Charging capacitor and pump circuit

Abstract

The embodiment of the invention provides a charging capacitor and a pump circuit. The charging capacitor is applied to a pump circuit of a memory; the first end of the charging capacitor is a leading-out end of a floating gate control electrode in a floating gate MOS transistor inside the memory; the second end of the charging capacitor is a common end after a P-well contact point in the floating gate MOS transistor, a source electrode and a control gate electrode; and the power supply end of the charging capacitor is a leading-out end of an N well in the floating gate MOS transistor. The charging capacitor in the embodiment of the invention can resist high voltage, the equivalent capacitance per unit area is large, and quick and high-efficiency charging can be realized.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a charging capacitor and a pump circuit. Background technique [0002] The structure diagram of the traditional pump (charge pump) circuit is as follows: figure 1 As shown, in the pump circuit, the area of ​​the charging capacitor accounts for a relatively large proportion of the total area, that is, figure 1 The area of ​​charging capacitor C1', charging capacitor C2', charging capacitor C3', charging capacitor C4', charging capacitor C5' and charging capacitor C6'. figure 1 Among them, clk' and clkb' are clock signals with the same frequency and opposite phases, the resistor RL' and capacitor CL' are the analog equivalent load circuit of the pump circuit, and VDD' is the power supply of the pump circuit. The signal diagram of clk' and clkb' is as follows figure 2 shown. figure 1 MOS (Metal-Oxide-Semiconductor, Metal-Oxide-Semiconductor Field Effect Transistor) tubes are oft...

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Problems solved by technology

[0004] In view of the above problems, the purpose of the embodiments of the present invention is to provide a charging capacitor and a pump circuit to solve the problem that in the traditional pump circuit, when the charging capacitor uses a high-voltage MOS tube, the equivalent capacitance per unit area is small and when a low-voltage MOS tube is used, it cannot withstand high voltage problem

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