Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

202 results about "Nucleation growth" patented technology

Monoatomic dispersed MXene materials and applications in lithium battery negative electrodes

The invention discloses a monatomic dispersed MXene material and applications in lithium battery negative electrodes. The monatomic dispersed MXene material is characterized in that single doped metalatoms are dispersed on the surface of the sheet layer of the monoatomic dispersed MXene material, and can realize controllable nucleation growth of metal lithium in an initial metal lithium deposition stage; lithium tends to nucleate uniformly on the MXene layer containing single doped atoms, originates from a large number of doped metal atoms, and then grows vertically along the nucleation position due to a strong electric field at the edge so as to form bowl-shaped lithium and even blocky lithium, so that the growth of lithium dendrites is avoided; and when the monatomic dispersed MXene material is used as a metal lithium negative electrode, the monatomic dispersed MXene material is a dendrite-free metal lithium negative electrode, and the negative electrode has low overpotential, longcycle life and deep dissolution deposition plating performance. According to the invention, based on mature roll-to-roll and spraying technologies, the metal lithium negative electrode can be easily expanded in scale so as to substantially benefit the development of lithium batteries in the future.
Owner:BEIHANG UNIV

Method for preparing doped perovskite thin film battery by dissolving lead iodide at room temperature

The invention discloses a method for preparing a doped perovskite thin film battery by dissolving lead iodide at a room temperature. A battery structure sequentially comprises a conductive substrate 1, an electron transport layer 2, a doped perovskite absorption layer 3, a hole transport layer 4 and a top electrode 5 from bottom to top, wherein the doped perovskite absorption layer is prepared by first dissolving ammonium chloride and lead iodide in a DMF solvent according to a certain mole ratio and performing vibration for 2-3 minutes at the room temperature, then spin-coating the mixture on a substrate, and finally depositing an organic halide (MAI, FAI or MAI/FAI mixture) by a CVD (Chemical Vapor Deposition) reaction or spin-coating the organic halide by a solution method. The perovskite thin film battery is prepared by using the ammonium chloride to help dissolve the lead iodide, thus, the lead iodide can be effectively prevented from being difficult to dissolve or a crystal can be effectively prevented from being easy to separate out in the spin-coating process, a metastable state in the preparation process of a polar solvent is prevented, the preparation of a thin film is facilitated, perovskite nucleation growth is facilitated, and the battery conversion efficiency is improved; and moreover, a large-area perovskite thin film battery can be prepared at the room temperature.
Owner:HEFEI UNIV OF TECH

Solventing-out crystallization device and method through auxiliary control of films

The invention provides a solventing-out crystallization technique device and method through auxiliary control of films, and belongs to the technical field of crystallization engineering. When a crystallization solution is added to a raw material pot, a solventing-out agent is added to a material-liquid pot, electronic scales, a computer, a stirring device and temperature controlling devices are started, and after a system is stable, squirm pumps of the material-liquid pot are started, so that solventing-out agents can circulate between the material-liquid pot and a film assembly; and after the solventing-out agent is stable in circulation, the squirm pump connected to the raw material pot is started so that the crystallization solution enters the film assembly. The solventing-out agent and the crystallization solution which are in sufficient contact in the film assembly can perform nucleation growth in the film assembly, and then the solventing-out agent and the crystallization solution, after the nucleation growth, can flow into an external storing pot for filtration and post-treatment; and the solventing-out agent and the crystallization solution can also perform nucleation growth outside the film assembly, and after solutes are wholly dissolved, filtration is performed. The electronic scales record the addition quantity of the solventing-out agent in a real-time manner, and the addition quantity of the solventing-out agent is systematically controlled through controlling films and operation conditions, so that ideal crystal products are obtained.
Owner:DALIAN UNIV OF TECH

Biological zinc alloy with fine lamellar eutectic structure and preparation method thereof

The invention relates to a biological zinc alloy with a fine lamellar eutectic structure and a preparation method thereof, and belongs to the technical field of design and manufacturing of biologicalzinc alloys. The eutectic biological zinc alloy is prepared from the following components in percentage by mass: 98.9 to 99.1 percent of zinc, 0.8 percent of aluminum and 0.1 to 0.3 percent of zirconium. The preparation method comprises the following steps: taking zinc powder, aluminum powder and zirconium powder according to designed components; carrying out ball milling for 2 to 4h at the speedof 250 to 400r/min under a protection atmosphere to obtain mixed powder; preparing the zinc-aluminum-zirconium eutectic biological alloy by adopting an SLM technology under the protection atmosphere.According to the biological zinc alloy provided by the invention, an aluminum-rich phase and a zinc-rich phase in a base body are alternatively separated out and condensed, so that the lamellar eutectic structure is generated in a zinc-aluminum alloy, and the content of zirconium is increased and can further refine the lamellar eutectic structure; in addition, the characteristic of quick solidification rate of an SLM technology is applied and can inhibit nucleation growth, thus further refining the lamellar eutectic structure of the zinc alloy; the lamellar eutectic structure is formed and refined, so that the mechanical properties of the biological zinc alloy are improved, and the application of the biological zinc alloy to the field of tissue repairing is promoted.
Owner:JIANGXI UNIV OF SCI & TECH

Vapor phase preparation method of core-shell structure Cu / Ag nano alloy

The invention discloses a vapor phase preparation method of a core-shell structure Cu / Ag nano alloy, and belongs to the technical field of nano materials, the preparation method is as follows: dual source gas aggregation clustering growth, to be more specific, an inert buffer gas is introduced into a condensation chamber, a constant air pressure is kept, Cu and Ag powder are simultaneously thermally evaporated by magnetron sputtering of Cu and Ag elemental target materials or by double crucibles to produce dense Cu and Ag atom gases, nucleation growth of Cu and Ag atoms is performed in a buffer gas atmosphere to form Cu and Ag clusters, the Cu and Ag clusters flow with the buffer gas to a nozzle at the top of the condensation chamber for further growth of core-shell structure Cu / Ag nano alloy clusters; and cluster beam deposition, to be more specific, Cu / Ag clusters are sprayed along with the buffer gas from the nozzle to a high vacuum chamber to complete growth and form a directional cluster beam to deposit on the surface of a substrate to obtain the Cu / Ag nano alloy. The vapor phase preparation method belongs to a physical preparation method, and has the advantages of simple operation, high versatility, good process control and no error making, and the prepared product has high purity, clean surface and good monodispersity.
Owner:南通纳瑞纳米科技有限公司

Preparation method of three-dimensional self-assembled flower-like tungsten disulfide electrode material

A preparation method of a three-dimensional self-assembled flower-like tungsten disulfide electrode material comprises the steps that sodium tungstate dihydrate is added into a mixed solution of deionized water and ethanol, stirring is performed till the sodium tungstate dihydrate is dissolved to form a transparent solution A, then ammonium acetate is added and stirred evenly, then oleic acid is added and mixed evenly, a pH value is regulated to 1.3 to 1.7, hydrothermal reaction is performed at the temperature of 160-180 DEG C for 12-24 hours, centrifugation and drying are performed to obtainWO3.0.33H2O powder; WO3.0.33H2O powder and thioacetamide are mixed according to the mole ratio of 1:20, and then calcination is performed to obtain the three-dimensional self-assembled flower-like tungsten disulfide electrode material. The hydrothermal synthesis method is utilized to add the oleic acid and ammonium acetate in the mixed alcohol water system to control the nucleation growth of tungsten trioxide and to control the morphology, the synthesis method is simple, easy to control and good in product dispersivity, and finally the three-dimensional self-assembled flower-like tungsten disulfide electrode material is obtained through vulcanization, is uniform in morphology and high in purity and has better application in the field of electrochemistry.
Owner:SHAANXI UNIV OF SCI & TECH

Iron disulfide/nitrogen-doped graphene nanocomposite, preparation and application

InactiveCN106702423AExcellent performance of electrocatalytic water splitting hydrogenEasy to operateElectrodesNitrogen doped grapheneHydrolysis
The invention belongs to the technical field of hydrogen evolution electrocatalysis and discloses an iron disulfide/nitrogen-doped graphene nanocomposite, preparation and application. A preparation method includes the following steps that an iron disulfide precursor solution is mixed with graphene oxide, a hydrothermal method reaction is carried out, and the iron disulfide/nitrogen-doped graphene nanocomposite is obtained. L-cysteine is adopted as a sulfur source and a reducing agent, ammonia water serves as a nitrogen source, ferric acetylacetonate serves as iron salt, a FeS2 nanocube is subjected to homogeneous nucleation growth on an NG surface through a hydrothermal method, and the FeS2/NG nanocomposite is obtained, wherein the nitrogen content ranges from 0.38 wt% to 1.12 wt%; and by means of good hydrogen evolution electrocatalysis performance of iron disulfide and high specific surface area and high conductivity of nitrogen-doped grapheme, a good electrocatalysis hydrolysis hydrogen production effect is shown, and the nanocomposite can be applied to the field of hydrogen evolution electrocatalysis, especially preparation of hydrogen evolution electrocatalysis materials and can be directly used as an electrode material for electrocatalysis hydrolysis hydrogen production.
Owner:GUANGDONG IND TECHN COLLEGE

Antibacterial regenerated polyester fiber lining cloth and production process thereof

The invention relates to antibacterial regenerated polyester fiber lining cloth and a production process thereof. The lining cloth is weaving lining cloth, and warp yarns and weft yarns of the liningcloth contains antibacterial modified regenerated polyester fiber low stretch yarns. The production process comprises the following steps: preparing regenerated polyester fibers by virtue of a physical regeneration method or a chemical regeneration method, modifying the surfaces of the regenerated polyester fibers to generate functional groups capable of adsorbing silver ions on the surfaces of the regenerated polyester fibers, wherein the functional groups service as the nucleation growth foundation of reduced nano-silver particles, are continuously accumulated with a reducing agent to generate silver atoms, and the nano-silver particles are grown; and carrying out high-temperature preheating on silver-loaded regenerated polyester fibers so as to softening the surfaces of the regeneratedpolyester fibers, embedding the nano-silver particles into the surfaces of the regenerated polyester fibers under a negative pressure, and carrying out rapid cooling and formation, so as to embed thenano-silver particles into the surfaces of the regenerated polyester fibers. According to the production process, the problems that the antibacterial effect of the lining cloth is poor, the productioncost is high, and the antibacterial property is difficult to be guaranteed in the prior art are solved; and the antibacterial modified regenerated polyester fiber low stretch yarns have the antibacterial performance, and the antibacterial property is not degraded after the antibacterial modified regenerated polyester fiber low stretch yarns are washed for several times.
Owner:南通源佑纺织科技有限公司

Composite pyrophyllite material

The invention relates to a seal pressure-transmitting medium material used for synthesizing superhard material such as diamond, cubic boron nitride, composite slice, and the like, in particular to a composite pyrophyllite material The composite pyrophyllite material consists of the following raw materials by weight percentage: 50 percent to 60 percent of pyrophyllite, 12 percent to 20 percent of sericite, 8 percent to 15 percent of kaolinite, 5 percent to 10 percent of boehmite and 5 percent to 10 percent of cementing compound. The composite pyrophyllite powder briquette manufactured by the invention has good performances for sealing, pressure-transmitting, heat-preserving and insulating, provides a good environment for the nucleation growth of the superhard material, has stable flowing property and is easy for forming a sealing surface, thereby effectively reducing the phenomena of deflation and explosion during the superhard material synthesis, saving electrical energy due to the good heat preservation performance, improving the productivity due to the good pressure-transmitting performance and reducing the cost. Only South Africa owns the industrial pyrophyllite in the field of the superhard material in the world, and only Beijing Mentougou owns mineral resource in China which is insufficient. The composite pyrophyllite material is the substitute of the two and is better than the two.
Owner:李学增

Growth technology for growing high-quality GaN crystal material on sapphire patterned substrate

The invention discloses a growth technology for growing a high-quality GaN crystal material on a sapphire patterned substrate. The growth technology comprises the following step of: using MOCVD (metal organic chemical vapor deposition) equipment to grow a GaN crystal on the sapphire substrate. The growth technology is characterized in that a nucleating layer material of the GaN crystal is grown at a low temperature on the substrate, and the re-crystallization growth of the GaN crystal is carried out after the temperature of a substrate material is risen after the growth of a nucleating layer is completed. After a crystallization procedure is terminated, the temperature of the substrate material is reduced, and the nucleation growth of the GaN crystal, namely the three-dimensional growth of the GaN crystal, is carried out again. After a re-nucleation procedure is terminated, the temperature of the substrate material is risen again to carry out the re-crystallization growth of the GaN crystal. After the growth in each step above is completed, the temperature of a substrate slice is risen, and meanwhile, the pressure of a reaction chamber is reduced to carry out the growth of the GaN crystal material, so that a GaN material layer which has a flat surface and is further high in quality can be obtained. By using a process of combining two-time low-temperature nucleating layer growth with a high-temperature re-crystallization procedure, which is adopted in the growth technology, compared with a conventional single-time nucleating layer growth process, the GaN material with a lower defect concentration and lower material stress can be obtained.
Owner:姜涛
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products