The invention provides a storage unit, a forming method of the storage unit and a driving method of the storage unit. The forming method of the storage unit includes the steps that a
semiconductor substrate is provided, and a first
dielectric layer, a floating gate material layer, a second
dielectric layer, a control gate material layer and a
mask layer are formed on the surface of the
semiconductor substrate; a first side wall is formed on the surface of the side wall of an opening; the control gate material layer is etched to form a first groove; a second side wall is formed; the second
dielectric layer, the floating gate material layer and the first
dielectric layer are etched to form a second groove; a tunneling oxidation layer is formed on the surface of the inner wall of the second groove; word lines are formed on the surface of the tunneling oxidation layer; a first control gate, a first control
gate dielectric layer, a first floating gate, a first floating
gate dielectric layer, a second control gate, a second control
gate dielectric layer, a second floating gate and a second floating gate
dielectric layer are formed; source electrodes and drain electrodes are formed. According to the storage unit formed by the forming method, the two control gates can be controlled only by one control
transistor, therefore, the number of selected transistors can be effectively reduced, and the integration level of a storage is improved.