Terminal structure of metal oxide semiconductor field effect transistor and manufacturing method of terminal structure of metal oxide semiconductor field effect transistor

Abstract

The invention relates to a terminal structure of a metal oxide semiconductor field effect transistor (MOSFET). The terminal structure comprises an N-type cut-off ring and further comprises a first P-type low-doped region and a second P-type low-doped region, wherein the first P-type low-doped region and the second P-type low-doped region are formed between the cut-off ring and an active region through ion implantation, the implantation dose ranges from 1.5*10<11> / cm<2> to 2*10<13> / cm<2>, implantation energy ranges from 20 kilo electron volts to 80 kilo electron volts, the first P-type low-doped region is closer to the active region than the second P-type low-doped region, and the length of the first P-type low-doped region is smaller than that of the second P-type low-doped region. The invention further relates to a manufacturing method of the terminal structure of the MOSFET. The two P-type low-doped regions are adopted for reducing a surface electric field and increasing the breakdown voltage of the MOSFET, the terminal structure replaces a traditional terminal structure with a plurality of voltage dividing rings, the terminal size is greatly reduced, the effective use area of a chip is increased, and parameters of the chip are more excellent under the same area.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a terminal structure of a metal oxide semiconductor field effect transistor, and also to a manufacturing method of the terminal structure of a metal oxide semiconductor field effect transistor. Background technique [0002] The metal-oxide-semiconductor field-effect transistor (MOSFET) market competition is becoming more and more exciting, and all manufacturers are trying to reduce costs. The solutions adopted mainly include increasing the current density, increasing the effective use area of ​​the chip, and reducing the size of the terminal. [0003] At present, the terminals of most MOSFETs still use a voltage divider ring structure. The disadvantage of this structure is that it occupies a large chip area. Contents of the invention [0004] Based on this, it is necessary to provide a terminal structure of a metal oxide semiconductor field effect transistor with a smaller size. [...

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