151results about How to "Achieve planarization" patented technology

The invention discloses a planar-broadband dual-polarization base station antenna and belongs to the field of mobile communication base station antennae. The planar-broadband dual-polarization base station antenna mainly solves the problems that an existing base station antenna is complex in structure and has difficulty in being integrated with other devices. The planar-broadband dual-polarization base station antenna comprises radiation oscillators (1), feed baluns (2), a baffle board (3), coaxial cables (4), supporting columns (5) and a dielectric material plate (6). The radiation oscillators (1) are dual-polarization planar oscillators at + / -45 degrees, and the feed baluns (2) are planar feed baluns at + / -45 degrees. The radiation oscillator at -45 degrees and the feed balun at +45 degrees are printed on the upper surface of the dielectric material plate (6), and the radiation oscillator at +45 degrees and the feed balun at -45 degrees are printed on the lower surface of the dielectric material plate (6). The dielectric material plate (6) is fixed to the square baffle board (3) through the supporting columns (5). According to the planar-broadband dual-polarization base station antenna, planarization of the radiation oscillators and the feed baluns are achieved, meanwhile, the structure of the baffle board is simplified, and a stable directional diagram characteristic can be obtained in broadband.

It is an object of the present invention to alleviate unevenness due to an opening for making a contact with the lower layer even when the opening has a large diameter (1 μm or more). Thus, it is a further object of the invention to reduce defects caused by the unevenness due to the contact hole. It is a feature of the invention to form a wiring by filling the contact hole with conductive fine particles. The conductive fine particles can be easily dispersed into a wiring material by using conductive fine particles having high wettability with the wiring material, thereby making a contact. Thus, planarization of a contact hole can be achieved without performing a reflow process. Further, more planarity can be obtained by performing a reflow process in addition, and the reliability is improved accordingly.

The invention discloses a broadband bionic yagi antenna with a low radar cross section and mainly solves the problems of high radar cross section and relatively narrow band width in the traditional yagi antenna. The antenna simulates an opposite phyllotaxis plant leaf structure and comprises a director (2), a radiating element (3), a parallel strip line (4), a reflector (5) and a coaxial conversion joint (6). The radiating element (3) is of an oval structure, the director (2) simulates a feather-shaped leaf structure, and the reflector (4) is a rectangle patch with a tooth-shaped structure. The radiating element (3) is printed on a top layer and a bottom layer of a double-layer medium material plate (1) and respectively connected with an inner core and an outer core of the coaxial conversion joint (6) by the parallel strip line (4); the director (2) is printed on the top layer of the double-layer medium material plate (1); and the reflector (4) is printed between two layers of the double-layer medium material plate (1). The broadband bionic yagi antenna with the low radar cross section has the advantages of wide frequency band and good invisibility performance and can be used on an invisible target carrier.

A novel polisher for chemical mechanical planarization process is described. The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2″ and as large as 18″. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level.

The invention belongs to an integrated microtrip ferrite circulator in solid electronic devices, comprising a dielectric or a semiconductor substrate, a high-conductivity metal block or an earthing membrane, a ferrite membrane, a high-conductivity centre junction, a matching section of the high-conductivity centre junction and a high-conductivity earthing membrane, wherein, the dielectric is provided with a groove at the bottom; the high-conductivity metal block is arranged in the groove; the ferrite membrane is adhered above the substrate; the high-conductivity centre junction tightly clingsto the ferrite membrane; the high-conductivity earthing membrane is positioned on the bottom surface of the substrate. The circulator is additionally provided with a groove at the bottom surface of the substrate, a metal block is arranged in the groove, wherein, the volume of the metal block is the same as that of the groove, or an earthing membrane is covered on the internal surface of the groove, so that the effective permeability tensor k / mu is greatly improved, while the impedance is greatly reduced; on the premise of the same performance and compared with the background technology, the volume and thickness of the circulator can be effectively reduced; on the premise that the performance and the reliability of the ferrite circulator are ensured, the volume and thickness of the circulator can be effectively reduced; miniaturization, planarity and the convenient integration of microwave circuits are realized, thus the development of monolithic microwave integrated circuit is promoted.

The invention relates to a wideband log-periodic dipole array antenna for feeding a substrate integrated waveguide. An upper metal coating (2) is provided with an upper assembly line (5), upper feed source element antennae (7), an upper surface (9) of the substrate integrated waveguide, a microstrip taper transition line (6) and a 50-ohm output microstrip line (8) which are sequentially connected, wherein the upper assembly line (5) is connected with the upper surface (9) of the substrate integrated waveguide, the upper feed source element antennae (7) are respectively arranged at both sides of the upper assembly line (5); a lower metal coating (3) comprises a lower surface assembly line (11) of the log-periodic dipole array antenna, lower surface feed source element antennae (12), a lower surface (13) of the substrate integrated waveguide and a ground surface (14) of a microstrip line; the lower surface assembly line (11) of the log-periodic dipole array antenna is symmetric in parallel to the upper assembly line (5) of the log-periodic dipole array antenna, the lower surface feed source element antennae (12) are symmetric in cross to the upper feed source element antennae (7); and the lower surface (13) of the substrate integrated waveguide is symmetric to the upper surface (9) of the substrate integrated waveguide and is connected with the ground surface (14) of the microstrip line.

The invention discloses a high-electron-mobility transistor device and a manufacture method thereof. The high-electron-mobility transistor device comprises a substrate; a buffer layer arranged on the substrate; a channel layer arranged on the buffer layer and used for providing a carrier moving channel; a barrier layer arranged on the channel layer and used for providing carriers for the channel layer and blocking the carriers in the channel layer from flowing to the barrier layer; and a source electrode, a drain electrode and a grid electrode, which are arranged on the barrier layer, wherein the grid electrode is arranged between the source electrode and the drain electrode. The concentration of the carriers in the channel layer under the grid electrode is not a fixed value along the grid width direction, and is in non-monotone change. Trench etching technique or ion implantation technique are utilized to control the concentration of the carriers in the channel layer under the grid electrode to change as needed, thereby realizing planarization of a transfer transconductance curve, and achieving the purpose of improving linearity of the high-electron-mobility transistor device.

The invention provides a preparation method of an MEMS microbridge structure. The method comprises the following steps: 1. preparing a reflecting layer on the surface area of a substrate; 2. preparing a sacrificial layer on the surface area of the reflecting layer, etching a supporting hole on the sacrificial layer; 3. successively preparing a supporting layer, a sensitive layer and a medium layer on the surface area of the sacrificial layer; 4. patterning the inside of the supporting hole and the bridge surface area, forming a contact hole; 5. depositing a metal electrode layer and metal copper on the surface area of the medium layer, flattening metal copper until the medium layer; and 6. removing the sacrificial layer and forming the finished microbridge structure. The preparation method uses the copper pillar instead of the traditional aluminum pillar and utilizes the copper chemical-mechanical polishing method to realize the self-alignment patterning of the metal electrode so that the planarization of the microbridge structure can be realized, the connection resistance can be effectively reduced and the complexity of the process can also be reduced.

A power amplification module of frequency conversion is featured as filtering out secondary harmonic wave component from frequency doubled signal by local oscillator filter ; carrying out frequency conversion in frequency mixer after filtered - out frequency double signal is amplified by local oscillator amplifier ; amplifying converted frequency signal by radio amplifier ; carrying out band pass filtering of radio frequency signal by filter ; using gain amplifier , power driving amplifier and power synthetic amplifier to be pre-amplification and high power amplification for outputting high power mm wave signal .

The invention discloses a wideband Yagi aerial for half-mould substrate integrated waveguide feed, comprising a dielectric substrate which is provided with a metal coating on both sides. The structurecomprises a half-mould substrate integrated waveguide, a Yagi aerial, a micro-strip gradual-change transition wire and a 50 Ohm micro-strip output wire. The half-mould substrate integrated waveguidecomprises a metallic through hole, an upper metal coating and a lower metal coating. The Yagi aerial comprises a wave director, a cross feed source matrix of upper and lower surfaces, and parallel wires. For measuring conveniently, the micro-strip gradual-change transition wire is connected between the half-mould substrate integrated waveguide and the 50 Ohm micro-strip output wire. The half-mouldsubstrate integrated waveguide structure is used as the feeding structure of aerial, so the 180 DEG balanced line structure with a current phase difference of upper and lower metal surfaces is formedand can be directly connected to the Yagi aerial. For improving the plus, four wave directors are used to form a printed antenna structure, with wideband, high plus, low cost and low outline.

The present invention relates to a polishing head which is used in a chemical mechanical polishing device of a semiconductor wafer. The polishing head comprises a rotating shaft, and an upper cover plate, a driving disc, a base disc, a retaining ring and a back membrane which are orderly arranged along the rotating shaft from the top to the bottom. The driving disc is fixed on a transmission shaft. The upper cover plate is fixed on the base disc and is equipped with a spring top pin. The top of the spring top pin is contacted with the inner upper surface of the upper cover plate. A drive pin is arranged between the driving disc and the base disc. The back membrane is stunk on the lower surface of the base disc, and the surrounding edge of the back membrane is provided with a fixing ring which is fixed on the base disc. The retaining ring is hung at the base disc. A movable balance joint device is arranged between the driving disc and the base disc. The polishing head has good polishing quality and high polishing planeness.

The invention relates to a copper interconnection manufacturing method belonging to the field of micro-nano manufacture. The method utilizes the sputtering or atomic layer deposition technology to prepare a copper nitride film, and utilizes a femtosecond laser writing technology to form copper elementary substance at the area needing metal interconnection by using laser decomposition, thus realizing copper interconnection by one step; and since the metal copper is formed by conducting laser thermal decomposition on the plane of the copper nitride, additional chemical polishing is not needed to realize surface planarization.

The invention provides an absorption stage, wherein workpieces can be held in a flat state without increasing the working time and lowering the product accuracy. When the absorption stage (40) is in use, a workpiece (22) are held on a flat loading surface (40b). The workpiece (22) is exposed to light so as to be imaged as a predetermined mask pattern, wherein the absorption stage comprises a fixed adsorption mechanism (60) capable of absorbing the workpiece (22) to fix the workpiece (22) relative to the flat loading surface (40b); a plane adsorption mechanism (70) capable of enabling the workpiece (22) to abut against the loading surface (40b) and provided with a plurality of planar adsorption holes (71) opened on the loading surface (40b).

The invention provides an array substrate, a manufacturing method thereof and a display device, and belongs to the technical field of displaying. The array substrate comprises a first conductive pattern, an insulating layer with which the first conductive pattern is covered and a second conductive pattern located on the insulating layer. The insulating layer comprises a via hole for connecting the first conductive pattern and the second conductive pattern, and a conducting post connected with the first conductive pattern and the second conductive pattern is formed in the through hole. By means of the array substrate in the technical scheme, the poor Mura caused by uneven diffusion of an alignment film at the via hole can be overcome, and the display effect of the display device can be improved.

The invention discloses a grid manufacturing method. The grid manufacturing method comprises the steps of: forming a grid dielectric layer and a polysilicon grid; forming a hard mask layer superposedby a first nitride layer and a second oxide layer; forming a grid through photolithography etching; forming a nitride layer sidewall on a side surface of the grid; forming a nitride layer contact holeetching stop layer; forming an oxide layer interlayer film; performing a first chemical mechanical polishing of the oxide layer by using the contact hole etching stop layer as a stop layer; performing nitride layer etching to remove the nitride layer on the top of the second oxide layer of each grid; etching the oxide layer to remove the second oxide layer on the top of the grid, wherein the thickness of the interlayer film is synchronously reduced; using the polysilicon grid as a stop layer to perform a second chemical mechanical polishing on the remaining nitride and oxide layers above thetop surface of the polysilicon grid. The invention can realize stable control of the height of the grid, can improve the consistency of the grid height, does not require a photomask, and is low in cost.

The present invention belongs to the display technological field and discloses a flexible display device. The flexible display device comprises a flexible substrate and a flexible-rigid conversion layer formed on one side of the flexible substrate, wherein the flexible-rigid conversion layer comprises a conversion thin film which can undergo flexible-grid conversion under the action of an electricfield and an electrode layer which is used for forming the electric field that drives the change of the conversion thin film. The elastic parameter of the conversion thin film of the flexible displaydevice provided by the invention can be switched under the action of the electric field, the conversion thin film can be switched to a rigid layer from a flexible layer, and therefore, the flatteningof the flexible substrate can be realized; and on the basis of the conversion of the conversion thin film, damage to the flexible substrate during a process of a plurality of times of repeated coiling and unfolding can be decreased, the service life of the display device can be prolonged, and the display quality of the display device can be improved.

The invention provides an OLED packaging method and an OLED packaging structure. The OLED packaging method, by forming a buffer granular layer, realizes the planarization of a film packaging layer and reduces the fracture probability of the film packaging layer located at the edges of light-emitting pixels. The buffer granular layer can simultaneously resist water and oxygen so as to enhance the packaging effect of the prepared OLED packaging structure. The OLED packaging method, by forming the buffer granular layer, realizes the planarization of the film packaging layer and reduces the fracture probability of the film packaging layer located at the edges of light-emitting pixels, and has an excellent packaging effect.

The embodiment of the invention discloses an organic light emitting diode display panel and a manufacturing method thereof, and a display device. The method comprises: forming a thin film comprising organic materials and electromagnetic field response particles; and applying and applied electric field and / or magnetic field to allow the electromagnetic field response particles to drive the flow of the organic materials under the action of the applied electric field and / or the magnetic field to form a flat layer after planarization. According to the embodiment of the invention, the electromagnetic field response particles are added to allow the electromagnetic field response particles to be moved under the action of the applied electric field and / or the magnetic field and drive the movement of the organic materials with the movement of the electromagnetic field response particles so as to realize planarization of the flat layer, allow the OLED film layer manufactured on the flat layer to be more uniform and improve the luminescence uniformity in the pixels in the OLED device.

The present invention is configured to detect a flow volume by means of a measuring flow channel (1) composed of layer-like flow channels, and a pair of ultrasonic sensors (7, 8), which are disposed on the same wall surface side of the measuring flow channel (1) such that an ultrasonic wave propagation path using reflection on the flow channel inner wall surface (1c) on the facing side is configured. A control rod (9), i.e., a fluid control means, is disposed at the front in the upstream of partitioning plates, said partitioning plates constituting a multilayer section.

The invention aims at providing a plane magneto-optical isolator which is used for overcoming the defect that the existing magneto-optical isolator is large in size and incapable of meeting the requirements of miniaturization and planarization. The plane magneto-optical isolator comprises a polarizer, a faraday rotor and an analyzer, all of which are arranged in parallel to each other in a light passing direction; the plane magneto-optical isolator is characterized in that the faraday rotor is composed of a substrate, a magneto-optical thin film layer, a first microstrip line layer, an insulating layer and a second microstrip line layer, wherein the magneto-optical thin film layer, the first microstrip line layer, the insulating layer and the second microstrip line layer are symmetrically arranged at the two sides of the substrate. The first microstrip line layer is composed of transverse microstrip lines, while the second microstrip line layer is composed of longitudinal microstrip lines, or the first microstrip line layer is composed of the longitudinal microstrip lines, while the second microstrip line layer is composed of the transverse microstrip lines. Due to the optimized design of the faraday rotor structure, the size of the magneto-optical isolator is greatly reduced and the miniaturization and planarization of the magneto-optical isolator are realized.

A first electrode layer (14), which comes into contact with a source region (12), and a second electrode layer (15), which comes into contact with a body (back gate) region (13), are provided. The first and second electrode layers (14, 15) are insulated from each other and are extended in a direction different from an extending direction of a trench (5). It is possible to individually apply potentials to the first and second electrode layers (14, 15), and to perform control for preventing a reverse current caused by a parasitic diode. Therefore, a bidirectional switching element can be realized by use of one MOSFET.

A broadband planar printed dipole antenna is provided with two large dipole arms (3a and 3b), two small dipole arms (4a and 4b), exponential type gradient line feed microstrip lines (1), connecting lines (5) for connecting the small dipole arms with the feed microstrip lines, and a medium plate (2). The innovation of the antenna structure is to adopt a two-layer printed circuit structure of front and back surfaces of the medium plate: two pairs of large dipole arms (3a and 3b) and small dipole arms (4a and 4b) and the exponential type gradient line feed microstrip lines (1) are printed on the front and the back surfaces of the medium plate (2), so that the wide frequency band matching property and a stable directional diagram are realized; when the standing-wave ratio is less than 2, the band width can achieve 70%, and the directional diagram in the working frequency section is stable. The antenna has the characteristics of small size, light weight, facilitation of integration in various planar devices and simple feed system. As a result, the antenna has the advantages of low production cost, planar structure, wide working frequency band and excellent promotion and application prospect.

The invention relates to an organosiloxane polymer, a preparation method of the organosiloxane polymer, a color photoresist containing the organosiloxane polymer, a color filter adopting the color photoresist and a preparation method of the color filter. The organosiloxane polymer can replace a levelling agent and a coupling agent in a color photoresist formula, and is superior to the traditional levelling agent or the coupling agent in the respect of a degree of polarity matching with other resins and solvents. An intramolecular pressure difference delta-F formed between double interfaces of a coated color film of the color photoresist and a substrate is controllable. The color photoresist realizes control of colloid shrinkage and forms a uniform coating having small shrinkage. The color photoresist realizes flatting of a coated color film, and good adhesiveness of pixel units and align markers on the color filter. A sample obtained by the preparation method of the color filter realizes excellent color uniformity, has high precision and prevents uneven compression of a liquid crystal display panel.

The embodiment of the invention discloses an alignment method for a liquid crystal display panel. The alignment method comprises the steps of providing a first substrate and a second substrate, wherein the first substrate is provided with a first alignment layer, and the second substrate is provided with a second alignment layer; dividing the first alignment layer and the second alignment layer into at least one divided area, wherein each divided area comprises a plurality of alignment areas, and the preset alignment directions of the alignment areas corresponding to the first alignment layer and the second alignment layer are perpendicular to each other; respectively irradiating the alignment areas of the first alignment layer and the second alignment layer by the adoption of linearly polarized light in different directions, and therefore forming alignment membranes corresponding to the preset alignment directions of the alignment areas on the first alignment layer and the second alignment layer. The embodiment of the invention further discloses a corresponding liquid crystal display device. According to the alignment method for the liquid crystal display panel and the corresponding liquid crystal display device, the alignment effect is good, and large-visual-angle color cast can be improved.

The invention discloses a manufacturing method of a super junction device. The method comprises the following steps: the step 1, forming a gate structure which is a trench gate, filling a gate trenchwith a polysilicon gate in the forming process of the trench gate, then carrying out first planarization to enable the surface of a first epitaxial layer with the trench gate to be a flat surface, andenabling the width of the gate trench at the leading-out position of the gate structure to meet the requirement of forming a contact hole; and the step 2, forming a super junction in the first epitaxial layer with the flat surface on which the trench gate is formed, wherein in the forming process of the super junction, a second epitaxial layer is adopted to fill the super junction trench, and then secondary planarization is performed, so that the surface of the first epitaxial layer with the super junction is a flat surface. According to the invention, the full-flat process can be realized, the trench gate process can be conveniently arranged before the super junction forming process, and the thermal process after the super junction is formed can be reduced, so that the mutual diffusion of impurities of the super junction is reduced, the device performance is improved, a photomask can be saved, and the process cost is reduced.

The invention discloses a dual polarization slot antenna based on the SIW technology. The advantages of the SIW technology, the advantages of a dual polarization antenna and the advantages of a slot antenna are combined in the dual polarization slot antenna. A homocentric square slot is additionally formed in a copper coated layer on the top of a dielectric layer based on the SIW technology, the frequency is adjusted by adjusting the width of the homocentric square slot so that the frequency of the dual polarization slot antenna can meet the requirement; the dual polarization antenna is adopted, and a positive 45-degree antenna and a negative 45-degree antenna with the polarization directions being orthometric are combined and work under a receiving and transmitting duplex mode at the same time; coupled feeding is adopted, and signals are sent to the upper portion of the antenna through the slot in the copper coated layer at the bottom of the dielectric layer. According to the dual polarization slot antenna, the advantages of the SIW technology, the advantages of the dual polarization antenna and the advantages of the slot antenna are combined, the planarity and miniaturization of the dual polarization slot antenna are achieved based on the SIW technology, and the antenna and a circuit can be integrated.

The invention discloses a chemically mechanical polishing solution used for shallow-trench isolation. The polishing solution at least contains one silicon-based abrasive material, one water-soluble anionic surfactant and one pH regulator, and has higher silica removal rate and lower silicon nitride removal rate, a polished surface is smooth and clean, and the chemically mechanical polishing solution has good stability and is suitable for the chemical-mechanical planarization for the shallow-trench isolation.