The invention relates to a
semiconductor switching device (1), comprising a switchable power
semiconductor (T 2 ) and at least one regulating circuit (RS 1 , R.S. 2 ), the regulation circuit includes a current sink (S 1 , S 2 ) and the current
amplifier (V 1 , V 2 ). Current sink (S 1 , S 2 ) through the adjustment
capacitor (C 1 ) and power semiconductors (T 2 ) is capacitively coupled to the collector / drain of the
MOSFET and is designed to derive the current flowing through the regulating
capacitor (C 1 ) of the current until the maximum current that can be set. Current
amplifier (V 1 , V 2 ) on the input side and the current sink (S 1 , S 2 ) and the regulating
capacitor (C 1 ) is connected to the end of the
capacitive coupling and is connected to a positive or negative supply
voltage and to a power
semiconductor (T 2 ) is connected to the control
electrode and is designed to amplify the current flowing through the regulating capacitor (C 1 ) of the current not flowing through the current sink (S 1 , S 2 ) and conducts the
partial current into the control
electrode of the power semiconductor (T2), so that the
partial current in the power semiconductor (T2) is offset during the switching process. 2 ) on the collector-emitter-path or on the drain-source-path. In order to improve the semiconductor switching device (1), it is proposed that the semiconductor switching device (1) also has an additional circuit (1.1) for
adaptive switching transition, which is connected to the power semiconductor (T 2 ) and the additional circuit is designed to, when the collector-emitter-path or the drain-source-path of the power semiconductor is switched from a blocked state to a conducting state, the power semiconductor (T 2 )’s collector
voltage or drain
voltage.