630 results about "Chip select" patented technology

A semiconductor storage employs a base substrate (101) having a command/address external terminal group (CA), a data input/output external terminal group (DQ), and a single chip select external terminal (CS), and also comprises a plurality of memory chips (110) to (113) mounted on a base substrate (101), each of which can individually carry out read and write operations. The terminals (CA), (DQ), and (CS) are connected to an interface chip (120). The interface chip (120) has a chip select signal generation circuit that can individually activate a plurality of memory chips (110) to (113) on the basis of an address signal fed by way of the terminal (CA) and on the basis of a chip select signal fed by way of the terminal (CS).

Disclosed is a flash memory controller connected to a flash memory module. The pin-out of the flash memory controller combines ready-busy and chip-select signals. In one embodiment, the flash memory module is made up of a set of banks, each consisting of a plurality of devices, with each bank sharing a single chip-select/ready-busy connection to the controller.

A memory controller provides programmable flexibility, via one or more configuration registers, for the configuration of the memory. The memory may be optimized for a given application by programming the configuration registers. For example, in one embodiment, the portion of the address of a memory transaction used to select a storage location for access in response to the memory transaction may be programmable. In an implementation designed for DRAM, a first portion may be programmably selected to form the row address and a second portion may be programmable selected to form the column address. Additional embodiments may further include programmable selection of the portion of the address used to select a bank. Still further, interleave modes among memory sections assigned to different chip selects and among two or more channels to memory may be programmable, in some implementations. Furthermore, the portion of the address used to select between interleaved memory sections or interleaved channels may be programmable. One particular implementation may include all of the above programmable features, which may provide a high degree of flexibility in optimizing the memory system.

A central processing unit (CPU) having a built-in dynamic random-access memory (DRAM) with exclusive access to the DRAM when the CPU performs an interlock access to the DRAM. A memory controller prevents the DRAM from being externally accessed while the CPU is performing the interlock access. When the memory controller receives an external request for accessing the DRAM during a time when the CPU is performing an interlock access to the DRAM, the memory controller outputs a response signal indicating that external access to the DRAM is excluded or inhibited. The request signal can be a hold request signal for requesting a bus right or can be a chip select signal. The response signal can be a hold acknowledge signal or a data complete signal. The memory controller can be switched to and from first and second lock modes, where hold request and hold acknowledge signals are used during the first lock mode and chip select and data complete signals are used in the second lock mode.

A system and method to reduce standby currents in input buffers in an electronic device (e.g., a memory device) is disclosed. The input buffers may be activated or deactivated by the state of a chip select (CS) signal. In case of a memory device, the active and precharge standby currents in memory input buffers may be reduced by turning off the input buffers when the CS signal is in an inactive state. A memory controller may supply the CS signal to the memory device at least one clock cycle earlier than other control signals including the RAS (row address strobe) signal, the CAS (column address strobe) signal, the WE (write enable) signal, etc. A modified I/O circuit in the memory device may internally delay the CS signal by at least one clock cycle to coincide its timing with the RAS/CAS signals for normal data access operation whereas the turning on/off of the memory input buffers may be performed by the CS signal received from the memory controller on the previous cycle. Thus, activation and deactivation of memory input buffers may be performed without forcing the memory device into power down mode and without employing complex circuits for power management. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

One embodiment of the present invention provides a system that reduces the number of power and ground pins required to drive address signals to system memory. During operation, the system receives address signals associated with a memory operation from a memory controller, wherein the address signals are received at a buffer chip, which is external the memory controller. The system also receives chip select signals associated with the memory operation at the buffer chip. Next, the system uses the chip select signals to identify an active subset of memory modules in the system memory, which are active during the memory operation. The system then uses address drivers on the buffer chip to drive the address signals only to the active subset of memory modules, and not to other memory modules in the system memory. In this way, the buffer chip requires fewer power and ground pins for the address drivers because the address signals are only driven to the active subset of memory modules, instead of being driven to all memory modules in the system memory.

A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system, to selectively isolate one or more loads of the first number of ranks from the computer system, and to translate between a system memory domain and a physical memory domain of the memory module.

A method of operation of a storage control system includes: partitioning memory channels with memory devices; selecting a super device with one of the memory devices from one of the memory channels, the super device having a super chip select connected to chip selects of the memory devices; and selecting a super block associated with the super device.

A stacked chip assembly includes individual units having chips mounted on dielectric layers and traces on the dielectric layers interconnecting the contacts of the chips with terminals disposed in peripheral regions of the dielectric layers. At least some of the traces are multi-branched traces which connect chip select contacts to chip select terminals. The units are stacked one above the other with corresponding terminals of the different units being connected to one another by solder balls or other conductive elements so as to form vertical buses. Prior to stacking, the multi-branched traces of the individual units are selectively interrupted, as by breaking the individual branches, so as to leave chip select contacts of chips in different units connected to different chip select terminals and thereby connect these chips to different vertical buses. The individual units desirably are thin and directly abut one another so as to provide a low-height assembly with good heat transfer from chips within the stack.

A first memory chip (103a) and a second memory chip (103b) mounted in this order on one surface of a mounting board (101) each have a rectangular planar shape and include a plurality of electrode pads formed in a single line along one side of the rectangle. An electrode pad line of the second memory chip (103b) is formed in parallel with an electrode pad line of the first memory chip (103a). A chip select pad is disposed on an end of the electrode pad line. Control pads, address pads, or data pads (113a) of the first memory chip (103a) are wire bonded to first stitches (109) formed in a single line along one side of the rectangle. A chip select pad (121a) and a chip select pad (121b) are wire bonded to second stitches (111) formed in a line along a side adjacent to a side of the chip select pad (121a). Accordingly, an increase in package area is suppressed when a plurality of memory chips are stacked.

A computer system comprises a memory controller and a synchronous non-volatile memory device coupled to the memory controller via a main memory bus. The synchronous non-volatile memory device has external interconnects arranged in a manner that corresponds to interconnects of a synchronous dynamic random access memory device. The synchronous flash memory device, however, comprises a reset connection, and a Vccp power supply connection correspond to first and second no-connect (NC) interconnect pins of the synchronous dynamic random access memory. In one embodiment, the synchronous non-volatile memory device has a command interface comprising a write enable connection (WE#) to receive a write enable signal, a column address strobe connection (CAS#) to receive a column address strobe signal, a row address strobe connection (RAS#) to receive a row address strobe signal, and a chip select connection (CS#) to receive a chip select signal.

A semiconductor memory device is provided which effectively reduces a consumption of current of a system of circuits associated with refresh operations. A control signal circuit 2 controls n-channel transistors 3C, 4B to be in an OFF-state based on an internal chip select signal SCI in an interval time period between the refresh operations, wherein the n-channel transistors 3C, 4B are connected between the system of circuits associated with refresh operations (an internal voltage-down circuit 3 and a boost circuit 4) and the ground, so as to break down a leak path of the system of circuits associated with refresh operations for reducing the leakage of current. At a timing of starting the refresh operation by triggering a timer, the internal chip select signal SCI is transitioned to a high level for supplying a ground voltage to the internal voltage-down circuit 3 and the boost circuit 4.

A system includes a serial bus having an electrical net for conveying a clock signal, and a master device and a plurality of slave devices coupled to the serial bus. The master device modulates a clock signal on its output on an electrical net according to first and second manners to select respective first and second of the slave devices. The first manner is distinct from the second manner. In alternate embodiments, the first and second manners are: (1) different frequencies of the clock signal; and (2) pulse trains on the clock signal with different predetermined numbers of clock edges prior to the assertion of a single slave select signal from the master device. In alternate embodiments: (1) each slave detects the first and second manners directly from the master; and (2) a distinct device detects the first and second manners from the master device and generates individual slave selects.

A memory module substrate printed-circuit board (PCB) has multi-type footprints and an edge connector for mating with a memory module socket on a motherboard. Two or more kinds of dynamic-random-access memory (DRAM) chips with different data I/O widths can be soldered to solder pads around the multi-type footprints. When ×4 DRAM chips with 4 data I/O pins are soldered over the multi-type footprints, the memory module has a rank-select signal that drives chip-select inputs to all DRAM chips. When ×8 DRAM chips with 8 data I/O pins are soldered over the multi-type footprints, the memory module has two rank-select signals. One rank-select drives chip-select inputs to front-side DRAM chips while the second rank-select drives chip-select inputs to back-side DRAM chips. Wiring traces on the PCB cross-over data nibbles between the solder pads and the connector to allow two ×4 chips to drive a byte driven by only one ×8 chip.

A large area display comprises multiple sub-units arranged in rows and columns. Each sub-unit has associated row and column drivers, with the column driver driving the column electrodes of all the sub-units a column. A chip select means provides a separate chip select signal to each row of sub-units, so that only one row of sub-units are scanned at a time, and all the sub-units in the selected row are scanned simultaneously. Column data are supplied to the column drivers as a linear series of column data values; and delayed Gate Start Pulse signals are fed to the column drivers in each column of sub-units after the first so that these column drivers receive the delayed Gate Start Pulse signals and apply the appropriate column data values to their associated column electrodes.

The delay locked loop (“DLL”) delay interval can be locked to stop the DLL from wasting power in unnecessarily switching to synchronize the device with the DLL is associated to the system clock. This is achieved by adding logic sensing when a DRAM device will not imminently be called upon to output data and when the device has stabilized. Waiting for the DLL delay interval to stabilize before locking the delay interval still allows the DLL to immediately and effectively resume operations when the DLL is needed to synchronize the output of the DRAM device with the system clock. The DLL delay interval can be locked, together with the DLL clock, after the DRAM device is deselected by the chip select control line, after a number of no operation commands have been received, and/or after any command issued to the DRAM device has been completed.

A light emitting diode illuminating apparatus for emitting colorful light includes a substrate, a first lighting element, a second lighting element, a third lighting element. The first, second and third lighting elements are juxtaposed at the substrate. The first lighting element includes a first LED chip, and a first filling layer encapsulating it. The first filling layer includes red phosphor generally evenly doped therein. The second lighting element includes a second LED chip and a second filling layer encapsulating it. The third lighting element includes a third LED chip and a third filling layer encapsulating it. All of the first, the second and the third LED chips are the same kind of LED chip selected from the group consisting of GaN LED chips, AlGaN LED chips and InGaN LED chips. Light emitting from the filling layers are capable of mixing to produce light of a uniform color.

A synchronous Flash memory device is described that enhances initialization and boot memory device identification in synchronous memory systems. A boot memory is typically a separate device that is tied to a specific chip select line and/or address range of a system, whereas synchronous Flash memory generally can be placed in any available memory slot and assigned one of several possible chip selects and address ranges. This lack of predictability makes installing a boot memory based on a non-volatile synchronous memory device difficult. A synchronous Flash boot memory device of the detailed invention is adapted to identify itself and its chip select/address range to the memory controller at power up, reset, or upon receiving an identification request. This allows the utilization of the detailed synchronous Flash memory as a boot memory in synchronous systems where a reserved boot memory slot and/or chip select are not provided.

After a read operation is conducted to a memory area designated by an address in response to a combination of a data destructive signal and a chip select signal, a bit line is pre-charged with a ground potential and an electric potential of a plate line is lowered, thereby stopping the data from being written back to an area in which the data is destroyed by the read operation. The electric potential of the word line may be kept at VDD level without boosting it to a potential for writing back the data. The bit line may be clamped to the ground potential, thereby stopping the read data from being output to an outside of a memory device to stop an operation of a sense amplifier.