Manufacturing method of semiconductor device

a manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of deterioration of transistor characteristics such as mobility, and achieve the effect of suppressing the growth of interface silicon oxide and reducing oxygen deficiency
US20090011608A1Inactive Publication Date: 2009-01-08RENESAS TECH CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
RENESAS TECH CORP
Publication Date
2009-01-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a main surface of a semiconductor substrate, the main surface of the semiconductor substrate is heat-treated in a non-oxidation atmosphere. Next, an oxygen supplying layer made of hafnium oxide deposited by ALD and having a thickness smaller than that of the high dielectric layer is formed on the high dielectric layer, and a cap layer made of tantalum nitride is formed. Thereafter, the main surface of the semiconductor substrate is heat-treated.
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Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] The present application claims priority from Japanese Patent Application No. JP2007-128692 filed on May 15, 2007, the content of which is hereby incorporated by reference into this application.TECHNICAL FIELD OF THE INVENTION

[0002] The present invention relates to a technology for manufacturing a semiconductor device. More particularly, it relates to a technology effectively applied to the manufacture of a semiconductor device provided with a MIS (Metal Insulator Semiconductor) transistor having a gate insulating film formed to contain oxide whose relative dielectric constant is higher than that of silicon oxide (SiO2).BACKGROUND OF THE INVENTION

[0003] In recent years, with the trend of scaling down the size of MIS transistors constituting a semiconductor integrated circuit, the thickness of a gate insulating film made of silicon oxide has been rapidly reduced. However, when the thickness of the gate insulating film is reduced to about 2 nm,...

Claims

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