A plasma activated doping device

Abstract

The invention discloses a plasma activation doping device, which realizes doping of semiconducting materials or devices under a 0-300 DEG C non-high temperature. The plasma activation doping device comprises a vacuum cavity and a plasma generation unit. A plasma coupling window is arranged on the bottom surface, and an impurity source bench is arranged on the plasma coupling window; a doped semiconductor bench is arranged on the top portion of the cavity; the bench surfaces of the doped semiconductor bench and the impurity source bench are covering semiconductor wafers in the same material with a doped semiconductor wafer; a metal liner is arranged close to the inner wall of the vacuum cavity; the metal liner is insulated from the cavity wall, and a positive bias voltage, which is smallerthan or equal to 200 V, is applied to the metal liner; and the temperature of the doped semiconductor bench is controlled within the range of 0-300 DEG C. The device can carry out doping on the semiconductor material or device under the non-high temperature condition, so that high-temperature processing and high-energy particle bombardment are not involved, damage is little, process is simple, time is short, efficiency is high, pollution can be eliminated or greatly reduced, and one-time completion of doping of a plurality of impurities is realized.

Description

technical field [0001] The invention relates to semiconductor doping technology, in particular to a device for doping semiconductor materials or devices at a non-high temperature of 0-300°C by using plasma to activate impurity diffusion. Background technique [0002] The doping process is to add a controllable amount of required impurities into a specific area near the surface of a semiconductor material or device, thereby changing the physical and chemical properties of the semiconductor material or device. The semiconductor can be an inorganic semiconductor, an organic semiconductor or an organic-inorganic hybrid semiconductor. Using the doping process, the source and drain regions of PN junctions and field effect transistors can be made, and the ohmic contact between metals and semiconductors can also be greatly improved. There are two main types of impurities doped into semiconductors: the first type is shallow acceptor impurities or donor impurities that can determine ...

AI Technical Summary

Problems solved by technology

These ions or atoms that we do not want to be doped are not only of various types, but also may far exceed the required doping ions or atoms in quantity, not only failing to achieve the original doping purpose, but also causing serious contamination of the semiconductor sample.

2. There is only one plasma source and one sample stage in general plasma equipment

A single sample stage cannot meet the requirements of separately controlling the plasma bombardment intensity of solid dopant source and doped semiconductor

3. There is generally no temperature control on the sample stage where the doped semiconductor is placed, and the temperature of the doped semiconductor sample will generally increase with the continuation of the doping process, so the guarantee of non-high temperature doping may be destroyed

At the same time, it is impossible to adjust the doping depth by changing the sample temperature in the allowable temperature range (for example, 0-300 °C).

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