MOM capacitor

Abstract

The invention discloses an MOM capacitor which is formed by a plurality of layers of metal coils. Each layer of metal coil is formed by nesting two metal sub-coils. The two metal sub-coils of each layer of metal coil form a transverse capacitor structure, that is, the two metal sub-coils form two pole plates of the capacitor; and two metal sub-coils at the upper and lower adjacent two sides are connected together through a through hole. The two pole plates of the MOM capacitor are respectively formed by the metal coils; and since the metal coils have relatively-large parasitic inductance, equivalent capacitance of the MOM capacitor can be improved, capacitance density is increased and circuit area is reduced.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a metal-oxide-metal (MOM) capacitor. Background technique [0002] Capacitors are widely used in radio frequency circuits, such as metal-insulator-metal (MiM) capacitors and MOM capacitors, but capacitors are often very area-occupied devices, and their capacitance density is relatively small. As the demand for integration becomes higher and higher, the requirement for capacitance density is also higher and higher. [0003] The capacitance density of existing MiM capacitors is generally 2fF / μm 2 Left and right, the existing MOM capacitor structure has three structures. [0004] Such as figure 1 As shown, it is a structural schematic diagram of the first type of MOM capacitor; the first type of MOM capacitor is a horizontal bar structure (Horizontal Barsm, HB), including multiple metal layers, and each metal layer includes metal bars 101 and 102 , the capacitance of ...

AI Technical Summary

Problems solved by technology

[0002] Capacitors are widely used in radio frequency circuits, such as metal-insulator-metal (MiM) capacitors and MOM capacitors, but capacitors are often very area-occupied devices, and their capacitance density is relatively small

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