65results about How to "Reduce interdiffusion" patented technology

A process for reducing the incidence of a secondary reaction zone (SRZ) in alloys prone to SRZ formation, particularly superalloys that have a high refractory element content. The process finds use with articles having a wall region that defines external and internal surfaces on the exterior and within the article, respectively. Diffusion coatings are formed on the internal and external surfaces of the article, with at least the diffusion coating on the external surface comprising an additive layer and a diffusion zone that is beneath the additive layer and extends into the wall region. The additive layer and at least a portion of the diffusion zone of the external diffusion coating is then removed to define an exposed surface region on the exterior of the article. An overlay coating is then deposited on the exposed surface region.

Copper-based cermets and methods of preparing them are provided. The Cu-based cermets have interpenetrating networks of copper alloy and stabilized zirconia that are in intimate contact and display high electronic connectivity through the copper alloy phase. In certain embodiments, methods of preparing the cermets involving sintering a mixture of ceramic and copper-based powders in a reducing atmosphere at a temperature above the melting point of the copper or copper alloy are provided. Also provided are electrochemical structures having the Cu-based cermet, e.g., as an anode structure or a barrier layer between an anode and a metal support. Applications of the cermet compositions and structures include use in high-operating-temperature electrochemical devices, including solid oxide fuel cells, hydrogen generators, electrochemical flow reactors, etc.

The invention discloses a metal support half-cell of a solid oxide fuel cell and a preparation method thereof. The half-cell comprises a porous metal supporting layer thick membrane, a porous cermet gradient transition layer film, a porous anode layer and a compact electrolyte layer film from down to up. The porous gradient transition layer composed of a mixed oxide and a oxide with a fluorite structuring can avoid the direct contact of the porous metal supporting layer and the porous anode layer, and the mutual diffusion of Fe/Cr elements in the metal supporting layer and Ni element in the porous anode layer can be reduced under high temperature sintering condition. The mixed oxide is reduced to an alloy under the work condition of the cell; a high anode active material is formed at a side interface of the anode, a high conductivity composite material which takes the alloy as a main phase is formed on the side interface of a metal support body, so that higher conductivity is presented, ohmic resistance is reduced, electrocatalytic activity is not reduced, long-term stability for operation of the cell can be ensured, and good combination of the porous metal supporting layer and the porous anode layer can be simultaneously realized.

The invention discloses a method for preparing a flat-plate type metal-support solid oxide fuel cell. The method comprises the following steps of: firstly respectively preparing three layers of biscuits such as a porous metal support layer, a compact electrolyte layer and a porous cathode precursor layer, then superimposing from bottom to top in sequence for carrying out hot pressing, then carrying out high-temperature common sintering, using a surface active agent to carry out surface treatment on the porous metal support layer, finally immersing a salt solution of an active cathode material in the porous cathode precursor layer, and performing heat treatment, so as to obtain a cathode of the cell; and immersing a salt solution of an active anode material in the porous metal support layer, performing the heat treatment, so as to obtain an anode of the cell. The method has the advantages that the cost is low, the operability is strong, the batched and continuous production is convenient; and according to the prepared cell, the combination among all the layers is close, the thickness, the porosity and the like of all the function layers can be controlled, the cathode and the anode of the cell are prepared by immersion, the performance of the cell is high, the stability is good, the service life of an electric pile can be guaranteed, the cost of a system is reduced and the application prospect is very good.

Semiconductor regions are alternately arranged in a parallel pn layer in which an n-type region and a p-type region are alternately arranged parallel to the main surface of a semiconductor substrate. Pitch between n drift region and p partition region of a second parallel pn layer in an edge termination region is two thirds of pitch between n drift region and p partition region of a first parallel pn layer in an active region. At boundaries between main SJ cells and fine SJ cells at four corners of the semiconductor substrate having rectangular shape in plan view, ends of two pitches of main SJ cells face the ends of three pitches of fine SJ cells. In this way, it is possible to reduce the influence of a process variation and thus reduce mutual diffusion between n drift region and p partition region of the fine SJ cell.

The invention discloses a miniature PVD coat miller cutter for PCB, and a making method thereof. The miniature PVD coat miller cutter for PCB comprises a substrate and one or more layers of a hard and wear-resistant coat deposited on the substrate through a physical vapor deposition process; the hard and wear-resistant coat is an MeCxNyOz coat, Me is one or more of Al, Cr, Ti, Zr, Si, Hf, Nb, Ni, W, Ta, B, V, Y and Cu, and x+y+z is 1; and the total thickness of the one or more layers of the coat on the substrate is 0.1-10mum. The substrate is made by using a cemented carbide material, a ceramet material, a ceramic material, a cubic boron nitride based material or a high-speed steel material. By improving the structure of the PVD coat in the invention, a processing problem that printed circuit boards are difficult to process is overcome, and a problem that the service life of a common miniature milling cutter is short is prolonged.

The invention provides a method for directly growing a carbon nano tube array on a fiber substrate. The method comprises the following steps: (1) pre-treating the fiber substrate; (2) attaching a catalyst precursor on the surface of the substrate obtained in the step 1, wherein the catalyst comprises transitional metal elements such as Fe, Co, Ni, Cu, Au, Pt, Mo or Ag; (3) putting the substrate obtained in the step (2) in a reaction furnace, heating the substrate to a first temperature and maintaining for a preset time, and introducing inert gas to remove organic matters in the catalyst precursor; (4) heating to a second temperature and maintaining for a preset time, continuously introducing inert gas, introducing mixed gas of reductive gas and carbon source gas, maintaining the pressure in the reaction furnace, and growing high-density carbon nano tubes on the surface of the substrate; and (5) after reaction, stopping introduction of the reductive gas and carbon source gas, and continuously introducing inert gas till the temperature is reduced to room temperature.

An EUV mirror arrangement (100) has a multiplicity of mirror elements (110, 111, 112) which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement. Each mirror element has a substrate (120) and a multilayer arrangement (130) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV), said multilayer arrangement comprising a multiplicity of layer pairs (135) having alternate layers composed of a high refractive index layer material and a low refractive index layer material. The multilayer arrangement has an active layer (140) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field. For each active layer provision is made of an electrode arrangement for generating an electric field acting on the active layer.

The invention discloses a high-performance thermoelectric device and an ultrafast fabrication method thereof. In the high-performance thermoelectric device, a segmented structure is employed to perform optimal matching of a thermoelectric material and a temperature difference environment, a blocking layer and a buffer stress layer are employed to reduce interface element migration and longitudinalcontact thermal expansion stress and improve bonding strength, a phonon scattering layer and a negative thermal expansion buffer layer are embedded to fix a thermoelectric leg so as to improve internal thermal resistance and horizontal thermal matching performance of the high-performance thermoelectric device, internal package and external package are employed to prevent the thermoelectric material from being oxidized and sublimed and improve external collision-resistant capability, the technical bottlenecks of low energy conversion efficiency, small specific power, poor thermal stability, poor collision performance, complicated fabrication process and the like of a traditional thermoelectric device are effectively broken through, meanwhile, the thermal stability and the mechanical structural performance of the high-performance thermoelectric device are improved to a great extent, long-term and excellent electrical output performance is guaranteed, and the working environment is expanded.

Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6% by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films.

The invention discloses a bonding layer material having a Re-Ni-Cr alloy diffusion barrier layer and a preparation method thereof. The Re-Ni-Cr alloy diffusion barrier layer is coated on a matrix material, wherein the matrix material is a Ni, Al, Ti, Fe or Nb-based alloy material, and the Re-Cr-Ni alloy diffusion barrier layer comprises the following elements in percentage by mass: 20-65% of Re, 30-50% of Cr and 5-30% of Ni. The preparation method comprises the step of forming the Re-Cr-Ni alloy diffusion barrier layer material on a matrix high-temperature super alloy by electroplating. The bonding layer material having a Re-Ni-Cr alloy diffusion barrier layer has smooth and uniformly distributed surface coating, can remain stable under high-temperature conditions, can prevent alloy elements in the matrix from outward diffusion and prevents oxygen in the air from inward diffusion to the alloy matrix.

The invention relates to a magnetic sandwich material based on nanometer crystal soft magnetic film and relative production, wherein said material is formed by separating two iron magnetic layers with one non-magnetic metal layer; it is characterized in that: one iron magnetic layer is nanometer crystal magnetic film while another one is multi-crystal magnetic film, whose total thickness is 10nm. The inventive material is prepared by direct-current magnetic-control splash method, with four-target splash device, and it on-site quickly anneals the material on the substrate support of four-target splash device, while the material has small interlayer couple, better magnetic resistance effect, and better thermal stability.

The invention discloses a preparation method of aluminum alloy brazing composite foil for an automotive condenser fin and belongs to the technical field of aluminum alloy calendaring. The preparation method specifically comprises the steps of preparation of Al-Mn alloy of a core layer, preparation of Al-Si alloy of a brazing cladding layer, and composite rolling according to the Al-Si/Al-Mn/Al-Si combination. According to the preparation method, the low-temperature hot rolling technique is adopted, and no grain refiner is added, so that original grains of the core Al-Mn alloy of the composite foil are made large, and a large long-strip-shaped grain structure can be formed after rolling deformation; a high-angle grain boundary exists so that the number of medium channels through which main elements of the alloy of the brazing cladding layer diffuse and penetrate towards the core alloy after welding can be reduced, and accordingly mutual diffusion of alloy elements is reduced, the strength of the composite foil after brazing is improved, and the probability of collapse of materials is lowered. Meanwhile, the heating temperature of a cast ingot is low, the heating time is short, energy consumption is reduced, and good economic benefits and social benefits are achieved.

The invention relates to a method for preparing an NdFeB/SmCo5 composite permanent magnet doped with PrCu alloy by adopting a thermal deformation method and belongs to the technical field of magnetic materials. The ratio of the weight of PrCu alloy powder for doping to the weight of total powder is 2-15 weight percent. The deformation quantity of the composite magnet is 60-90 percent. The SPS technology thermal deformation method is adopted for preparing the NdFeB/SmCo5 thermal deformation composite rare earth permanent magnet doped with the PrCu alloy; in the process of thermal deformation, as a boundary phase, a PrCu phase can isolate two hard magnetic phases, so that the mutual diffusion is reduced, an exchange coupling effect between the two phases is weakened, and the coercive force is improved; in the process of thermal deformation, after being liquefied, the PrCu phase is diffused at a crystal boundary and can also coordinate the thermal deformation of the two phases to promote the thermal deformation of the two phases; the obtained nanocrystalline NdFeB/SmCo5 composite magnet doped with the PrCu alloy has good magnetic property, thermal stability, corrosion resistance and mechanical property.

The invention belongs to a diamond film planar field emission cathode applied to plate display and its making method. It includes: a substrate, where a measuring metal electrode is deposited on one surface of the substrate and a measuring lead wire is connected with them; there is a diamond film layer on the other surface of the substrate; a metal silicide transition layer is situated between the substrate and diamond film layer. Its making method includes: firstly making a metal silicide transition layer on one surface of the substrate; then adopting various traditional methods to grow a diamond film on the metal silicide, because it is difficult in directly growing diamond film on the metal silicide, normally nucleating at bias voltage and then growing the diamond film; adopting spurting or depositing process to deposit 300-1000 nm thick Au electrode on the other surface of the substrate. The metal silicide transition layer provides two interface barriers tunneled by electron resonance, thus realizing high-density electron injection. And the making method is easy to spread.

The invention discloses a manufacturing method of a super junction device, which comprises the steps of 1, forming a gate structure, specifically, forming a gate trench, a first oxide layer and a first polycrystalline silicon layer, removing the first polycrystalline silicon layer on the side surface and the back surface of a wafer, and carrying out primary planarization to remove the first polycrystalline silicon layer on the front surface of the wafer outside the gate trench; and 2, forming a super junction in the first epitaxial layer with the flat surface on which the trench gate is formed, wherein in the forming process of the super junction, a second epitaxial layer is adopted to fill the super junction trench, and then secondary planarization is performed so as to enable the surfaceof the first epitaxial layer with the super junction to be a flat surface. According to the invention, the full-flat process can be realized, the trench gate process can be conveniently arranged before the super junction forming process, and the thermal process after the super junction is formed can be reduced, so that the mutual diffusion of impurities of the super junction is reduced, the device performance is improved, a photomask can be saved, and the process cost is reduced; and the influence of polycrystalline silicon residues on the charge balance of the super junction can be prevented.

The invention belongs to the technical field of the preparation of film solar batteries and discloses a method for preparing a CdS film used for a window layer of a solar battery. The method comprises the following steps of: 1, cleaning the surface of float glass by an ultrasonoscope and a chemical cleaning agent, and removing an oxide layer on the surface of the float glass by a hydrofluoric acid etching method; 2, putting the well cleaned float glass in deposition equipment to deposit a transparent electrode layer; 3, ultrasonically cleaning a substrate on which the transparent electrode layer is deposited by a chemical agent; and 4, putting the well cleaned substrate in growth equipment to grow the CdS film, and completing the preparation of the CdS window layer of the solar battery. The method has the advantages of improving performance of the device, using the CdS film to prepare solar batteries and other optical devices which are big in area and low in cost, reducing an impurity concentration of the CdS film and enhancing the quality of the CdS film.

The invention discloses a novel platinum-iridium-based ultrahigh-temperature multi-component alloy bonding layer capable of being used at a temperature of 1300 DEG C or above, and a preparation method thereof, and relates to the technical field of thermal barrier coatings. According to a technical scheme, the novel platinum-iridium-based ultrahigh-temperature multi-component alloy bonding layer is characterized by comprising, by mass, 6.8%-9.2% of Ir, 0.0%-21.0% of Al, 0.0%-6.0% of Cr, 0.0%-4.0% of Ru, 2.0%-4.0% of Hf, 0.0%-4.0% of Zr, 0.0%-3.0% of Ta, 0.0%-9.0% of Ni, 0.0%-5.0% of Co and 0.0%-1.0% of a rare earth element, with the balance being Pt, wherein the rare earth element is one or more selected from Y, Ce, La and Th. The novel platinum-iridium-based ultrahigh-temperature multi-component alloy bonding layer can be applied as a thermal barrier coating bonding layer for hot-end components in aerospace equipment, particularly to high-temperature components such as of blades, spray pipes, nozzles, throat liners and inner combustion chamber walls of various ultrahigh-temperature engines like aero-engines, rocket engines and large gas turbines, and can prolong the service life of the high-temperature components.

The invention relates to a steel-aluminum alloy laser welding method adopting a nickel-based high-entropy alloy intermediate layer, and belongs to the technical field of dissimilar material welding. And a nickel-based high-entropy alloy metal foil is used as a middle layer material. The high entropy effect and the high thermal resistance effect of the nickel-based high-entropy alloy metal foil control that no intermetallic compound is generated in a weld fusion area, and the intermetallic compound is only generated at the interface of the fusion area and the aluminum alloy. And by adding the nickel element and the silicon element, generation of Fe-Al intermetallic compounds at the interface is reduced, a Ni-Al-Si phase with better toughness is generated, the metallurgical reaction at the interface is improved, and then the mechanical property of the joint is improved. Laser beams A, B and C are adopted for simultaneous welding, the connecting area of the interface of the steel plate and the aluminum alloy plate is increased, and it is ensured that aluminum in the molten state fully wets and spreads the interface. The anti-shearing strength of a lap joint is improved; and meanwhile, the defects such as cracks and air holes are avoided.

The invention relates to a spot-welding electrode, in particular to a method for increasing the service life of an aluminium alloy spot-welding electrode, which is characterized by comprising the following steps of: grinding a part of an aluminium alloy plate to be welded to be contacted with the electrode and coating graphite-engine oil paint on the part, enabling the electrode to contact with the aluminium alloy plate to be welded with the movement speed of 1-100 mm/s, clamping the aluminium alloy plate to be welded between the spot-welding electrodes, carrying out spot welding by electrifying, and replacing another point to be welded after completing, thus, repeating above operations, wherein the spot-welding electrode can be ensured to have longer service life.