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Transient voltage suppression device

A transient voltage suppression and component technology, applied in electrical components, electro-solid devices, semiconductor/solid-state device components, etc., can solve the problem that transient voltage suppressors have weak electrostatic discharge and surge protection capabilities and cannot withstand high power. energy and other issues, to achieve the effect of increasing the effective area, improving the tolerance, and reducing the equivalent capacitance

Pending Publication Date: 2019-12-13
UPI SEMICON CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under this trend, the protection ability of the transient voltage suppressor against electrostatic discharge and surge is weakened by the reduction of the component size, so it cannot bear the energy of large power

Method used

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Embodiment Construction

[0026] The present invention will be described more fully with reference to the accompanying drawings of this embodiment. However, the present invention can also be embodied in various forms, and should not be limited to the embodiments herein. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity. The same or similar symbols represent the same or similar elements, and the following paragraphs will not repeat them one by one.

[0027] In the following embodiments, when the first conductivity type is P type, the second conductivity type is N type; when the first conductivity type is N type, the second conductivity type is P type. In this embodiment, it may be implemented as an example that the first conductivity type is P-type and the second conductivity type is N-type. But the present invention is not limited thereto.

[0028] figure 1 It is a schematic top view of a transient voltage suppression element according to the first embodiment of ...

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Abstract

The present invention provides a transient voltage suppression device. The transient voltage suppression device comprises a substrate and a first transient voltage suppressor is provided. The substrate includes a device region and a seal-ring region. The seal-ring region surrounds the device region. A first transient voltage suppressor is located in the device region. The first transient voltage suppressor includes a first well region having a first conductivity type, a first doped region having a second conductivity type, and a second doped region having the second conductivity type. The first well region is located in the substrate of the device region. The first doped region is located in the first well region. The second doped region is located in the first well region. A third doped region having the second conductivity type is located in the substrate of the seal-ring region, and the third doped region is electrically connected to the first doped region.

Description

technical field [0001] The invention relates to an integrated circuit, in particular to a transient voltage suppression element. Background technique [0002] Generally speaking, electronic products are vulnerable to sudden and uncontrollable electrostatic discharge (ElectroStatic Discharge, ESD) or surge (Surge), which may cause damage to electronic products and cannot be restored. Currently, using a transient voltage suppressor (Transient Voltage Suppressor, TVS) is a more effective solution to electrostatic discharge or surge problems of electronic products. [0003] With the advancement of science and technology, all kinds of electronic products are developing towards the trend of high speed, high performance, light weight and short size. Under this trend, the protection ability of the transient voltage suppressor against electrostatic discharge and surge is weakened by the shrinkage of the component size, so it cannot bear the energy of higher power. Therefore, how to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/866H01L29/06H01L27/08
CPCH01L27/0814H01L29/0684H01L29/866H01L27/0255H01L29/861H01L23/528H01L23/585H01L23/60H01L23/62H01L27/0248H01L29/8611
Inventor 刘育弦陈志豪
Owner UPI SEMICON CORP
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