31results about How to "Add equivalent capacitance" patented technology

The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a main surface of a semiconductor substrate, the main surface of the semiconductor substrate is heat-treated in a non-oxidation atmosphere. Next, an oxygen supplying layer made of hafnium oxide deposited by ALD and having a thickness smaller than that of the high dielectric layer is formed on the high dielectric layer, and a cap layer made of tantalum nitride is formed. Thereafter, the main surface of the semiconductor substrate is heat-treated.

The invention relates to a self-illumination display pixel. The self-illumination display pixel comprises a self-illumination circuit; the self-illumination circuit comprises a self-illumination device; the self-illumination display pixel further comprises an optical fingerprint sensing circuit; the optical fingerprint sensing circuit comprises a first TFT device and a photosensitive device; and a channel layer of the first TFT device is just below the photosensitive device. By means of the self-illumination display pixel, a fingerprint sensing function can be realized; and furthermore, the integral structure is optimized.

An ESD protection circuit with leakage current reduction function includes a silicon controlled rectifier, a first CMOS inverter, a first transistor, a current mirror, a PMOS capacitor and a resistor. The first CMOS inverter electrically connects with the silicon controlled rectifier. The first transistor comprises a first end, a second end and a third end, wherein the first end electrically connects with the silicon controlled rectifier and the first CMOS inverter, and the current mirror electrically connects with the third end of the first transistor. The PMOS capacitor electrically connects with the current mirror, and the resistor electrically connects with the first CMOS inverter, the second end of the first transistor and the PMOS capacitor.

A pixel which may prevent the voltage of a floating diffusion region of the pixel from being outside a desired or predetermined driving voltage range by adjusting the equivalent capacitance of the floating diffusion region may be provided. The pixel may include a photodiode which may convert light energy into photocarriers, a transfer transistor which may transfer the photocarriers accumulated in the photodiode to a floating diffusion region, a select transistor which may transmit a data signal to the exterior in response to a selection control signal, the transmitted data signal having a voltage which may vary according to the voltage of the floating diffusion region, and/or at least one capacitor which may be connected between the floating diffusion region and the select transistor and which may adjust the equivalent capacitance of the floating diffusion region.

The invention provides a frequency selection surface with miniaturized low frequency number ratio, which mainly solves the technical problems that two resonant frequency points in low frequency band are far away from each other and the electric size of a unit is large on the existing dual-band frequency selection surface. The frequency selection surface comprises a dielectric plate (2),a metal patch (1) printed on an upper surface of the dielectric board and a metal patch (3) printed on a lower surface of the dielectric board,a metal through hole (4) and a metal connecting wire (5) connectingadjacent units, Each metal patch consists of four metal strips arranged on the surface of the dielectric plate. The first two metal strips form two resonant points of TE polarization and the second two metal strips form two resonant points of TM polarization. The four metal strips of the upper and lower metal patches are connected through metal vias to prolong the current path. The invention realizes good miniaturization effect while possessing low-frequency digital ratio characteristics, and can maintain stable performance for different polarization and angles, and can be applied to antenna sub-reflector of communication system and small communication equipment.

The invention discloses a simple electric field induction energy-taking power supply, and the power supply comprises an energy-taking module, a rectification energy storage module, a discharge controlmodule and a voltage stabilization module which are cascaded in sequence; the energy-taking module generates a space displacement current through equivalent capacitance between the metal induction polar plate and the high-voltage wire, and obtains electric field energy from a space electric field; the rectification energy storage module rectifies the obtained spatial displacement current into a direct current to charge an energy storage capacitor; the discharge control module performs on-off control on energy storage and release of the energy storage capacitor, and releases the energy when voltage at two ends of the energy storage capacitor reaches a discharge conduction threshold value; when the energy storage voltage is reduced to a discharge cut-off threshold value, only energy is stored; and the voltage stabilization module stabilizes the discharge voltage of the energy storage capacitor and supplies the stabilized voltage to a load. The simple electric field induction energy-taking power supply provided by the invention does not need to supply energy to a load after impedance conversion of a transformer, has the advantages of simple and convenient power supply circuit, easiness in implementation, small size and the like, and provides a new way for a working power supply of an online monitoring device of a power transmission line.

The invention discloses a phase compensation controller, which comprises a first gain stage, a second gain stage, a second capacitor coupled between the second gain stage output end and the ground, a buffer stage, a resistor Rz, a fourth gain stage and a resistor R1 at the normal phase input end of one gain stage, wherein the first gain stage and the second gain stage are connected in series, and the buffer stage, the resistor Rz and the fourth gain stage form a feedback loop together with the first gain stage. The fourth gain stage further comprises a first capacitor, a first current amplifier and a second current amplifier which are in couple connection with the input end, and the first current amplifier is used for amplifying current Ic passing through the first capacitor by K times to obtain current Ic'. The second current amplifier is used for amplifying the current Ic passing through the first capacitor by K times to obtain current Ic''. The phase compensation controller greatly decreases the achieving area and saves the cost of integrated chips.

The invention discloses a method for manufacturing a gate insulation layer. The method comprises successively depositing a silicon nitride layer and a silicon oxide layer on a gate according to a chemical vapor deposition method, thereby obtaining the silicon nitride layer and the gate insulation layer which is successively stacked on the gate insulation layer, wherein the gate is a Cu gate. The method for manufacturing the gate insulation layer has functions of effectively protecting the Cu gate and an active semiconductor layer, effectively isolating oxygen by the deposited silicon nitride layer for preventing oxidation of Cu, and effectively isolating hydrogen by the deposited silicon oxide layer for preventing reduction of the active semiconductor layer. Furthermore the gate insulation layer with the silicon nitride/silicon oxide stacked structure has functions of effectively blocking alkali metal ions in a glass substrate, improving antistatic discharging capability, reducing leakage current, and improving an equivalent capacitance.

The invention provides a dynamic register, a data operation unit, a chip, a computing power board and a computing device. The dynamic register comprises an input end, an output end, a clock signal end, a switch unit, a latch unit and an output driving unit, wherein the switch unit, the latch unit and the output driving unit are sequentially connected between the input end and the output end in series, a first node is arranged between the switch unit and the latch unit, and a second node is arranged between the latch unit and the output driving unit. The dynamic register further comprises an electric leakage compensation unit, and the electric leakage compensation unit is electrically connected among the first node, the second node and the output end. According to the present invention, theequivalent capacitance of the nodes can be increased, the dynamic leakage current of the nodes is compensated, and the safety and accuracy of the data are improved.

The invention relates to controlling a device for converting charge into voltage comprising an amplifier and at least one capacitor mounted in inverse feedback between an input and an output of said amplifier, whereby said amplifier can be connected between at least one input stage, to receive a charge therefrom, and at least one output stage to deliver voltage thereto, said voltage being representative of the charge received at the input, said method comprising at least one phase comprising the voltage conversion of a charge received at the input. According to the invention the conversion phase comprises at least: one first sub-phase during which the amplifier is connected to the input stage and the amplifier is disconnected from the output stage; followed, by a second sub-phase during which the amplifier is disconnected from the input stage and the amplifier is connected to the output stage.

The application discloses a resonator and a cavity filter. The resonator is characterized in that an upper end is provided with a loading portion 1, a central portion is provided with a through hole 2, and a lower end is provided with a fixing hole 3; the loading portion 1 consists of a plurality of curved geometric structures; and the geometric center position of the loading portion 1 is hollowed, with the hollowed radius being the same as the radius of the through hole 2. By arranging the resonator that includes the loading portion 1 of the curved geometric structures and is provided with the through hole 2 and the fixing hole 3 to the cavity filter through the fixing hole 3, the invention increases the equivalent capacitance between the resonator and a cavity, reduces the cavity resonance frequency and the maximum field strength of a link, increases the cavity stored energy of the cavity filter, and achieves the purpose of increasing the cavity power capacity.

A compact coupling miniaturized metamaterial structure provided by the invention comprises a dielectric substrate, a printed metal layer is arranged on the end face of one side of the dielectric substrate, a cross-shaped metal frame is arranged on the end face of the other side of the dielectric substrate, and a coupling capacitor layer is further arranged in the dielectric substrate in an embedded mode. According to the compact coupling miniaturized metamaterial structure, the inductance structure is formed by utilizing the metal frame with the cross-shaped structure, and a capacitor structure connected in parallel is formed by utilizing the interaction between the embedded coupling capacitor layer in the dielectric substrate and the printing metal layer, so that the larger equivalent capacitance is generated, the structural size of the metamaterial is reduced, and the miniaturization of the metamaterial is realized.

The invention discloses an adjustable electromagnetic shielding cover and a radio frequency circuit optimization method. The electromagnetic shielding cover comprises a metal shielding cover and a circuit structure arranged therein, and tuning screws are arranged at sensitive positions of a cavity effect in the metal shielding cover. According to the method, through establishing a cavity model, an influence exerted by a shielding cover cavity on a microwave and radio frequency circuit is analyzed; the specially optimized tuning screws are additionally arranged on the shielding cover of the microwave and radio frequency circuit, slits between the tuning screws and the circuit are adjusted, and an equivalent circuit of a cavity between the circuit and the shielding cover is changed; and the adjustable electromagnetic shielding cover can obviously inhibit cavity resonance, adjusts the cavity effect and improves performance of the circuit.

The invention discloses an MOM capacitor which is formed by a plurality of layers of metal coils. Each layer of metal coil is formed by nesting two metal sub-coils. The two metal sub-coils of each layer of metal coil form a transverse capacitor structure, that is, the two metal sub-coils form two pole plates of the capacitor; and two metal sub-coils at the upper and lower adjacent two sides are connected together through a through hole. The two pole plates of the MOM capacitor are respectively formed by the metal coils; and since the metal coils have relatively-large parasitic inductance, equivalent capacitance of the MOM capacitor can be improved, capacitance density is increased and circuit area is reduced.

The invention relates to a microwave technology, in particular to an SIW (substrate integrated waveguide) transmission line capable of loading direct-current electric field bias. On the basis of the substrate integrated waveguide, a metal through hole structure is changed into a blocking structure, a row of inverted and identical blocking structures are additionally arranged to reduce radiation loss, and equivalent capacitance is increased to enable the substrate integrated waveguide to approach transmission performance of a traditional SIW transmission line. The electric schematic diagram of the blocking structure is equivalent to periodically loading a shunt capacitor on the basis of the traditional SIW, so that the capacitance value needs to be increased as much as possible on the premise of meeting the size requirement, namely, the spacing is reduced and the capacitance area is increased. Compared with a single-row structure, the double-row structure has the advantages that radiation loss is reduced, equivalently, a shunt capacitor is additionally arranged, the capacitance value is further increased, and the performance of the whole blocking transmission line is close to that of an SIW (substrate integrated waveguide) transmission line. According to the invention, the function of loading a direct-current bias electric field is met, but the loss is far lower than that of the existing strip line and coplanar waveguide structure.

The embodiment of the invention provides a charging capacitor and a pump circuit. The charging capacitor is applied to a pump circuit of a memory; the first end of the charging capacitor is a leading-out end of a floating gate control electrode in a floating gate MOS transistor inside the memory; the second end of the charging capacitor is a common end after a P-well contact point in the floating gate MOS transistor, a source electrode and a control gate electrode; and the power supply end of the charging capacitor is a leading-out end of an N well in the floating gate MOS transistor. The charging capacitor in the embodiment of the invention can resist high voltage, the equivalent capacitance per unit area is large, and quick and high-efficiency charging can be realized.