Method for preparing CdS film used for window layer of solar battery

A solar cell and window layer technology, which is applied in the manufacture of circuits, electrical components, and final products. It can solve the problems of CdS thin films that cannot be deposited, that the films are not strong enough, and that the films are not uniform enough, so as to reduce the impurity concentration, prevent falling off, and reduce mutual The effect of diffusion

Inactive Publication Date: 2010-06-16
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, people have developed some preparation methods of CdS thin film, such as: chemical water bath deposition method, the thin film grown by this process is not strong enough, it is easy to fall off under the influence of external environment
Another method such as: near-space sublimation method, but the film grown by this method is not uniform enough, which affects the light transmittance
Moreover, when the substrate temperature is lower or higher than a certain value, the CdS film cannot be deposited, which is greatly affected by the sinking.

Method used

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  • Method for preparing CdS film used for window layer of solar battery
  • Method for preparing CdS film used for window layer of solar battery
  • Method for preparing CdS film used for window layer of solar battery

Examples

Experimental program
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Effect test

Embodiment 1

[0040] The specific steps of growing a CdS film after depositing a transparent electrode ITO on a glass substrate are as follows (in conjunction with referring to figure 2 ):

[0041] After immersing the glass substrate in chemical detergent, clean the surface of the substrate with an ultrasonic cleaning device, and remove inorganic substances and oxides on the surface with nitric acid, sulfuric acid, hydrogen peroxide and hydrochloric acid;

[0042] Slowly place the cleaned glass substrate on the substrate stage of the magnetron sputtering equipment and fix it, and grow a 500nm ITO transparent electrode layer. During sputtering, the substrate temperature is 300°C and the gas pressure is 3×10 -3 Pa;

[0043] After the deposited ITO substrate was ultrasonically cleaned with a chemical detergent, it was slowly placed on the substrate stage of the sputtering equipment, fixed and stable, and then the CdS film was grown. The magnetron sputtering equipment for growth includes ra...

Embodiment 2

[0048] Deposition of transparent electrode SnO on glass substrate 2 : The specific steps of growing CdS film after F are as follows (in conjunction with reference figure 2 ):

[0049] After immersing the glass substrate in chemical detergent, clean the surface of the substrate with an ultrasonic cleaning device, and remove inorganic substances and oxides on the surface with nitric acid, sulfuric acid, hydrogen peroxide and hydrochloric acid;

[0050] Slowly put the cleaned glass substrate into the CVD equipment and fix it, grow a layer of 500nm SnO 2 : F transparent electrode layer.

[0051] Will deposit good SnO 2 After the substrate of :F is ultrasonically cleaned with a chemical lotion, it is slowly placed on the substrate stage of the sputtering equipment, and then the CdS thin film is grown after being fixed and stable. The magnetron sputtering equipment for growth includes radio frequency power supply, reaction chamber, rotatable substrate stage, target stage for pl...

Embodiment 3

[0056] The specific steps of growing a CdS film after depositing a transparent electrode ITO on a glass substrate are as follows (in conjunction with referring to figure 2 ):

[0057] After immersing the glass substrate in chemical detergent, clean the surface of the substrate with an ultrasonic cleaning device, and remove inorganic substances and oxides on the surface with nitric acid, sulfuric acid, hydrogen peroxide and hydrochloric acid;

[0058] Slowly place the cleaned glass substrate on the substrate stage of the magnetron sputtering equipment and fix it, and grow a 400nm ITO transparent electrode layer. During sputtering, the substrate temperature is 400°C and the gas pressure is 3×10 -3 Pa;

[0059] After the deposited ITO substrate was ultrasonically cleaned with a chemical detergent, it was slowly placed on the substrate stage of the sputtering equipment, fixed and stable, and then the CdS film was grown. The magnetron sputtering equipment for growth includes ra...

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Abstract

The invention belongs to the technical field of the preparation of film solar batteries and discloses a method for preparing a CdS film used for a window layer of a solar battery. The method comprises the following steps of: 1, cleaning the surface of float glass by an ultrasonoscope and a chemical cleaning agent, and removing an oxide layer on the surface of the float glass by a hydrofluoric acid etching method; 2, putting the well cleaned float glass in deposition equipment to deposit a transparent electrode layer; 3, ultrasonically cleaning a substrate on which the transparent electrode layer is deposited by a chemical agent; and 4, putting the well cleaned substrate in growth equipment to grow the CdS film, and completing the preparation of the CdS window layer of the solar battery. The method has the advantages of improving performance of the device, using the CdS film to prepare solar batteries and other optical devices which are big in area and low in cost, reducing an impurity concentration of the CdS film and enhancing the quality of the CdS film.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cell preparation, in particular to a method for preparing a CdS thin film used for a solar cell window layer, especially for CdS / CdTe and CdS / CIGS structured solar cells. Background technique [0002] In recent years, the increasingly severe international energy shortage and environmental pollution have brought great opportunities for various new energy technologies. With its inexhaustible and zero-pollution characteristics, solar cells stand out among all kinds of new energy technologies, and have developed rapidly. At present, thin-film solar cells have become the mainstream of the development trend. Among thin-film solar cells, the theoretical conversion rate of CdTe thin-film cells is as high as 28%, and the production cost is low, which has attracted widespread attention in the industry. [0003] At present, the actual conversion efficiency of industrially produced solar cells is gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 李京波朱峰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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