28results about How to "Extended current path" patented technology

The invention provides a double-frequency common-caliber base station antenna array which comprises a high-frequency array fixed on a metal reflecting plate and a low-frequency antenna unit located in the middle of the high-frequency array. A low-frequency radiation unit in the low-frequency antenna unit is composed of two groups of mutually crossed low-frequency dipole arms, each low-frequency dipole arm is composed of two quadrilateral or hexagonal metal rings, and the positions of four notches formed in the metal rings are inwards connected with composite decoupling structures respectively; and the low-frequency radiation unit is arranged above the high-frequency array and partially coincides with the projection of the high-frequency array on the reflecting plate. The composite decoupling structure can induce high-frequency induction current on the low-frequency dipole arms to achieve reverse offset in a wide frequency band, interference of the low-frequency radiation unit on high-frequency electromagnetic waves is reduced, a good high-frequency directional diagram shape preserving effect is achieved, the low-frequency dipole arms are printed on the dielectric substrate, the structure is simple, and the antenna is convenient to manufacture. And meanwhile, the current path of the low-frequency radiation unit is prolonged by the composite decoupling structure, and miniaturization is realized.

The utility model relates to the technical field of antenna structures, and provides a dual-port omnidirectional antenna, which comprises a dielectric substrate; the first antenna main body unit and the second antenna main body unit are arranged on the same surface of the dielectric substrate, the frequency bands of the first antenna main body unit and the second antenna main body unit are different, and the first antenna main body unit and the second antenna main body unit are arranged at intervals along the diagonal line of the dielectric substrate; the first antenna main body unit comprises a main body part and a first extension branch, the first extension branch bends and extends from one end, close to the second antenna main body unit, of the main body part and is spaced from the main body part to form a resonant filtering structure, and the resonant filtering structure is used for generating a radiation zero point in a corresponding frequency band of the second antenna main body unit; the second antenna main body unit is provided with a bending slot, the bending slot is used for generating a radiation zero point in a corresponding frequency band of the first antenna main body unit, and the dual-port omnidirectional antenna is beneficial to miniaturization, good in isolation and excellent in radiation performance.

The present invention discloses a low-profile dual-polarized antenna and an electronic device. The low-profile dual-polarized antenna comprises a first and a second metal layer arranged relatively to each other and an insulating dielectric layer arranged between the first and the second metal layers; the first metal layer comprises a coupling unit and a plurality of parasitic plates arranged around the coupling unit, and there is no contact between the plurality of parasitic plates, and there is no contact between the parasitic plates and the coupling unit; a connecting structure and a feeding unit are also arranged in the insulating dielectric layer, and the second metal layer is electrically connected to the parasitic plates and their corresponding connecting structures to form an open ring-shaped resonance unit; the coupling unit can resonate with the resonance unit; and the feeding unit is used to feed the coupling unit. The low-profile dual-polarized antenna provided by the present invention enables the dual-polarized antenna to obtain a larger bandwidth on the basis of a low profile, innovatively uses the floor of the patch antenna as part of the radiator, lengthens the current path, and further reduces the cross-sectional size of the antenna, which is conducive to the miniaturization of electronic equipment.

An ultra-wideband end-fire antenna with a common aperture embedded in a metal carrier includes a metal cavity with a coaxial cable compartment on one side. A radiator module is connected to the bottom of the metal cavity via a radiator fixing slot. The radiator module includes a common aperture antenna substrate. A low-frequency radiator is printed on the side of the common aperture antenna substrate closer to the coaxial cable compartment, and a high-frequency radiator is printed on the side farther from the coaxial cable compartment. This invention utilizes a dual-band antenna in a common aperture design to enhance the channel capacity and anti-fading capability of the communication system. At the same time, by achieving the antenna's carrier conformal characteristics, high isolation, and miniaturization, it enriches the antenna's application scenarios and improves the overall performance of the communication system.

The low-profile dual-polarization indoor distributed antenna of the present invention comprises a first horizontal polarization unit, a second horizontal polarization unit and a vertical polarization unit. The metal ground of the first horizontal polarization unit is engraved with four rectangular grooves, and the upper surface of the dielectric substrate is provided with eight arc-shaped directors; the metal ground of the second horizontal polarization unit is engraved with eight arc-shaped grooves and rectangular grooves; the vertical polarization unit comprises four orthogonally arranged wavy radiation arms, which ensure wide-band omnidirectional radiation while its profile height is only 5% of the vacuum wavelength at the lowest operating frequency, which largely makes up for the defect of large profile size commonly existing in existing indoor distributed antennas. The first horizontal polarization unit achieves a bandwidth of 19.6% (3.26GHz-3.97GHz), the second horizontal polarization unit achieves a bandwidth of 49.2% (1.64GHz-2.71GHz), and the vertical polarization unit achieves a bandwidth of 84.0% (1.65GHz-4.04GHz).

The utility model relates to the technical field of antenna structures, and provides a broadband multi-branch dual-frequency antenna and radio frequency equipment, and the broadband multi-branch dual-frequency antenna comprises a dielectric substrate; the antenna main body unit is arranged on the dielectric substrate, and the antenna main body unit comprises a low-frequency branch knot and a high-frequency branch knot which are connected with each other; the grounding unit is connected with the antenna main body unit, and a gap structure is arranged between the grounding unit and the antenna main body unit; the first parasitic branch knot is connected with the grounding unit and is adjacent to the antenna main body unit, the bandwidth of the broadband multi-branch-knot dual-frequency antenna is expanded, and the matching characteristic of the antenna is improved.

The present disclosure provides a semiconductor device, a preparation method thereof, and an electronic device. A low-doped N-type high-resistance region is added above a P+ collector region, thereby increasing the resistance above the P+ collector region. A P-type floating region with a partition region is provided between the N-type high-resistance region and an N-type buffer layer, thereby extending the current path above the P+ collector region. The P+ collector region is provided at the bottom of a first groove in the N-type high-resistance region, thereby increasing the longitudinal distance of the N-type high-resistance region in the collector structure, making the distance from the N+ collector region to the middle position of the P+ collector region farther. Therefore, the parasitic resistance of the device from the middle position of the P+ collector region to the N+ collector region is relatively higher, and the PN junction formed by the P+ collector region / N-type high-resistance region is easier to open, which can more effectively suppress the snapback phenomenon existing in a conventional reverse-conducting device when it is forward-conducted, and at the same time help to improve the forward conduction characteristics and reverse conduction characteristics of the device.

The invention discloses a broadband low-profile magnetoelectric dipole antenna for ultrashort wave directional communication, which comprises an antenna metal floor, a stepped metal feeder line and two rectangular metal sheets, and is characterized in that the stepped metal feeder line is arranged between the two rectangular metal sheets; the inner side of each rectangular metal sheet is fixedly connected with the antenna metal floor through a folding short-circuit metal wall; and two suspended U-shaped parasitic metal sheets are arranged at the corners of the outer side of each rectangular metal sheet. The short-circuit metal wall of the magnetoelectric dipole antenna is folded, so that the profile height of the antenna is effectively reduced, and meanwhile, the short-circuit metal wall of the antenna is slotted, so that the impedance matching characteristic in an antenna band is improved. The four U-shaped parasitic metal sheets are introduced around the antenna, so that the working bandwidth of the antenna is expanded under the condition that the antenna has relatively high gain, and the ultra-short wave directional antenna has the advantages of simple structure, wide frequency band, low profile, high directionality and the like, and can be applied to ultra-short wave directional communication.

The invention discloses a broadband high-performance metasurface antenna applied to an S wave band and a C wave band. The broadband high-performance metasurface antenna comprises a first dielectric layer and a second dielectric layer which are stacked, a metasurface metal layer is arranged on the surface of one side, opposite to the second dielectric layer, of the first dielectric layer, and a plurality of irregular gaps are formed in the metasurface metal layer; the second dielectric layer is provided with a metal feed strip and a metal ground, and the second dielectric layer is provided with a feed hole penetrating through the second dielectric layer, the metal feed strip and the metal ground. According to the broadband high-performance metasurface antenna applied to the S wave band and the C wave band, irregular gaps are formed in the metasurface metal layer, current paths are increased, more current resonance points are generated, and the antenna bandwidth is widened on a fixed design area, so that the broadband characteristic is generated, the technical problem that the bandwidth of a microstrip antenna is narrow is solved, and the antenna performance is improved. And the method can be successfully applied to a multi-band vehicle-mounted application scene.

The utility model relates to the technical field of antennas, in particular to a miniaturized oscillator and an antenna. The vibrator surface is arranged on the upper surface of the vibrator arm, the vibrator surface comprises two groups of radiating bodies which are arranged orthogonally, and a first arc-shaped hollow structure and two second arc-shaped hollow structures which are symmetrically arranged on two sides of the first arc-shaped hollow structure are arranged on the central axis of each radiating body; the loading section is arranged at the corner of the bottom of the oscillator arm and is vertical to the oscillator surface; according to the utility model, by reducing the aperture of the oscillator, the miniaturization of the oscillator is realized.

The invention relates to a glass antenna and a vehicle. The glass antenna comprises a glass piece, a first radiator, a metal frame, a reflecting plate and a feed structure, the first radiating body is arranged in the glass piece, and a tuning gap is formed in the first radiating body so as to prolong a current path and adjust the resonant frequency of the first radiating body; the metal frame and the reflecting plate are arranged outside the glass part, the glass part, the metal frame and the reflecting plate form a reflecting cavity, and the feed structure is arranged in the reflecting cavity to feed the first radiator in a coupling manner. By adopting the scheme, the miniaturization of the antenna can be realized.

A semiconductor structure and a method for forming the same, wherein the method comprises: providing a substrate, the substrate comprising a first region and a second region; forming a plurality of fins on the substrate; forming an isolation structure between adjacent fins; forming a mask layer on the substrate and the fins; removing the mask layer in the first region to form an opening; removing the isolation structure in the first region along the opening; removing the mask layer; forming a gate structure across the fins, the gate structure covering the first region. The semiconductor structure formed by the method of the present invention can reduce the on-resistance of the semiconductor device, increase the breakdown voltage, and thus improve the performance of the semiconductor device.

The present invention discloses an upright base station antenna and communication equipment with a high front-to-back ratio, comprising a reflector, a metal ring, a metal surround and an antenna radiation unit, wherein the antenna radiation unit is arranged on the reflector, the metal ring is arranged above the reflector and nested around the antenna radiation unit, and the metal surround is arranged around the reflector, and the metal surround is grooved. The antenna has the advantages of an upright structure, a small antenna size, a high front-to-back ratio, and small cross polarization.

According to the semiconductor device, the preparation method thereof and the electronic equipment provided by the invention, the resistance above the P + collector region is increased by adding the low-doped N-type high-resistance region above the P + collector region, and the current path above the P + collector region is prolonged by arranging the P-type floating region with the partition region between the N-type high-resistance region and the N-type buffer layer, so that the current path above the P + collector region is prolonged. And the P + collector region is arranged at the bottom of the first groove of the N-type high-resistance region, so that the longitudinal distance of the N-type high-resistance region in the collector structure is increased, the distance from the N + collector region to the middle position of the P + collector region is farther, and the parasitic resistance of the device from the middle position of the P + collector region to the N + collector region is relatively higher; a PN junction formed by the P + collector region / the N-type high-resistance region is easier to open, the snapback phenomenon existing when a conventional reverse conducting device is conducted in the forward direction can be more effectively restrained, and meanwhile the forward conducting characteristic and the reverse conducting characteristic of the device can be improved.

The invention relates to an electrolyzer (2) having a plurality of cell units (4) and having an inlet line (6) for supplying electrolyte to the cell units (4) and an outlet line (8) for discharging electrolyte from the cell units (4), the inlet line (6) and / or the outlet line (8) have, at least in some sections, at least two partial lines (12a to 12t) which are galvanically isolated from one another, the partial lines (12a to 12t) being designed as eccentrically extending partial lines (12a to 12t).

The invention is applicable to the technical field of wireless communication, and provides a slotted cross dipole antenna loaded with an artificial magnetic conductor structure, which comprises three layers of dielectric substrates, namely a first layer of dielectric substrate, a second layer of dielectric substrate and a third layer of dielectric substrate; the two pairs of crossed dipoles are printed on the top and the bottom of the first dielectric substrate in pairs, the surfaces of the crossed dipoles are provided with slots, and each pair of crossed dipoles is connected through a microstrip line segment; the metal columns penetrate through the three layers of dielectric substrates to feed the crossed dipoles; the artificial magnetic conductor structure is printed on the top of the second-layer dielectric substrate; the low-profile broadband high-isolation dual-linear polarization microstrip antenna realizes the characteristics of low profile, broadband, high isolation and dual-linear polarization, and is suitable for the field of Internet of Things and wireless communication.

The present invention discloses a graphene-based circularly polarized ingestible antenna for a capsule endoscope device. The materials of the radiation units and the floor of each layer of the antenna are copper-clad graphene film. The copper-clad graphene film material has a high carrier density and can increase the working bandwidth and gain of the ingestible antenna. The graphene double S combined structure radiation patch (4) and the graphene double S combined structure radiation patch (5) are connected through four short-circuit probes to form a composite spiral structure, thereby generating circular polarization characteristics, reducing the bit error rate while suppressing multipath interference. The hook-shaped combined structure of the graphene hook-shaped combined structure radiation patch can reduce the resonant frequency of the antenna and increase the impedance bandwidth of the antenna. The volume of the antenna is only π×(4.5) 2 mm 3 It has the characteristics of wide bandwidth, circular polarization, anti-interference, good electromagnetic compatibility and small size. It is suitable for ISM 2.4GHz frequency band and can meet the working requirements after being taken into complex environment.

The embodiment of the invention provides an electro-optical modulator, a photon chip and a light quantum computer. The electro-optical modulator comprises a grounding electrode assembly and a signal electrode assembly. The ground electrode assembly includes a first ground electrode and a second ground electrode. The signal electrode assembly is located between the first ground electrode and the second ground electrode. The signal electrode assembly includes a positive signal electrode and a negative signal electrode. The signal electrode assembly is provided with the groove, equivalently, the current path of microwaves is prolonged, the distributed inductance of a transmission line is increased, the microwave speed is reduced, speed matching is more effectively achieved, the large distributed inductance is beneficial to increasing the characteristic impedance of the electrode, impedance matching is achieved, the reflection coefficient of radio-frequency signals is reduced, and the transmission efficiency of the radio-frequency signals is improved. Flat frequency response and higher effective driving voltage are obtained, and bandwidth and modulation efficiency are improved. The overall width of the signal electrode assembly does not change obviously, so that the transmission quality and stability of the system are ensured.

The invention discloses a meandering arm circular patch antenna for microwave thermal therapy, and belongs to the field of medical equipment. According to the meandering arm circular patch antenna, three key factors of robustness, miniaturization and current distribution uniformity are considered; in the aspect of robustness, a mode of loading an annular arm on the periphery of a circular patch is adopted, and a new characteristic mode is excited by utilizing a strong electromagnetic coupling effect between the circular patch and the annular arm, so that the antenna keeps stable performance when facing electromagnetic characteristic difference of human tissues; in the aspect of miniaturization, an annular arm resonance circuit is combined with a meandering flow technology, so that a current path is effectively expanded, and low-frequency resonance is excited; in the aspect of current distribution uniformity, a highly symmetrical annular meandering arm design is adopted, so that the current distribution uniformity is ensured, and the irregularity of energy radiation and a focusing area is avoided; the design has extremely high practical value for the microwave hyperthermia antenna working under complex electromagnetic characteristics.

The application provides a silicon controlled rectifier, a manufacturing method of the silicon controlled rectifier, a chip and a circuit, and belongs to the field of semiconductor devices.The silicon controlled rectifier comprises a substrate, a first well region, a first injection region to a sixth injection region, a first polysilicon region and a second polysilicon region, a second well region and a third well region, a seventh injection region, an eighth injection region and an isolation structure.The first injection region to the sixth injection region are sequentially formed in the first well region along the length direction of the substrate.The second well region and the third well region are formed in the first well region along the width direction of the substrate and are located between the third injection region and the fourth injection region.The seventh injection region is formed in the second well region.The eighth injection region is formed in the third well region.The third injection region and the eighth injection region are connected to a first electrode.The fourth injection region and the seventh injection region are connected to a second electrode.The first injection region, the second injection region, the first polysilicon region, the second polysilicon region, the fifth injection region and the sixth injection region are connected.Through the silicon controlled rectifier provided by the application, the positive feedback effect of the SCR path can be weakened, and the holding voltage can be improved.

The invention belongs to the technical field of LED chips, and provides a flip LED driving chip and a detection device.The flip LED driving chip comprises an LED chip, a plurality of contact pads are fixedly arranged at the lower end of the LED chip, and convex points are fixedly arranged at the lower ends of the contact pads; the heat-conducting layer is fixedly mounted at the lower end of the LED chip, the thickness of the heat-conducting layer is smaller than that of the contact pad, a plurality of holes are formed in the lower end of the heat-conducting layer, the contact pad penetrates through the holes, and the heat-conducting material of the heat-conducting layer is ceramic; according to the invention, the LED chip is inversely welded on the PCB substrate bonding pad by using the salient points, so that the refraction and reflection loss of light rays in the packaging material can be reduced, more light rays can be directly emitted, the light extraction efficiency is improved, and compared with the traditional normal LED driving chip packaging, because a space does not need to be reserved above the chip for lead bonding, the light extraction efficiency is improved. Therefore, the packaging volume can be obviously reduced, the design of the flip LED chip allows a more compact packaging structure, and the realization of miniaturization and light weight of an LED device is facilitated.

The invention relates to the technical field of antennas, in particular to a marginal inductive loading-based radio frequency identification miniaturized narrow-beam antenna, which comprises a top dielectric substrate and a bottom dielectric substrate, the lower surface of the bottom dielectric plate is provided with a reflection copper-clad grounding plate, and the upper surface is provided with a feed network. The upper surface of the top layer dielectric substrate is provided with a rhombus metal patch with two feeding points, and four corners of the rhombus metal patch are respectively located at the midpoint positions of four edges of the top layer dielectric substrate; the four corners of the top layer dielectric substrate are respectively provided with a triangular parasitic patch, and each triangular parasitic patch is connected with the reflection copper-clad grounding plate on the lower surface of the bottom layer dielectric substrate through a short circuit screw. The top layer dielectric substrate and the bottom layer dielectric substrate are kept at an interval of a specific height through the short circuit screws, so that an air layer is formed; and two feed points of the rhombic metal patch are respectively connected with a feed network on the upper surface of the bottom dielectric substrate through a metal probe which vertically penetrates through the air layer.

The invention discloses a double-gate LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and a preparation method thereof, the double-gate LDMOS device comprises a substrate, a buried gate layer, a body region, a drift region, a body electrode, a source electrode, a shallow trench isolation, a drain electrode and a gate oxide layer, wherein the body electrode and the source electrode are positioned in the body region and on the same side as the buried gate layer; the shallow trench isolation is positioned at the top of the drift region; the second grid electrode is positioned above the gate oxide layer; the buried gate layer sequentially comprises a first oxide layer, a first gate and a second oxide layer from bottom to top; and side walls are arranged at two ends of the second grid electrode. Through the arrangement of the buried gate layer, the depletion region can extend more in the N-type drift region, the electric field intensity between the source electrode and the drain electrode is reduced, and then the off-state voltage endurance capability is improved; besides, the structure can generate a channel at the buried gate layer in an on state, so that a current path is increased, the conduction current is increased under the same voltage, and the on-state conduction resistance is reduced while the off-state breakdown voltage is improved.

The invention provides a display panel, a manufacturing method thereof and a display device. The display panel comprises: a substrate; the first electrode layer is positioned on one side of the substrate and comprises a plurality of first electrodes which are arranged at intervals; the pixel definition layer is located on one side of the substrate, and at least part of the top surface of each first electrode is exposed out of the pixel definition layer; the second electrode layer covers the pixel definition layer and the first electrode in a planar graph; wherein the pixel definition layer is provided with a barrier groove between at least two adjacent first electrodes; and the second electrode layer is disconnected at the groove wall of one side of the barrier groove. According to the display panel, the current path is prolonged, the problem of power supply voltage drop caused by voltage loss during current flowing is solved, and the in-plane uniformity and the electrical performance of the display panel are improved.

The invention discloses an ultra-wideband planar spiral antenna based on microwave stroke detection, and relates to the field of microwave antennas. The type of the ultra-wideband planar spiral antenna is a planar Archimedean spiral antenna; the ultra-wideband planar spiral antenna includes an antenna radiator, a feeding balun and a feeding port; the balanced end of the feeding balun is connected to the antenna radiator; the unbalanced end of the feeding balun is connected to the feeding port; the antenna radiator is an Archimedean spiral line radiator loaded with a dodecagonal fold line, and the radiator is a self-complementary antenna; the self-complementary antenna is an Archimedean spiral antenna of a self-complementary structure in which the width of the spiral arm is equal to the width of the air gap; the Archimedean spiral line radiator loaded with a dodecagonal fold line is a radiator in which each spiral arm of the Archimedean spiral antenna is designed to be a dodecagon as a radiator. The volume of the invention is relatively small, and it can meet the needs of attaching multiple patch antennas to the brain for signal collection, which is more conducive to microwave stroke detection.

A radiation patch comprises four rectangular patches which are laid on the top surface of a thin film material plate, a gap is reserved between every two adjacent rectangular patches, and a polygonal groove is formed in the center of each rectangular patch. And the aramid paper honeycomb is used for supporting the thin film material plate and is positioned between the thin film material plate and the feeder dielectric plate. The slotted floor is located on the top surface of the feeder dielectric plate, and the center of the slotted floor is provided with an H-shaped slot. The microstrip feeder is located on the bottom face of the feeder dielectric plate, and the impedance of the microstrip feeder is 50 ohms. The thin film material plate and the aramid paper honeycomb replace a traditional high-frequency microwave plate, so that the weight can be reduced by more than 50%, and the light weight of the antenna is realized. A cross-shaped gap and a polygonal groove are formed in the radiation patch to excite mold stripping and mold combination, a current path is prolonged, and the bandwidth of the antenna is expanded under the condition of low profile. A printing mode is adopted, the structure is simple, and machining and integration are easy.

A silicon carbide MOSFET device includes an N-channel MOSFET and a JFET connected to the N-channel MOSFET with their drain-source current paths in series. The gate of the JFET is connected to the gate of the N-channel MOSFET device through a voltage divider, and the voltage divider is formed on the same chip as the silicon carbide substrate and the first to fourth silicon carbide layers. The protection gate structure may protect the channel oxide from a high drain voltage during the off state. The voltage divider is configured to limit a gate voltage of the JFET such that a silicon carbide PN diode formed within the silicon carbide MOSFET device is turned off when the N-channel MOSFET is turned on or off.

The invention relates to a dual-frequency common-aperture phased-array antenna based on direct feed of a probe, S-band and C-band antennas adopt a common aperture, so that the maximum utilization of aperture resources by two-band transceiving antennas is realized, the transceiving of microwave signals is completed through a single-layer patch, and the dual-frequency common-aperture phased-array antenna has the large-angle scanning capability of + / -51 degrees of a cone; the feed structure adopts a probe direct contact type feed mode, and compared with indirect feed modes such as microstrip line coupling, the energy loss in the space coupling process is reduced, and the radiation efficiency of the antenna is high; the supporting structure of the antenna adopts a polyether-ether-ketone (PEEK) dielectric block which is integrally processed and formed and is used for replacing a traditional microwave dielectric substrate of a patch antenna, so that the weight of the antenna is greatly reduced.