Type-II superlattice structure based on arsenic valve switch and preparation method

A superlattice and switching technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, nanotechnology, etc., can solve the problems of uneven composition of superlattice materials and unstable As pressure, and save the growth time of materials , the effect of reducing the probability of formation and saving stable time
CN103500765AActive Publication Date: 2014-01-08中科爱毕赛思(常州)光电科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
中科爱毕赛思(常州)光电科技有限公司
Publication Date
2014-01-08

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Abstract

The invention discloses a type-II superlattice structure based on an arsenic valve switch and a preparation method. Compared with a traditional type-II superlattice structure, the original binary compounds GaSb and InSb are respectively replaced by ternary compounds GaAsSb and InAsSb. The preparation method is characterized in that the As valve is always in an open state in the enter type-II superlattice growth process, the valve position is the same as that during the growth of an InAs layer, and the tertiary compounds GaAsSb and InAsSb are formed because partial As flows out when an GaSb layer and an InSb interface layer grown. The type-II superlattice structure based on the arsenic valve switch and the preparation method have the characteristics that since a common element As exists in all layers, the growth temperature of all layers is enabled to trend to be consistent and the mutual diffusion at the position of interfaces is reduced; under the effect of As atom surfactant, the migration rate of Sb atoms is increased, the forming probability of Sb clusters is reduced, the defects of materials are reduced and the material performance is improved.
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Description

technical field

[0001] The invention relates to a class II superlattice material, in particular to a class II superlattice structure based on an arsenic valve switch and a preparation method thereof, which is applied to mid- and long-wave infrared focal plane detectors. Background technique

[0002] The InAs / GaSb II superlattice grown on the GaSb substrate is the preferred material for the third generation of infrared focal plane detectors. In recent years, the United States, Germany, Japan and other countries are vigorously developing infrared detectors based on this II superlattice. detection technology. The InAs / GaSb heterogeneous material system has a very special energy band arrangement structure, and the forbidden band width of InAs is smaller than the valence band offset of InAs / GaSb, so the bottom of the conduction band of InAs is below the top of the valence band of GaSb, forming a type II supercrystal grid. This leads to (1) electrons and holes are separated in s...

Claims

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