Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene photonic crystal terahertz amplifier

A photonic crystal and graphene technology, applied in the field of terahertz science, can solve the problems of low terahertz amplifier gain, low pump conversion efficiency, small tuning range, etc., to improve beam quality, increase effective optical path, and increase gain. Effect

Inactive Publication Date: 2018-02-02
NANKAI UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a graphene photonic crystal terahertz amplifier, which solves key technical problems such as low gain, small Q value, small tuning range, and low pump conversion efficiency of the terahertz amplifier in the background technology.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene photonic crystal terahertz amplifier
  • Graphene photonic crystal terahertz amplifier
  • Graphene photonic crystal terahertz amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] An example description of the graphene photonic crystal terahertz amplifier with 25 layers in the working process of the present invention:

[0024] The structure of the device is as figure 1 As shown, a non-doped single-layer graphene is grown on a single crystal silicon layer with a thickness of 20μm and a resistivity of 100Ω·cm, and a 20μm wide and 100nm thick ring-shaped copper strip is obtained on the graphene by photolithography, evaporation and stripping processes As an electrode, this is a periodic structure. Then bond single crystal silicon upwards, grow graphene, and plate copper electrodes, and repeat this process to obtain a one-dimensional photonic crystal structure of graphene with 25 cycles. The positive electrodes and negative electrodes are alternately arranged on each layer of graphene, and the positive and negative electrodes are connected in parallel to apply a bias voltage. The device size is 3mm×3mm×0.5mm.

[0025] The basic working principle of the d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a graphene photonic crystal terahertz amplifier and a regulating and control method thereof. Due to the characteristics that the conductivity of graphene at specific temperature and bias voltage is a negative value in a terahertz wave band, the graphene can be used as a terahertz wave gain medium, and the function of the terahertz amplifier can be achieved by using a periodic 'graphene-single crystal silicon layer' one-dimensional photonic crystal structure. According to the graphene photonic crystal terahertz amplifier, different bias voltages can be applied by alternatively introducing positive and negative electrodes to the graphene which is periodically arranged, and active regulation and control on terahertz wave amplification and working frequency are achieved. As the one-dimensional photonic crystal structure is combined with the terahertz gain characteristics of the graphene, due to the cascade connection of a plurality of pieces of graphene, and the photonic band gap, the slow light enhancement, the F-P effect and the mode competitive effect of the one-dimensional photonic crystal structure, the gain amplification coefficient and the Q-value of the terahertz waves in a single transmission mode can be effectively increased, and the single-frequency terahertz wave output with the high gain and high Q-value is achieved. The graphene photonic crystal terahertz amplifier works in a frequency band of 1-2THz, the working frequency can be tuned according to working voltage, the maximum output gain is greater than 30dB, the Q-value is greater than 50, and the graphene photonic crystal terahertz amplifier is a large-format high-performance terahertz amplifier.

Description

Technical field [0001] The invention belongs to the field of terahertz science and technology, and specifically relates to a terahertz wave amplifier and a working method thereof. Background technique [0002] Terahertz wave refers to the frequency of 0.1-10THz (1THz=10 12 THz corresponds to electromagnetic waves in the range of 3mm~30μm. This waveband is between microwave and light, and is the intersection of electronics and photonics. Because of its special position in the electromagnetic spectrum, terahertz waves have many superior characteristics such as perspective, safety, and high signal-to-noise ratio, and have very important academic and application values ​​in the fields of spectroscopy, imaging, and communications. However, the existing terahertz radiation sources have low energy conversion efficiency and very limited radiation power, which has become the primary bottleneck restricting the development of terahertz technology. In addition, terahertz waves are strongly ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/39G02B6/122H01S1/02
CPCG02B6/1225G02F1/39H01S1/02
Inventor 范飞常胜江
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com