Method for preparing monolayer molybdenum disulfide

A single-layer molybdenum disulfide and silicon dioxide technology is applied in coatings, gaseous chemical plating, and metal material coating processes. Danger, effect of simplifying the heating process

Inactive Publication Date: 2017-06-13
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, when the CVD method is used to prepare molybdenum disulfide, the substrate needs to be thoroughly cleaned, and toxic and dangerous d

Method used

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  • Method for preparing monolayer molybdenum disulfide
  • Method for preparing monolayer molybdenum disulfide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Atmospheric pressure chemical vapor deposition method is adopted; a certain mass of sulfur powder 0.2g and molybdenum trioxide powder 0.01g is weighed, and placed in two quartz boats; the cleaned silicon dioxide / silicon substrate is placed face down in three In the quartz boat of molybdenum oxide powder, 1cm downstream of the molybdenum source, and place it in the high temperature zone in the middle of the tube furnace, place the quartz boat containing the sulfur powder in the low temperature zone at the front of the tube furnace; before heating, First pass nitrogen gas for 15 minutes at a flow rate of 250 sccm to discharge the air in the tube furnace, then continue to feed nitrogen gas with a flow rate of 75 sccm as a protective atmosphere, start heating, heat the tube furnace to a temperature of 800°C within 25 minutes, and then maintain this temperature Molybdenum disulfide was grown for 40 minutes; after the growth was over, 50 sccm of nitrogen gas was continued to f...

Embodiment 2

[0027] Atmospheric pressure chemical vapor deposition method is adopted; a certain mass of sulfur powder 0.2g and molybdenum trioxide powder 0.01g is weighed, and placed in two quartz boats; the cleaned silicon dioxide / silicon substrate is placed face down in three In the quartz boat of molybdenum oxide powder, 1.5cm downstream of the molybdenum source, and place it in the high temperature zone in the middle of the tube furnace, and place the quartz boat containing the sulfur powder in the low temperature zone at the front of the tube furnace; before heating First pass nitrogen gas for 25 minutes at a flow rate of 200 sccm, discharge the air in the tube furnace, then continue to feed nitrogen gas with a flow rate of 65 sccm as a protective atmosphere, start heating, heat the tube furnace to a temperature of 820°C within 35 minutes, and then keep it Molybdenum disulfide was grown at a temperature of 35 minutes; after the growth was completed, 70 sccm of nitrogen was continued to...

Embodiment 3

[0029] Atmospheric pressure chemical vapor deposition method is adopted; 0.2g of sulfur powder and 0.02g of molybdenum trioxide powder are weighed and placed in two quartz boats; In the quartz boat of molybdenum oxide powder, 2.5cm downstream of the molybdenum source, and place it in the high temperature zone in the middle of the tube furnace, place the quartz boat containing the sulfur powder in the low temperature zone at the front of the tube furnace; before heating First pass nitrogen gas for 25 minutes at a flow rate of 200 sccm, discharge the air in the tube furnace, then continue to feed nitrogen gas with a flow rate of 65 sccm as a protective atmosphere, start heating, heat the tube furnace to a temperature of 790°C within 35 minutes, and then maintain this temperature Molybdenum disulfide was grown at a temperature of 35 minutes; after the growth was completed, 70 sccm of nitrogen was continued to be introduced, and the tube furnace was naturally lowered to room temper...

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Abstract

The current methods for preparing single-layer molybdenum disulfide include micromechanical exfoliation, liquid-phase ultrasonic exfoliation, lithium ion intercalation, laser method, annealing layer-by-layer thinning method, and chemical vapor deposition method. Molybdenum disulfide prepared by chemical vapor deposition method has large size, uniform surface and controllable layer number. When molybdenum disulfide is prepared by chemical vapor deposition, molybdenum disulfide is easy to nucleate and grow on defects such as impurities or scratches on the substrate. If the substrate is not cleaned cleanly, molybdenum disulfide will easily grow into multi-layer or solid materials. To clean the substrate thoroughly, toxic and dangerous drugs such as acetone and piranha solution will be used. These drugs are toxic to the human body, so the operation process is potentially dangerous. Based on the above problems, the object of the present invention is to provide a simplified chemical vapor deposition method for the preparation of single-layer molybdenum disulfide, which can produce high-quality single-layer molybdenum disulfide without using toxic hazards such as acetone and piranha solution. Drugs are used to clean the substrate, avoiding potential danger.

Description

technical field [0001] The invention relates to a method for preparing a nanometer material, in particular to a method for preparing a single-layer molybdenum disulfide. Background technique [0002] The successful preparation of graphene in 2004 proved that two-dimensional materials can exist stably in nature, and also started the research boom of two-dimensional nanomaterials. Molybdenum disulfide can be exfoliated into a two-dimensional material with a single atomic layer like graphene, and has great potential application value in electronic devices, catalysis, and optoelectronics. [0003] At present, the methods for preparing single-layer molybdenum disulfide can be roughly divided into two categories. One is the "top-down" preparation method of exfoliating a single layer from a bulk material, including micromechanical exfoliation, liquid-phase ultrasonic exfoliation, Lithium ion intercalation method, laser method and annealing layer-by-layer thinning method, etc. The...

Claims

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Application Information

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IPC IPC(8): C23C16/453C23C16/30
CPCC23C16/453C23C16/305
Inventor 何大伟董艳芳何家琪赵思淇王永生
Owner BEIJING JIAOTONG UNIV
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