Semiconductor device, n-type MOS transistor and manufacturing method thereof
A technology for MOS transistors and manufacturing methods, which is applied in the field of n-type MOS transistors and their manufacturing, and semiconductor devices, and can solve problems such as insufficient suppression of hot carrier injection effects
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[0035] In the present invention, a fluorine ion implantation area is formed on the surface of the semiconductor substrate above the low-doped source / drain area of the n-type MOS transistor area of the high voltage device area, and the fluorine ion in the fluorine ion implantation area and the silicon in the semiconductor substrate form fluorine The silicon group prevents the formation of charge traps, prevents the accumulation of charges in the low-doped source / drain regions under voltage application, and forms a hot carrier effect.
[0036] The present invention performs rapid thermal annealing after low-doping ion implantation in the n-type MOS transistor region of the high-voltage device region. While activating impurities and eliminating defects caused by ion implantation, the TED effect and self thermal diffusion can be used to make the junction more changed. In order to gradually change, so as to further reduce the drain channel surface electric field, to achieve the pur...
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