Multilayer copper interconnection manufacturing method

A manufacturing method and copper interconnection technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as inability to use plasma, many technical processes, and complicated processes

Inactive Publication Date: 2011-09-14
CHANGZHOU UNIV
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Problems solved by technology

[0003] Since the chloride produced by copper metal in the etching process is not volatile, it is impossible to use plasma etching to prepare graphics. The Dual Damascene (Dual Damascene) process invented by IBM solves this problem ingeniously. In the dual Damascene process, Firstly, the oxide dielectric layer is etched to generate a trench for the damascene process, followed by deposition of a metal barrier layer and a copper seed layer, and then the trench is filled with copper through the ECP electroplating process, and finally, Cu chemical mechanical polishing ( CMP) process to achieve copper planarization. Copper interconnect chemical mechanical polishing is currently the only practical technology and core technology that can achieve global planarization of chips. This technology has many processes and complex processes.

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  • Multilayer copper interconnection manufacturing method
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example 1

[0017] 1. Deposit copper nitride on the silicon wafer by sputtering method;

[0018] On the silicon wafer, copper nitride is deposited by sputtering. The sputtering target adopts pure copper target (99.999%), and the background vacuum is 1.0×10 -4 Pa, substrate temperature 150 o C, the working gas is high-purity nitrogen (99.999%), the gas flow rate is controlled at 30 sccm, the working pressure is controlled at about 1Pa, and copper nitride with a thickness of 100 nanometers is deposited.

[0019] 2. Use femtosecond laser to position and heat the required area to decompose copper nitride into copper;

[0020] The specific parameters of the femtosecond laser incident on the copper nitride film are: wavelength 200 nm, pulse width 25 femtoseconds, pulse energy 0.5 mJ, repetition rate 1000 Hz;

[0021] Adjust the height of the sample stage so that the femtosecond laser is focused on the surface of the copper nitride film, and the sample stage moves horizontally at a speed of 0...

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Abstract

The invention relates to a copper interconnection manufacturing method belonging to the field of micro-nano manufacture. The method utilizes the sputtering or atomic layer deposition technology to prepare a copper nitride film, and utilizes a femtosecond laser writing technology to form copper elementary substance at the area needing metal interconnection by using laser decomposition, thus realizing copper interconnection by one step; and since the metal copper is formed by conducting laser thermal decomposition on the plane of the copper nitride, additional chemical polishing is not needed to realize surface planarization.

Description

technical field [0001] The invention relates to a copper interconnection manufacturing method, which belongs to the field of micro-nano manufacturing. Background technique [0002] In the field of microelectronics, as the feature size of integrated circuit devices continues to shrink, in order to improve the reliability and service life of devices, the metal interconnection of chips is transferred from aluminum interconnection to copper interconnection. Multilayer interconnection technology has become VLSI and ultra-large-scale An important part of the integrated circuit (ULSI) manufacturing process; multi-layer interconnection structure, mainly including local interconnection, metal interconnection and interconnection between upper and lower metal lines, etc., and insulating medium is required between metal interconnections For isolation, the insulating layer is called interlayer dielectric (ILD), and it is also the physical support of the upper metal line. The requirement ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 丁建宁袁宁一
Owner CHANGZHOU UNIV
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