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Type II superlattice structure and preparation method based on arsenic valve switch

A superlattice and switching technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, nanotechnology, etc., can solve the problems of unstable As pressure and uneven composition of superlattice materials, so as to reduce the formation probability, The effect of saving material growth time and saving stable time

Active Publication Date: 2016-01-13
中科爱毕赛思(常州)光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 4. Opening and closing the As valve will cause the As pressure to be unstable, resulting in the problem of uneven composition of the superlattice material

Method used

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  • Type II superlattice structure and preparation method based on arsenic valve switch

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Effect test

Embodiment 1

[0023] According to the content of the invention, we have prepared a type II superlattice material, the specific structure of which is:

[0024] GaAs x Sb 1-x Layer (1) has a thickness of 1.2 nm and a composition x of 0.01;

[0025] InAs y1 Sb 1-y1 Layer (2) has a thickness of 0.17 nm and a component y1 of 0.1;

[0026] The thickness of the InAs layer (3) is 2.4nm;

[0027] InAs y2 Sb 1-y2 Layer (4) has a thickness of 0.17 nm and a composition y2 of 0.65.

Embodiment 2

[0029] According to the content of the invention, we have prepared the second type II superlattice material, and its specific structure is:

[0030] GaAs x Sb 1-x Layer (1) has a thickness of 2.1 nm and a composition x of 0.015;

[0031] InAs y1 Sb 1-y1 Layer (2) has a thickness of 0.21 nm and a component y1 of 0.13;

[0032] The thickness of the InAs layer (3) is 3.6nm;

[0033] InAs y2 Sb 1-y2 Layer (4) has a thickness of 0.21 nm and a composition y2 of 0.85.

Embodiment 3

[0035] According to the content of the invention, we have prepared the third type II superlattice material, the specific structure of which is:

[0036] GaAs x Sb 1-x Layer (1) has a thickness of 1.8 nm and a composition x of 0.02;

[0037] InAs y1 Sb 1-y1 Layer (2) has a thickness of 0.23 nm and a component y1 of 0.25;

[0038] The thickness of the InAs layer (3) is 4.8nm;

[0039] InAs y2 Sb 1-y2 Layer (4) has a thickness of 0.23 nm and a composition y2 of 0.9.

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Abstract

The invention discloses a type-II superlattice structure based on an arsenic valve switch and a preparation method. Compared with a traditional type-II superlattice structure, the original binary compounds GaSb and InSb are respectively replaced by ternary compounds GaAsSb and InAsSb. The preparation method is characterized in that the As valve is always in an open state in the enter type-II superlattice growth process, the valve position is the same as that during the growth of an InAs layer, and the tertiary compounds GaAsSb and InAsSb are formed because partial As flows out when an GaSb layer and an InSb interface layer grown. The type-II superlattice structure based on the arsenic valve switch and the preparation method have the characteristics that since a common element As exists in all layers, the growth temperature of all layers is enabled to trend to be consistent and the mutual diffusion at the position of interfaces is reduced; under the effect of As atom surfactant, the migration rate of Sb atoms is increased, the forming probability of Sb clusters is reduced, the defects of materials are reduced and the material performance is improved.

Description

technical field [0001] The invention relates to a class II superlattice material, in particular to a class II superlattice structure based on an arsenic valve switch and a preparation method thereof, which is applied to mid- and long-wave infrared focal plane detectors. Background technique [0002] The InAs / GaSb II superlattice grown on the GaSb substrate is the preferred material for the third generation of infrared focal plane detectors. In recent years, the United States, Germany, Japan and other countries are vigorously developing infrared detection based on the II superlattice. technology. The InAs / GaSb heterogeneous material system has a very special energy band arrangement structure, and the forbidden band width of InAs is smaller than the valence band offset of InAs / GaSb, so the bottom of the conduction band of InAs is below the top of the valence band of GaSb, forming a type II supercrystal grid. This leads to (1) electrons and holes are separated in space, elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/18
CPCB82Y20/00H01L31/035236H01L31/0735H01L31/1844Y02E10/544Y02P70/50
Inventor 陈建新王芳芳徐志成周易徐庆庆
Owner 中科爱毕赛思(常州)光电科技有限公司
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