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Rapid expanding growth method of silicon carbide single crystal

A technology of silicon carbide single crystal and growth method, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem that the rapid diameter expansion of silicon carbide single crystal cannot be well achieved.

Pending Publication Date: 2020-09-25
河北同光科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The purpose of the present invention is to provide a method for rapidly expanding the diameter of silicon carbide single crystals, which is used to solve the technical problem in the prior art that the rapid diameter expansion of silicon carbide single crystals cannot be well realized under the premise of ensuring the crystal quality

Method used

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  • Rapid expanding growth method of silicon carbide single crystal
  • Rapid expanding growth method of silicon carbide single crystal
  • Rapid expanding growth method of silicon carbide single crystal

Examples

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Effect test

Embodiment 1

[0063] A method for rapidly expanding the diameter of a silicon carbide single crystal, the steps are as follows:

[0064] Step S1, cutting a 6-inch forward silicon carbide single crystal block, and then grinding and chemical-mechanical polishing the upper and lower surfaces and the peripheral surface of the wafer, so that the surface roughness is less than 1 nm, and processing it into a silicon carbide seed crystal with a thickness of 4 mm, Then its surface is cleaned, packaged and set aside;

[0065] Step S2, paste the forward silicon carbide wafer prepared in step S1 as a seed crystal into a groove with a tantalum carbide coating crucible cover, the depth of the groove is 1 mm, and the surface roughness of the groove pasted with the seed crystal is 5 μm, so that Part of the circumference of the silicon carbide seed crystal is exposed to the outside, ensuring that there are no gaps and air bubbles between the seed crystal and the crucible lid;

[0066] Step S3, fixing the d...

Embodiment 2

[0073] A method for rapidly expanding the diameter of a silicon carbide single crystal, the steps are as follows:

[0074] Step S1, cutting a 6-inch forward silicon carbide single crystal block, and then grinding and chemical-mechanical polishing the upper and lower surfaces and the peripheral surface of the wafer, so that the surface roughness is less than 1 nm, and processing it into a silicon carbide seed crystal with a thickness of 4 mm, Then its surface is cleaned, packaged and set aside;

[0075] Step S2, paste the forward silicon carbide wafer prepared in step S1 as a seed crystal into a groove with a tantalum carbide coating crucible cover, the depth of the groove is 1 mm, and the surface roughness of the groove pasted with the seed crystal is 5 μm, so that Part of the circumference of the silicon carbide seed crystal is exposed to the outside, ensuring that there are no gaps and air bubbles between the seed crystal and the crucible lid;

[0076] Step S3, fixing the d...

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Abstract

The invention discloses a rapid expanding growth method of a silicon carbide single crystal, belonging to the technical field of semiconductor crystal growth. The invention aims to solve the problem that rapid expanding of silicon carbide single crystals cannot be better realized on the premise of ensuring crystallization quality in the prior art. According to the method, a silicon carbide singlecrystal material with a certain thickness is used as a seed crystal, the circumferential surface of the silicon carbide single crystal is polished through a curved-surface chemical mechanical polishing technology so as to realize lateral expanding growth, and a growth component flow guide plate is arranged in a crystal growth cavity and silicon carbide powder and used for controlling the silicon carbide single crystal to preferentially perform expanding growth and then perform axial growth; and a metal or alloy compound material with high temperature resistance, corrosion resistance and a lowradiation coefficient is adopted to for coating treatment of a surface layer and an internal structure material of the growth cavity, so nucleation growth of silicon carbide on the surface of the growth cavity can be inhibited, the formation of polycrystals is effectively suppressed, and the situation that the silicon carbide single crystal encounters generated parasitic polycrystals in the expanding process and stops expanding is effectively prevented.

Description

technical field [0001] The invention relates to the technical field of semiconductor crystal growth, in particular to a method for rapidly expanding the diameter of a silicon carbide single crystal. Background technique [0002] Silicon carbide (SiC) material is a wide bandgap semiconductor material with excellent physical and electrical properties. Its forbidden band width is 3.5eV, and it has 10 times the breakdown electric field strength and 3 times the thermal conductivity of silicon. These outstanding properties make silicon carbide single crystal materials have broad application prospects in the fields of high-power, high-temperature and high-frequency devices. With the in-depth development of silicon materials, silicon-based devices are approaching the performance limit of silicon materials themselves. In order to further improve the performance of devices, only silicon carbide semiconductor materials with stronger intrinsic characteristics can be sought. Whether it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/00
Inventor 张福生杨昆刘新辉牛晓龙路亚娟尚远航
Owner 河北同光科技发展有限公司
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