper surface of the top layer dielectric substrate is provided with a rhombus metal patch with two feeding points, and four corners of the rhombus metal patch are respectively located at the midpoint positions of four edges of the top layer dielectric substrate; the four corners of the top layer dielectric substrate are respectively provided with a triangular parasitic patch, and each triangular parasitic patch is connected with the reflection copper-clad grounding plate on the lower surface of the bottom layer dielectric substrate through a short circuit screw. The top layer dielectric substrate and the bottom layer dielectric substrate are kept at an interval of a specific height through the short circuit screws, so that an air layer is formed; and two feed points of the rhombic metal patch are respectively connected with a feed network on the upper surface of the bottom dielectric substrate through a metal probe which vertically penetrates through the air layer.

A radiation patch comprises four rectangular patches which are laid on the top surface of a thin film material plate, a gap is reserved between every two adjacent rectangular patches, and a polygonal groove is formed in the center of each rectangular patch. And the aramid paper honeycomb is used for supporting the thin film material plate and is positioned between the thin film material plate and the feeder dielectric plate. The slotted floor is located on the top surface of the feeder dielectric plate, and the center of the slotted floor is provided with an H-shaped slot. The microstrip feeder is located on the bottom face of the feeder dielectric plate, and the impedance of the microstrip feeder is 50 ohms. The thin film material plate and the aramid paper honeycomb replace a traditional high-frequency microwave plate, so that the weight can be reduced by more than 50%, and the light weight of the antenna is realized. A cross-shaped gap and a polygonal groove are formed in the radiation patch to excite mold stripping and mold combination, a current path is prolonged, and the bandwidth of the antenna is expanded under the condition of low profile. A printing mode is adopted, the structure is simple, and machining and integration are easy.