Tight coupling miniaturized metamaterial structure

Abstract

A compact coupling miniaturized metamaterial structure provided by the invention comprises a dielectric substrate, a printed metal layer is arranged on the end face of one side of the dielectric substrate, a cross-shaped metal frame is arranged on the end face of the other side of the dielectric substrate, and a coupling capacitor layer is further arranged in the dielectric substrate in an embedded mode. According to the compact coupling miniaturized metamaterial structure, the inductance structure is formed by utilizing the metal frame with the cross-shaped structure, and a capacitor structure connected in parallel is formed by utilizing the interaction between the embedded coupling capacitor layer in the dielectric substrate and the printing metal layer, so that the larger equivalent capacitance is generated, the structural size of the metamaterial is reduced, and the miniaturization of the metamaterial is realized.

Description

technical field [0001] The invention relates to the field of microwaves, and more specifically, relates to a tightly coupled miniaturized metamaterial structure. Background technique [0002] The wide coverage of radar and various wireless devices has resulted in a tight use of spectrum resources. Multi-frequency communication and multi-frequency radar have become the direction of rapid development in the modern microwave field, followed by mutual interference between devices in different frequency bands. Because the metamaterial structure can frequency-select and filter electromagnetic waves in space and shield out-of-band signals, the study of metamaterial structures is of great significance. [0003] The metamaterial structure can filter electromagnetic waves in space, and exhibits obvious band-pass or band-resistance characteristics when interacting with electromagnetic waves. It is a two-dimensional periodic array structure composed of periodically arranged metal patche...

AI Technical Summary

Problems solved by technology

This method exists: 1. The degree of miniaturization is limited (because the smallest lumped device specification is 0201, the length is 0.6mm, and the width is 0.3mm, so the gap size of the distributed capacitor cannot be less than 0.5mm, but the actual PCB processing technology can be Make the gap 0.05mm, the smaller the gap between the equivalent capacitance structures, the larger the distributed capacitance); 2. The process is complex; 3. The higher the degree of miniaturization, the larger the loaded lumped capacitance, resulting in grating lobes also bigger

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