Magnetic sandwich material based on nanocrystalline soft magnetic thin film and its preparing method

A nanocrystalline soft magnetic and sandwich technology, applied in the field of information storage, can solve problems affecting data security, hindering the development of spintronic devices, and reducing the magnetoresistance effect, achieving superior flip characteristics, superior soft magnetic properties, and reducing the overall The effect of thickness

Inactive Publication Date: 2007-02-28
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

As the storage density of MRAM devices increases to Gb/in 2 , the magnetic sandwich unit is required to reach the submicron/nanoscale (100nm) in terms of length and width. Under such a small scale, the performance of the magnetic sandwich material based on the polycrystalline magnetic film undergoes profound changes: (a) interlayer magnetostatic coupling Significantly enhanced, the flip characteristics become worse, and the magnetoresistance effect is reduced [1]; (b) the magnetic

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  • Magnetic sandwich material based on nanocrystalline soft magnetic thin film and its preparing method
  • Magnetic sandwich material based on nanocrystalline soft magnetic thin film and its preparing method
  • Magnetic sandwich material based on nanocrystalline soft magnetic thin film and its preparing method

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[0047] The following will take the nanocrystalline CoNbZr / Cu / Co structure as an example to illustrate the preparation method of the magnetic sandwich material proposed by the present invention.

[0048] 1. Cleaning and handling of substrates

[0049] Prepare 10×10mm 2 Square single crystal Si(100) substrate, boiled with concentrated sulfuric acid to remove surface stains and impurities, ultrasonically cleaned with acetone, then soaked in hydrofluoric acid for 30 minutes to remove the surface oxide layer, ultrasonically cleaned with deionized water, and ultrasonically cleaned with acetone; then placed Dry on the filter paper, place on the substrate holder 7, and finally send it into the vacuum chamber of the sputtering station.

[0050] 2. Deposition and nanocrystallization of amorphous soft magnetic layer

[0051] Evacuate the sputtering table vacuum chamber to 1 × 10 -5 Pa, argon Ar is introduced as the working gas, and the partial pressure of argon is 0.2Pa. Add 50W sput...

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Abstract

The invention relates to a magnetic sandwich material based on nanometer crystal soft magnetic film and relative production, wherein said material is formed by separating two iron magnetic layers with one non-magnetic metal layer; it is characterized in that: one iron magnetic layer is nanometer crystal magnetic film while another one is multi-crystal magnetic film, whose total thickness is 10nm. The inventive material is prepared by direct-current magnetic-control splash method, with four-target splash device, and it on-site quickly anneals the material on the substrate support of four-target splash device, while the material has small interlayer couple, better magnetic resistance effect, and better thermal stability.

Description

technical field [0001] The invention belongs to the technical field of information storage, and particularly relates to the preparation technology of a novel high-performance giant magnetoresistance material used in an ultra-high-density non-volatile magnetic memory (MRAM). Background technique [0002] In spintronic devices such as giant magnetoresistive heads, nonvolatile magnetic memories, and spin transistors, magnetic information is transmitted from one end of the device to the other via mesomagnets (nanoscale magnetic units). This process requires mesoscopic magnets to "encode" magnetic information into itinerant electron spin channels and then rapidly read them out. This decoding process can be controlled by remagnetizing the mesoscopic magnet, so that the realization of the function of the spintronic device can be controlled by the change of the external magnetic field. At present, the core mesoscopic magnet component of spintronic devices is the "ferromagnetic laye...

Claims

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Application Information

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IPC IPC(8): G11C11/15G11B5/39H01F10/00
Inventor 文岐业张怀武张万里蒋向东唐晓莉彭斌
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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