150results about How to "Achieve planarization" patented technology

The invention discloses a planar-broadband dual-polarization base station antenna and belongs to the field of mobile communication base station antennae. The planar-broadband dual-polarization base station antenna mainly solves the problems that an existing base station antenna is complex in structure and has difficulty in being integrated with other devices. The planar-broadband dual-polarization base station antenna comprises radiation oscillators (1), feed baluns (2), a baffle board (3), coaxial cables (4), supporting columns (5) and a dielectric material plate (6). The radiation oscillators (1) are dual-polarization planar oscillators at +/-45 degrees, and the feed baluns (2) are planar feed baluns at +/-45 degrees. The radiation oscillator at -45 degrees and the feed balun at +45 degrees are printed on the upper surface of the dielectric material plate (6), and the radiation oscillator at +45 degrees and the feed balun at -45 degrees are printed on the lower surface of the dielectric material plate (6). The dielectric material plate (6) is fixed to the square baffle board (3) through the supporting columns (5). According to the planar-broadband dual-polarization base station antenna, planarization of the radiation oscillators and the feed baluns are achieved, meanwhile, the structure of the baffle board is simplified, and a stable directional diagram characteristic can be obtained in broadband.

It is an object of the present invention to alleviate unevenness due to an opening for making a contact with the lower layer even when the opening has a large diameter (1 μm or more). Thus, it is a further object of the invention to reduce defects caused by the unevenness due to the contact hole. It is a feature of the invention to form a wiring by filling the contact hole with conductive fine particles. The conductive fine particles can be easily dispersed into a wiring material by using conductive fine particles having high wettability with the wiring material, thereby making a contact. Thus, planarization of a contact hole can be achieved without performing a reflow process. Further, more planarity can be obtained by performing a reflow process in addition, and the reliability is improved accordingly.

The invention discloses a broadband bionic yagi antenna with a low radar cross section and mainly solves the problems of high radar cross section and relatively narrow band width in the traditional yagi antenna. The antenna simulates an opposite phyllotaxis plant leaf structure and comprises a director (2), a radiating element (3), a parallel strip line (4), a reflector (5) and a coaxial conversion joint (6). The radiating element (3) is of an oval structure, the director (2) simulates a feather-shaped leaf structure, and the reflector (4) is a rectangle patch with a tooth-shaped structure. The radiating element (3) is printed on a top layer and a bottom layer of a double-layer medium material plate (1) and respectively connected with an inner core and an outer core of the coaxial conversion joint (6) by the parallel strip line (4); the director (2) is printed on the top layer of the double-layer medium material plate (1); and the reflector (4) is printed between two layers of the double-layer medium material plate (1). The broadband bionic yagi antenna with the low radar cross section has the advantages of wide frequency band and good invisibility performance and can be used on an invisible target carrier.

A novel polisher for chemical mechanical planarization process is described. The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2″ and as large as 18″. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level.

The invention relates to a wideband log-periodic dipole array antenna for feeding a substrate integrated waveguide. An upper metal coating (2) is provided with an upper assembly line (5), upper feed source element antennae (7), an upper surface (9) of the substrate integrated waveguide, a microstrip taper transition line (6) and a 50-ohm output microstrip line (8) which are sequentially connected, wherein the upper assembly line (5) is connected with the upper surface (9) of the substrate integrated waveguide, the upper feed source element antennae (7) are respectively arranged at both sides of the upper assembly line (5); a lower metal coating (3) comprises a lower surface assembly line (11) of the log-periodic dipole array antenna, lower surface feed source element antennae (12), a lower surface (13) of the substrate integrated waveguide and a ground surface (14) of a microstrip line; the lower surface assembly line (11) of the log-periodic dipole array antenna is symmetric in parallel to the upper assembly line (5) of the log-periodic dipole array antenna, the lower surface feed source element antennae (12) are symmetric in cross to the upper feed source element antennae (7); and the lower surface (13) of the substrate integrated waveguide is symmetric to the upper surface (9) of the substrate integrated waveguide and is connected with the ground surface (14) of the microstrip line.

The invention discloses a high-electron-mobility transistor device and a manufacture method thereof. The high-electron-mobility transistor device comprises a substrate; a buffer layer arranged on the substrate; a channel layer arranged on the buffer layer and used for providing a carrier moving channel; a barrier layer arranged on the channel layer and used for providing carriers for the channel layer and blocking the carriers in the channel layer from flowing to the barrier layer; and a source electrode, a drain electrode and a grid electrode, which are arranged on the barrier layer, wherein the grid electrode is arranged between the source electrode and the drain electrode. The concentration of the carriers in the channel layer under the grid electrode is not a fixed value along the grid width direction, and is in non-monotone change. Trench etching technique or ion implantation technique are utilized to control the concentration of the carriers in the channel layer under the grid electrode to change as needed, thereby realizing planarization of a transfer transconductance curve, and achieving the purpose of improving linearity of the high-electron-mobility transistor device.

A power amplification module of frequency conversion is featured as filtering out secondary harmonic wave component from frequency doubled signal by local oscillator filter ; carrying out frequency conversion in frequency mixer after filtered - out frequency double signal is amplified by local oscillator amplifier ; amplifying converted frequency signal by radio amplifier ; carrying out band pass filtering of radio frequency signal by filter ; using gain amplifier , power driving amplifier and power synthetic amplifier to be pre-amplification and high power amplification for outputting high power mm wave signal .

The invention discloses a wideband Yagi aerial for half-mould substrate integrated waveguide feed, comprising a dielectric substrate which is provided with a metal coating on both sides. The structurecomprises a half-mould substrate integrated waveguide, a Yagi aerial, a micro-strip gradual-change transition wire and a 50 Ohm micro-strip output wire. The half-mould substrate integrated waveguidecomprises a metallic through hole, an upper metal coating and a lower metal coating. The Yagi aerial comprises a wave director, a cross feed source matrix of upper and lower surfaces, and parallel wires. For measuring conveniently, the micro-strip gradual-change transition wire is connected between the half-mould substrate integrated waveguide and the 50 Ohm micro-strip output wire. The half-mouldsubstrate integrated waveguide structure is used as the feeding structure of aerial, so the 180 DEG balanced line structure with a current phase difference of upper and lower metal surfaces is formedand can be directly connected to the Yagi aerial. For improving the plus, four wave directors are used to form a printed antenna structure, with wideband, high plus, low cost and low outline.

The present invention relates to a polishing head which is used in a chemical mechanical polishing device of a semiconductor wafer. The polishing head comprises a rotating shaft, and an upper cover plate, a driving disc, a base disc, a retaining ring and a back membrane which are orderly arranged along the rotating shaft from the top to the bottom. The driving disc is fixed on a transmission shaft. The upper cover plate is fixed on the base disc and is equipped with a spring top pin. The top of the spring top pin is contacted with the inner upper surface of the upper cover plate. A drive pin is arranged between the driving disc and the base disc. The back membrane is stunk on the lower surface of the base disc, and the surrounding edge of the back membrane is provided with a fixing ring which is fixed on the base disc. The retaining ring is hung at the base disc. A movable balance joint device is arranged between the driving disc and the base disc. The polishing head has good polishing quality and high polishing planeness.

The invention provides an absorption stage, wherein workpieces can be held in a flat state without increasing the working time and lowering the product accuracy. When the absorption stage (40) is in use, a workpiece (22) are held on a flat loading surface (40b). The workpiece (22) is exposed to light so as to be imaged as a predetermined mask pattern, wherein the absorption stage comprises a fixed adsorption mechanism (60) capable of absorbing the workpiece (22) to fix the workpiece (22) relative to the flat loading surface (40b); a plane adsorption mechanism (70) capable of enabling the workpiece (22) to abut against the loading surface (40b) and provided with a plurality of planar adsorption holes (71) opened on the loading surface (40b).

The invention provides an array substrate, a manufacturing method thereof and a display device, and belongs to the technical field of displaying. The array substrate comprises a first conductive pattern, an insulating layer with which the first conductive pattern is covered and a second conductive pattern located on the insulating layer. The insulating layer comprises a via hole for connecting the first conductive pattern and the second conductive pattern, and a conducting post connected with the first conductive pattern and the second conductive pattern is formed in the through hole. By means of the array substrate in the technical scheme, the poor Mura caused by uneven diffusion of an alignment film at the via hole can be overcome, and the display effect of the display device can be improved.

The invention provides an OLED packaging method and an OLED packaging structure. The OLED packaging method, by forming a buffer granular layer, realizes the planarization of a film packaging layer and reduces the fracture probability of the film packaging layer located at the edges of light-emitting pixels. The buffer granular layer can simultaneously resist water and oxygen so as to enhance the packaging effect of the prepared OLED packaging structure. The OLED packaging method, by forming the buffer granular layer, realizes the planarization of the film packaging layer and reduces the fracture probability of the film packaging layer located at the edges of light-emitting pixels, and has an excellent packaging effect.

The embodiment of the invention discloses an organic light emitting diode display panel and a manufacturing method thereof, and a display device. The method comprises: forming a thin film comprising organic materials and electromagnetic field response particles; and applying and applied electric field and/or magnetic field to allow the electromagnetic field response particles to drive the flow of the organic materials under the action of the applied electric field and/or the magnetic field to form a flat layer after planarization. According to the embodiment of the invention, the electromagnetic field response particles are added to allow the electromagnetic field response particles to be moved under the action of the applied electric field and/or the magnetic field and drive the movement of the organic materials with the movement of the electromagnetic field response particles so as to realize planarization of the flat layer, allow the OLED film layer manufactured on the flat layer to be more uniform and improve the luminescence uniformity in the pixels in the OLED device.

A lid (70) can take an intermediate lid closure position in addition to a lid closed position and a lid open position. In order to enable the above, at the lid open position, the entire lid (70) is placed on the inner side of an aesthetically designed surface of a decorative panel to make the lid (70) completely flat, and at the intermediate lid closure position, the lid (70) is protruded and exposed from the decorative panel, which allows a user to close the lid (70) while holding the protruded exposed portion.

The invention aims at providing a plane magneto-optical isolator which is used for overcoming the defect that the existing magneto-optical isolator is large in size and incapable of meeting the requirements of miniaturization and planarization. The plane magneto-optical isolator comprises a polarizer, a faraday rotor and an analyzer, all of which are arranged in parallel to each other in a light passing direction; the plane magneto-optical isolator is characterized in that the faraday rotor is composed of a substrate, a magneto-optical thin film layer, a first microstrip line layer, an insulating layer and a second microstrip line layer, wherein the magneto-optical thin film layer, the first microstrip line layer, the insulating layer and the second microstrip line layer are symmetrically arranged at the two sides of the substrate. The first microstrip line layer is composed of transverse microstrip lines, while the second microstrip line layer is composed of longitudinal microstrip lines, or the first microstrip line layer is composed of the longitudinal microstrip lines, while the second microstrip line layer is composed of the transverse microstrip lines. Due to the optimized design of the faraday rotor structure, the size of the magneto-optical isolator is greatly reduced and the miniaturization and planarization of the magneto-optical isolator are realized.

A broadband planar printed dipole antenna is provided with two large dipole arms (3a and 3b), two small dipole arms (4a and 4b), exponential type gradient line feed microstrip lines (1), connecting lines (5) for connecting the small dipole arms with the feed microstrip lines, and a medium plate (2). The innovation of the antenna structure is to adopt a two-layer printed circuit structure of front and back surfaces of the medium plate: two pairs of large dipole arms (3a and 3b) and small dipole arms (4a and 4b) and the exponential type gradient line feed microstrip lines (1) are printed on the front and the back surfaces of the medium plate (2), so that the wide frequency band matching property and a stable directional diagram are realized; when the standing-wave ratio is less than 2, the band width can achieve 70%, and the directional diagram in the working frequency section is stable. The antenna has the characteristics of small size, light weight, facilitation of integration in various planar devices and simple feed system. As a result, the antenna has the advantages of low production cost, planar structure, wide working frequency band and excellent promotion and application prospect.

The invention discloses a chemically mechanical polishing solution used for shallow-trench isolation. The polishing solution at least contains one silicon-based abrasive material, one water-soluble anionic surfactant and one pH regulator, and has higher silica removal rate and lower silicon nitride removal rate, a polished surface is smooth and clean, and the chemically mechanical polishing solution has good stability and is suitable for the chemical-mechanical planarization for the shallow-trench isolation.