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Graphene photonic crystal terahertz amplifier

A photonic crystal and graphene technology, applied in the field of terahertz science, can solve the problems of low terahertz amplifier gain, low pump conversion efficiency, small tuning range, etc., to improve beam quality, increase effective optical path, and increase gain. Effect

Inactive Publication Date: 2015-07-22
NANKAI UNIV
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Problems solved by technology

[0008] The purpose of the present invention is to provide a graphene photonic crystal terahertz amplifier, which solves key technical problems such as low gain, small Q value, small tuning range, and low pump conversion efficiency of the terahertz amplifier in the background technology.

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Embodiment Construction

[0023] The graphene photonic crystal terahertz amplifier with 25 layers of working process cycle number of the present invention is illustrated by example:

[0024] The structure of the device is as figure 1 As shown, a non-doped single-layer graphene is grown on a single crystal silicon layer with a thickness of 20 μm and a resistivity of 100 Ω cm, and a 20 μm wide, 100 nm thick annular copper strip is obtained on the graphene by photolithography, evaporation and lift-off processes As an electrode, this is a periodic structure. Then bond single crystal silicon, grow graphene, and copper-plated electrodes, and repeat this process to obtain a one-dimensional photonic crystal structure of graphene for 25 cycles. The positive and negative electrodes are alternately arranged on each layer of graphene, and the positive and negative electrodes are respectively connected in parallel to apply a bias voltage. The device size is 3mm x 3mm x 0.5mm.

[0025] The basic working principle...

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Abstract

The invention discloses a graphene photonic crystal terahertz amplifier and a regulating and control method thereof. Due to the characteristics that the conductivity of graphene at specific temperature and bias voltage is a negative value in a terahertz wave band, the graphene can be used as a terahertz wave gain medium, and the function of the terahertz amplifier can be achieved by using a periodic 'graphene-single crystal silicon layer' one-dimensional photonic crystal structure. According to the graphene photonic crystal terahertz amplifier, different bias voltages can be applied by alternatively introducing positive and negative electrodes to the graphene which is periodically arranged, and active regulation and control on terahertz wave amplification and working frequency are achieved. As the one-dimensional photonic crystal structure is combined with the terahertz gain characteristics of the graphene, due to the cascade connection of a plurality of pieces of graphene, and the photonic band gap, the slow light enhancement, the F-P effect and the mode competitive effect of the one-dimensional photonic crystal structure, the gain amplification coefficient and the Q-value of the terahertz waves in a single transmission mode can be effectively increased, and the single-frequency terahertz wave output with the high gain and high Q-value is achieved. The graphene photonic crystal terahertz amplifier works in a frequency band of 1-2THz, the working frequency can be tuned according to working voltage, the maximum output gain is greater than 30dB, the Q-value is greater than 50, and the graphene photonic crystal terahertz amplifier is a large-format high-performance terahertz amplifier.

Description

technical field [0001] The invention belongs to the field of terahertz science and technology, and in particular relates to a terahertz wave amplifier and a working method thereof. Background technique [0002] Terahertz wave refers to the frequency between 0.1-10THz (1THz=10 12 THz, corresponding to electromagnetic waves with a wavelength in the range of 3 mm to 30 μm, this band is between microwaves and light waves, and is an intersecting field between electronics and photonics. Due to its special position in the electromagnetic spectrum, terahertz waves have many superior characteristics such as perspective, safety, and high signal-to-noise ratio, and have very important academic and application values ​​in the fields of spectroscopy, imaging, and communication. However, the energy conversion efficiency of existing terahertz radiation sources is low, and the radiation power is very limited, which has become the primary bottleneck restricting the development of terahertz ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/39G02B6/122H01S1/02
CPCG02B6/1225G02F1/39H01S1/02
Inventor 范飞常胜江
Owner NANKAI UNIV
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