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Ultrafast electro-optical modulation device and method

An electro-optical modulation and ultra-fast technology, applied in the field of communication, can solve the problems of only barely reaching terahertz, limiting the response speed of the modulator, high power consumption, etc., achieving the effect of easy secondary design, good modulation effect, and simple composition.

Pending Publication Date: 2022-05-13
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, due to the strong tunneling current, the equivalent resistance R of the entire circuit system is also large
Therefore, the RC relaxation time can greatly limit the modulation speed
Under comprehensive consideration, the modulation speed of such devices can only barely reach the terahertz level. For example, the optical modulation scheme based on inelastic electron tunneling in the nanogap proposed by the Swiss Federal Institute of Technology Zurich (Nature Nanotechnology, vol.10, pp .1058-1063(2015)), etc.
In addition, due to the existence of tunneling current, such devices will have a large power consumption during operation
[0004] As mentioned above, so far, although the modulation speed of the modulator can theoretically reach the terahertz level, in practice, factors such as a large RC time constant limit the response speed of the modulator, and modulation devices with a terahertz modulation speed are rarely available. It has been reported, and the modulation process is generally accompanied by large power consumption

Method used

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Examples

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example 1

[0043] Example 1: An electro-optic modulator with ultra-fast modulation speed, one of the structures is a flat two-dimensional structure, and its composition is as follows figure 2 and image 3 As shown, it includes a conductor 1 , another conductor 2 , and a nanoscale conductor 3 seamlessly electrically connected to 2 , and conductors 1 , 2 , and 3 are all located on a dielectric substrate 5 . Use external instruments to apply modulation signals, such as external electrodes, so that there is a potential difference of ΔV between conductors 1 and 2. By controlling the level of the potential difference ΔV, the carrier density distribution of the nanometer-sized conductive material structure 3 will be significantly changed, thereby causing the localized spatial light field distribution properties near the surface of the structure 3 to change accordingly. The localized near-field is still not directly perceivable by external detectors. Furthermore, the composition materials and...

example 2

[0044] Example 2: An electro-optic modulator with ultra-fast modulation speed, one of its structures only needs one piece of conductor, its front view and side view are as follows Figure 4 and Figure 5 As shown, conductors 1 and 3 are seamlessly electrically connected. Based on the same principle as in Example 1, a background electric field given by a modulation signal source in the area surrounded by the dotted line acts as a modulation signal to affect the carrier density distribution of the micro-nano conductive structure 3, thereby affecting the properties of the output light, and finally achieves the modulation. Effect.

example 3

[0045] Example 3: An electro-optic modulator with ultra-fast modulation speed, the other structure is a three-dimensional rotationally symmetrical three-dimensional structure, such as Figure 6 As shown, the cross-sectional view of the plane where the axis of symmetry is located is shown in Figure 7 , including a conductor 1, another conductor 2, a nanoscale conductive material structure 3 seamlessly electrically connected to the 2, and an insulating medium 4 filled between the conductors. According to the same principle and operation steps as Example 1, this device structure can also realize electro-optic modulation.

[0046] In order to clearly demonstrate the modulation effect and response speed of the modulator device designed based on the modulation method in the present invention, we performed numerical simulation on Example 3, and estimated its modulation contrast and response time. The modulation contrast can be calculated according to the scattering cross section σ ...

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Abstract

The invention relates to the technical field of information, and discloses an ultrafast electro-optical modulation device and method. The device comprises an electric conductor I, an electric conductor II and an electric conductor III, wherein the electric conductor I and the electric conductor II form an antenna structure; the antenna structure receives an external modulated electrical signal. The conductor III is positioned in the antenna structure; the third electric conductor is of a micro-nano structure, and a part with the curvature radius smaller than 10 nanometers exists on the micro-nano structure. The modulation method comprises the following steps: after light to be modulated is enhanced by the antenna structure, exciting at the third conductor to generate a localized spatial light field; the electric potential difference between the conductor I and the conductor II caused by the modulation electric signal affects the carrier density distribution in the micro-nano structure; the carrier density distribution changes to change the property of the spatial light field so as to modulate the light to be input. The device is suitable for modulation of visible light and infrared band light, has the advantages of ultra-fast modulation speed and ultra-low power consumption, is simple in structure, and facilitates secondary design optimization and integrated manufacturing.

Description

technical field [0001] The invention relates to the field of communication technology, in particular to an electro-optic modulation device with ultra-fast modulation speed and ultra-low power consumption, and an electro-optic modulation method based on the device. Background technique [0002] Optical modulators control a certain degree of freedom of light, including light intensity modulators, phase modulators, polarization modulators, and spatial direction modulators. For more than ten years, various modulators based on different principles have emerged in an endless stream. The representative ones are: in 2008, the Peking University team proposed a photonic crystal system containing a strongly nonlinear conductor or semiconductor (C153 doped polystyrene), which can Optical modulation with lower power consumption and picosecond-level response speed is achieved through nonlinear effects (Nature Photonics, vol. 2, pp. 185-189 (2008)). In 2009, the Los Alamos National Labora...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
CPCG02F1/01G02F1/0102
Inventor 陈学文李莞聪张朴
Owner HUAZHONG UNIV OF SCI & TECH
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