MOM capacitor

A capacitor and electrode technology, applied in the field of semiconductor integrated circuit devices, can solve the problem of small capacitance density

Active Publication Date: 2014-06-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Capacitors are widely used in radio frequency circuits, such as metal-insulator-metal (MiM) capacitors and MO

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOM capacitor
  • MOM capacitor
  • MOM capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Such as Figure 4A As shown, it is a schematic structural diagram of a MOM capacitor according to Embodiment 1 of the present invention; a MOM capacitor according to Embodiment 1 of the present invention: includes a multi-layer metal coil, and each layer of metal coil is formed by nesting two metal sub-coils; Figure 4A shows two adjacent layers of metal coils, namely the upper layer metal coil 1 and the lower layer metal coil 2. The upper metal coil 1 is formed by nesting a first metal sub-coil 11 and a second metal sub-coil 12 . The lower metal coil 2 is formed by nesting a first metal sub-coil 21 and a second metal sub-coil 22 .

[0033] Both the first metal sub-coil 11 and the second metal sub-coil 12 are respectively formed by a metal wire, the winding direction is the same, and the number of turns is also the same. The first metal sub-coil 11 loops clockwise between the outer port 11a and the inner port 11b, and the second metal sub-coil 12 loops clockwise betwe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an MOM capacitor which is formed by a plurality of layers of metal coils. Each layer of metal coil is formed by nesting two metal sub-coils. The two metal sub-coils of each layer of metal coil form a transverse capacitor structure, that is, the two metal sub-coils form two pole plates of the capacitor; and two metal sub-coils at the upper and lower adjacent two sides are connected together through a through hole. The two pole plates of the MOM capacitor are respectively formed by the metal coils; and since the metal coils have relatively-large parasitic inductance, equivalent capacitance of the MOM capacitor can be improved, capacitance density is increased and circuit area is reduced.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a metal-oxide-metal (MOM) capacitor. Background technique [0002] Capacitors are widely used in radio frequency circuits, such as metal-insulator-metal (MiM) capacitors and MOM capacitors, but capacitors are often very area-occupied devices, and their capacitance density is relatively small. As the demand for integration becomes higher and higher, the requirement for capacitance density is also higher and higher. [0003] The capacitance density of existing MiM capacitors is generally 2fF / μm 2 Left and right, the existing MOM capacitor structure has three structures. [0004] Such as figure 1 As shown, it is a structural schematic diagram of the first type of MOM capacitor; the first type of MOM capacitor is a horizontal bar structure (Horizontal Barsm, HB), including multiple metal layers, and each metal layer includes metal bars 101 and 102 , the capacitance of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/522
Inventor 黄景丰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap