Anti-fingerprint film, glass product and preparation method of glass product
An anti-fingerprint film and glass product technology, applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problem of weakened bonding strength between film and glass substrate, low friction resistance of anti-fingerprint film, The film layer is separated from the substrate and other problems, so as to achieve the effect of eliminating the problem of charge accumulation, long bonding strength and simple process
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[0063]Preparation method of the glass article, including:
[0064]The conductive film layer, the transition layer, the silica layer and the anti-fingerprint film layer are sequentially prepared on the glass substrate.
[0065]In an optional embodiment, the starting vacuum of the magnetron sputter is less than or equal to 5.0E.-3PA;
[0066]In an optional embodiment, the surface of the glass substrate is performed primary ion source treatment prior to the preparation of the conductive film layer;
[0067]In an optional embodiment, the ion source operating voltage of the primary ion source is 800-1200V, current is 0.8-2.0a, and the processing time is 5-15 min;
[0068]Alternatively, the ion source operating voltage of the primary ion source can be any value between 800 V, 900V, 1000V, 1100V, 1200V, and 800-1200V; the ion source working current of the primary ion source can be 0.8A. Any value between 1.0a, 1.5a, 2.0a, and 0.8-2.0a, can have any value between 5 min, 10 min, 15min, and 5-15min;
[0069]In...
Embodiment 1
[0088]In the present embodiment, the AGC-made mobile phone front cover glass product is selected, and the first water droplet angle before the glass product is plated (see Table 1), which is measured by the two cleaning processes described in the present invention.
[0089]The cleaning glass product is placed in a vacuum coating machine to carry out the coating machine, and the specific process conditions are as follows:
[0090]1, vacuum, start vacuum 5.0e-3 PA;
[0091]2, one ion source processing: Using a linear ion source, under conditions of the argon flow of 300sccm, the oxygen flow is 70sccm, the plasma bombardment glass surface is generated at a 1000 V voltage, and the cleaning of the glass surface is achieved, and the treatment time is 600 s. The actual output current is about 1.0 A;
[0092]3, conductive film layer: tin indium alloy metal target, target power 4500 W, argon flow 300sccm, oxygen flow 20 Sccm, coating time is 120 s;
[0093]4, transition layer: silicon target power 4500 W, ...
Embodiment 2
[0101]The sample sample is prepared by Example 1, wherein the present example sample is prepared, wherein the conductive film layer has a coating time of 65 s, and the silica coating time is 500 s, and the remaining conditions are unchanged.
[0102]In this embodiment, a single layer thickness result is measured by scanning electron microscopy, wherein the electrically conductive film layer has a thickness of about 3 nm, and the transition layer has a thickness of about 3 nm, and SiO.2The layer thickness is about 8 nm, and the thickness of the finishing film is about 24.6 nm. Water drops of glass products after coating are shown in Table 1.
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