High-electron-mobility transistor device and manufacture method thereof

Abstract

The invention discloses a high-electron-mobility transistor device and a manufacture method thereof. The high-electron-mobility transistor device comprises a substrate; a buffer layer arranged on the substrate; a channel layer arranged on the buffer layer and used for providing a carrier moving channel; a barrier layer arranged on the channel layer and used for providing carriers for the channel layer and blocking the carriers in the channel layer from flowing to the barrier layer; and a source electrode, a drain electrode and a grid electrode, which are arranged on the barrier layer, wherein the grid electrode is arranged between the source electrode and the drain electrode. The concentration of the carriers in the channel layer under the grid electrode is not a fixed value along the grid width direction, and is in non-monotone change. Trench etching technique or ion implantation technique are utilized to control the concentration of the carriers in the channel layer under the grid electrode to change as needed, thereby realizing planarization of a transfer transconductance curve, and achieving the purpose of improving linearity of the high-electron-mobility transistor device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high electron mobility transistor device and a manufacturing method thereof. Background technique [0002] High electron mobility transistors have become a current research hotspot due to their advantages such as large band gap, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. In the field of wireless communication, power amplifiers made of high electron mobility transistors can output higher power and achieve higher efficiency, thereby improving communication range and reducing energy consumption. [0003] At high output power, the transfer function of the high electron mobility transistor becomes nonlinear, and the output power no longer increases with the increase of the input power, which causes intermodulation distortion in the communication system. This is mainly due to the interception of high electron mobilit...

AI Technical Summary

Problems solved by technology

However, for transistors with a single-finger gate width greater than or equal to 100 μm, if the carrier concentration changes monotonously along the gate width direction, then when the transistor is working, the channel at the edge along the gate width direction bears the largest current, its temperature is the highest, and the heat is not easy emits, causing transistors to be more susceptible to failure

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