Low noise amplifier and base station radio frequency front end

A low-noise amplifier and port technology, applied in the field of radio frequency front-end, can solve the problems of alternating distortion and adjacent channel interference in the working system of the base station, and achieve the effect of improving intermodulation distortion and adjacent channel interference and high linearity.

Pending Publication Date: 2021-11-05
MAXSCEND MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The expansion of the frequency range also makes the spectrum capacity of the base station continue to expand, but this also makes the base station working system face more severe alternating distortion and adjacent channel interference

Method used

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  • Low noise amplifier and base station radio frequency front end
  • Low noise amplifier and base station radio frequency front end
  • Low noise amplifier and base station radio frequency front end

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The low noise amplifier in this embodiment specifically includes a TTD control circuit 001, an output matching circuit 002, a current control circuit 003, an input matching circuit 004, a first-stage transistor M001, a second-stage transistor M002, a feedback circuit and a harmonic suppression circuit 005. One end of the TTD control circuit 001 is connected to the control port VSD, the other end is connected to one end of the resistor R001, one end of the resistor R002, one end of the second-stage transistor M002, and one end of the harmonic suppression circuit 005, and the other end of the resistor R001 is connected to the first The second terminal of the secondary transistor M002 is connected to one terminal of the output matching circuit 002, the other terminal of the output matching circuit 002 is connected to the output port RFOUT, and the third terminal of the second-stage transistor M002 is connected to the second terminal of the harmonic suppression circuit 005 O...

Embodiment 2

[0024] Please refer to figure 1 as shown, figure 1 The structural block diagram of the low noise amplifier provided by the embodiment of the present invention.

[0025] The low noise amplifier in this embodiment specifically includes a TTD control circuit 001, an output matching circuit 002, a current control circuit 003, an input matching circuit 004, a first-stage transistor M001, a second-stage transistor M002, a feedback circuit and a harmonic suppression circuit 005. One end of the TTD control circuit 001 is connected to the control port VSD, the other end is connected to one end of the resistor R001, one end of the resistor R002, one end of the second-stage transistor M002, and one end of the harmonic suppression circuit 005, and the other end of the resistor R001 is connected to the first The second terminal of the secondary transistor M002 is connected to one terminal of the output matching circuit 002, the other terminal of the output matching circuit 002 is connecte...

Embodiment 3

[0031] Please refer to Figure 4 as shown, Figure 4 The structural block diagram of the low noise amplifier provided by the embodiment of the present invention.

[0032] The low noise amplifier in this embodiment specifically includes a TTD control circuit 001, an output matching circuit 002, a current control circuit 003, an input matching circuit 004, a first-stage transistor M001, a second-stage transistor M002, a feedback circuit and a harmonic suppression circuit 005. One end of the TTD control circuit 001 is connected to the control port VSD, the other end is connected to one end of the resistor R001, one end of the resistor R002, one end of the second-stage transistor M002, and one end of the harmonic suppression circuit 005, and the other end of the resistor R001 is connected to the first The second terminal of the secondary transistor M002 is connected to one terminal of the output matching circuit 002, the other terminal of the output matching circuit 002 is connec...

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PUM

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Abstract

The invention discloses a low noise amplifier and a base station radio frequency front end. The low noise amplifier comprises a TTD control circuit, a current control circuit, an input matching circuit, an output matching circuit, a first-stage transistor, a second-stage transistor, a feedback circuit and a harmonic suppression circuit. According to the invention, the requirements of time division multiplexing and frequency division multiplexing can be met at the same time, a wide frequency band range can be met, 2G, 3G, 4G and 5G applications can be covered, and the design difficulty and cost of the base station radio frequency front end can be reduced; meanwhile, the low noise amplifier has extremely high linearity through the harmonic suppression circuit and the current control circuit, and adjacent channel interference of the base station radio frequency front end is improved; the pHEMT process and two-stage amplification are used, so that the low noise amplifier has an extremely low noise coefficient and a relatively high gain, and the receiving sensitivity of a base station radio frequency front-end system is improved.

Description

technical field [0001] The invention relates to the field of radio frequency front ends, in particular to a low noise amplifier and a base station radio frequency front end. Background technique [0002] With the rapid development of wireless communication technology, the operating frequency of the base station has changed from the initial 2G (800-900MHz), 3G (1900-2200MHz), 4G (2300-2700MHz), to the rapid development of 5G (3300-4200MHz), the frequency The scope is getting wider and wider. The expansion of the frequency range also makes the spectrum capacity of the base station continue to expand, but this also makes the base station working system face more severe alternating distortion and adjacent channel interference. At the same time, the surrounding environment of the base station is complex, and the signal requires a wide range of coverage. Therefore, the radio frequency front end of the base station must also have a high receiving sensitivity, and the low noise amp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04B1/10H04B1/18H04B1/40H04W88/08H03F1/26H03F1/56H03F3/19
CPCH04B1/10H04B1/18H04B1/40H04W88/08H03F1/26H03F1/56H03F3/19H03F2200/294H03F2200/451
Inventor 余超魏越张俊波唐壮
Owner MAXSCEND MICROELECTRONICS CO LTD
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