30results about How to "Small equivalent capacitance" patented technology

The present invention proposes an ESD protection circuit with low input capacitance, suitable for an I/O pad. The ESD protection circuit includes a plurality of diodes and a power-rail ESD clamp circuit between power lines. The diodes are stacked and coupled between a first power line and the I/O pad. The ESD protection circuit between power lines is coupled between the first power line and a second power line. During normal operation, the diodes are reverse-biased and the ESD protection circuit between power lines is turned off. When an ESD event between the power line and the I/O pad occurs, the diodes are forward-biased, and the ESD protection circuit between power lines is turned on to conduct ESD current. The equivalent input capacitance of the ESD protection circuit of the present invention is very small, making it particularly suitable for the I/O port of high-frequency or high-speed IC.

The invention provides an input and output circuit with small area, wherein, one or a plurality of parallelly connected circuit units and a static discharge protection circuit are arranged between a core circuit/a pre-driver and an input and output pad. An ex-core drive circuit and a resistance of an output end are arranged in each circuit unit, wherein, the static discharge protection circuit can avoid static discharge incidents on the input and output pad, and the resistance in each circuit unit realizes the static discharge barrier function so as to prevent static discharge current from entering corresponding drive circuits, thus leading transistors in the drive circuits not to be subjected to design rules of static discharge and realizing single finger layout to reduce the equivalent capacitance of the drive circuits. Therefore, the total areas of the drive circuits and the whole input and output circuit can be effectively reduced so as to realize the input and output circuit with small area.

The invention discloses a graphene photonic crystal terahertz amplifier and a regulating and control method thereof. Due to the characteristics that the conductivity of graphene at specific temperature and bias voltage is a negative value in a terahertz wave band, the graphene can be used as a terahertz wave gain medium, and the function of the terahertz amplifier can be achieved by using a periodic 'graphene-single crystal silicon layer' one-dimensional photonic crystal structure. According to the graphene photonic crystal terahertz amplifier, different bias voltages can be applied by alternatively introducing positive and negative electrodes to the graphene which is periodically arranged, and active regulation and control on terahertz wave amplification and working frequency are achieved. As the one-dimensional photonic crystal structure is combined with the terahertz gain characteristics of the graphene, due to the cascade connection of a plurality of pieces of graphene, and the photonic band gap, the slow light enhancement, the F-P effect and the mode competitive effect of the one-dimensional photonic crystal structure, the gain amplification coefficient and the Q-value of the terahertz waves in a single transmission mode can be effectively increased, and the single-frequency terahertz wave output with the high gain and high Q-value is achieved. The graphene photonic crystal terahertz amplifier works in a frequency band of 1-2THz, the working frequency can be tuned according to working voltage, the maximum output gain is greater than 30dB, the Q-value is greater than 50, and the graphene photonic crystal terahertz amplifier is a large-format high-performance terahertz amplifier.

The invention provides a multi-spectral camera device. The multi-spectral camera device comprises a laminated hybrid semiconductor device, wherein the laminated hybrid semiconductor device is used for performing channel separation on different wave bands in a three-dimensional space and comprises a first photoelectric diode and a second photoelectric diode, the first photoelectric diode is used for photoelectrically converting near-infrared light, the first photoelectric diode forms an infrared image detection array and comprises a substrate and an electron and/or hole depletion layer, the electron and/or hole depletion layer is formed in the substrate, the second photoelectric diode is arranged on the first photoelectric diode and is used for photoelectrically converting visible light, and the second photoelectric diode forms a visible light image detection array. With the multi-spectral camera device provided by the invention, the interference between the different photoelectric diodes is reduced or prevented, the integral performance is improved.

The invention relates to a capacitive patch loaded dual-mode substrate integrated waveguide band-pass filter, which comprises a first layer metal plate, a first layer dielectric plate, a second layermetal plate, a second layer dielectric plate and a third layer metal plate which are arranged in sequence from top to bottom and are fixedly connected in sequence, wherein a microstrip-to-coplanar waveguide feed line structure is arranged on the surface of the first layer metal plate, the second layer metal plate comprises four capacitive patches, the third layer metal plate is an all-metal-covered ground, and a metallized blind hole is formed in the second layer dielectric plate. The top end of the metallized blind hole is fixedly connected with the bottom end of the capacitive patch, the bottom end of the metallized blind hole is fixedly connected with the top end of the all-metal covered ground, metal through holes which are communicated with each other are formed in the first layer dielectric plate and the second layer dielectric plate, and the metal through holes are communicated with the first layer metal plate and the third layer metal plate. The waveguide band-pass filter has the characteristics of more miniaturization and capability of realizing high selectivity.

The present invention provides a radio frequency coplanar waveguide element based on a silicon base on an insulator and a preparation method thereof. The method comprises: 1) preparing the silicon base on an insulator, wherein the silicon base on the insulator includes a ground floor silicon, an insulating layer and a top silicon which are stacked in order, and the lower portion of the insulating layer is provided with at least one groove of the ground floor silicon corresponding to the position of the preparation of the radio frequency coplanar waveguide element; 2) defining a device area, removing the top chain of the device area, and exposing the upper surface of the insulating layer at the lower portion of the device area; and 3) preparing the radio frequency coplanar waveguide element. Based on the silicon base on the graphical insulator, the radio frequency coplanar waveguide element based on the silicon base on the insulator and the preparation method thereof obtain the coplanar waveguide with a substrate cavity through later period etching, the air medium in the cavity structure allows the equivalent capacitance of the substrate to be reduced and allow the equivalent resistance to be increased so as to eliminate fixed charge and movable charge in the SiO2 and the unfavorable factors, influencing microwave transmission, such as Si/SiO2 system interface state, trap charge and the like, and therefore the medium loss is reduced, and the transmission performance of the coplanar waveguide is improved.

The invention discloses a self-neutralization device of an ionic liquid thruster, which is realized through control of a feedback circuit, and the feedback circuit is composed of a high-voltage isolation circuit, a sampling circuit, a control circuit, an electricity storage capacitor, an isolation resistor and the like. Accumulated charges are limited to a thruster and a high-voltage output end through the high-voltage isolation circuit, the charges are captured through the electricity storage capacitor and converted into voltage signals at the two ends of the capacitor, and the sampling circuit measures capacitor voltage through a voltage dividing method and transmits the capacitor voltage to the control circuit. The high-voltage isolation circuit changes the voltage value or the duty ratio of an output signal under the adjustment of the control circuit, so that the emission proportion of positive and negative ions of the thruster beam is changed, and the originally accumulated charge quantity is balanced. According to the device, the positive and negative ion emission proportion of the ionic liquid thruster can be autonomously balanced, self-neutralization work of the thruster can be maintained, the problem that a spacecraft is electrified due to charge accumulation is prevented, ionic liquid electrochemical reaction caused by charge imbalance is avoided, and the service life of the ionic liquid thruster is remarkably prolonged.

The invention discloses a plasma ozone generating device, which belongs to the technical field of environmental protection. A plasma ozone generating device comprises a discharge electrode assembly and a tubular insulator; a dielectric barrier discharge gap is formed between adjacent discharge electrode assemblies; the discharge electrode assembly and the tubular insulator are placed coaxially to form a dielectric barrier discharge gap array. The invention has low capacitance, can adopt a higher frequency high-voltage power supply, and has higher efficiency and better reliability under the same power consumption condition. It can be combined with a high-frequency high-voltage power supply to form a unit module. It can be used alone, in series or in parallel. The modular design can be used in any combination to produce any ozone concentration and any ozone output. The product volume Shrink significantly. It can be widely used in waste gas treatment and other environmental protection technical fields.

The invention relates to a power supply management circuit with an automatic on-off switched capacitor network, and belongs to the field of power supply management circuits. The power supply management circuit comprises a rectification circuit, a switch capacitor network circuit, an auxiliary power supply and MOSFET control circuit, and a DC-DC buck voltage stabilization output circuit. The rectification circuit is a bridge type full-wave rectification circuit composed of four Schottky barrier diodes; the switch capacitor network circuit comprises a series charging loop composed of a high-withstand-voltage small-capacitance electrolytic capacitor and a low-forward-breakover-voltage high-reverse-breakdown-voltage diode, and the N-channel enhanced MOSFETs are connected with a parallel discharging loop composed of the positive electrode and the negative electrode of the electrolytic capacitor respectively. The method can be applied to the field of micro-power energy collection, the capacitor charging time is greatly shortened, and the energy utilization efficiency is improved.

The present invention discloses an artificial magnetic conductor unit, an artificial magnetic conductor structure and a planar antenna. The artificial magnetic conductor unit comprises a metal periodic patch, a metal via hole, a metal ground plate and a dielectric substrate, wherein the metal periodic patch consists of a square patch with a hollowed center and a spiral line, the spiral line is arranged at the hollowed center part of the square patch and is connected with the square patch, the spiral line is connected with the metal ground plate through the metal via hole, and the metal periodic patch is etched on the dielectric substrate. The artificial magnetic conductor structure comprises the plurality of artificial magnetic conductor units which are distributed periodically, and the planar antenna comprises an antenna oscillator and the artificial magnetic conductor structure arranged below the antenna oscillator. As the artificial magnetic conductor structure is used as a planar base station antenna reflecting plate, the height of the antenna can be reduced to 1/3 of the original height of the antenna, and the artificial magnetic conductor structure is simultaneously adapted to a plurality of polarized antennas, thus wide application range is achieved.

The invention discloses a groove power semiconductor element and manufacture method thereof. A gate structure of the groove power semiconductor element includes a gate insulation layer, a lamination layer and a gate. The gate insulation layer covers the inner wall face of a groove. The lamination layer covers the lower half part of the gate insulation layer. The gate is disposed in the groove andis isolated from the lamination layer and an epitaxial layer through the gate insulation layer. The gate includes a lower doping zone surrounded by the lamination layer and an upper doping zone disposed on the lamination layer and the doping zone. A PN interface is formed between the upper doping zone and the lower doping zone. The impurity concentration in the upper doping zone decreases gradually from the outer periphery of the upper doping zone towards the inner part of the upper doping zone. Since the PN interface can generate an interface capacitor connected with a parasite capacitor in series under reverse biased voltage, the equivalent capacitance of the gate/drain can be reduced.

The invention discloses a wide-band radio frequency power amplifier with a standby mode, a chip and a communication terminal. The wide-band radio frequency power amplifier comprises a depletion type transistor, an enhancement transistor and a switch; the depletion type transistor is connected according to a common source mode, a grid is used as input end of the wide-band radio frequency power amplifier, and a drain is used as the source of the enhancement transistor; the enhancement transistor is connected according to a common grid mode, and the drain is used as an output end of the wide-band radio frequency power amplifier; and one end of the switch is connected with the grid of the enhancement transistor, and the other end is grounded. According to the wide-band radio frequency power amplifier provided by the invention, by means of the novel and smart common source and common grid structure, the equivalent capacitance of the input end caused by the Miller effect is effectively reduced, thereby effectively improving the pole frequency and the bandwidth of the wide-band radio frequency power amplifier. Due to the implementation of the standby mode, the power consumption level of the wide-band radio frequency power amplifier is greatly reduced.