Process for manufacturing gallium nitride-base GaN power integrated circuit

Abstract

The invention discloses a process for manufacturing a gallium nitride-base GaN power integrated circuit. According to the process, current channels in a high-voltage area and a low-voltage area are cut off by the anisotropic etching of an inductively coupled plasma (ICP) etching technology to realize electric isolation in the areas. An F-ionic layer with negative charges is formed in an AlGaN potential barrier area under a metal gate Ni / Au by utilizing a reactive ion etching (RIE) autoregistration plasma etching technology, and high-density two-dimensional electron gas in a heterogenous junction is exhausted, so that an exhausted channel is converted into an enhanced channel, and the normally-closed characteristic of an AlGaN / GaN high electron mobility transistors (HEMTs) device is formed. By means of a reduced surface field (Resurf) voltage withstanding structure and a surface source field plate of an epitaxial layer GaN / silicon substrate, the electric-field distribution of a drifting area of a high-voltage device is optimized, an offset area of the device is designed, and the influence of Miller capacitance Cgd on the frequency response of the device is shielded to acquire normally-closed gallium nitride-base AlGaN / GaN (HEMTs) high-voltage device which is applied to a high-speed switch.

Description

technical field [0001] The invention relates to gallium nitride-based power electronics technology compatible with silicon technology, in particular to the development of enhanced AlGaN / GaN HEMTs high-voltage devices based on silicon substrates and monolithic gallium nitride-based integrated circuits. Background technique [0002] With the development of microelectronics technology, the performance of traditional Si and GaAs semiconductor devices has approached the theoretical limit determined by their materials themselves. The wide bandgap semiconductor gallium nitride (GaN) has a large bandgap (3.4eV), a high critical breakdown electric field (3MV / cm), and a high saturation electron drift velocity (3×10 7 cm / s), high-concentration two-dimensional electron gas (2×10 13 cm 2 ), high thermal conductivity, strong radiation resistance and good chemical stability, etc., have been used as the core components of microwave power amplification in microwave communication systems, r...

AI Technical Summary

Problems solved by technology

[0004] Due to the piezoelectric polarization and spontaneous polarization characteristics of AlGaN / GaN materials, the channel of conventional HEMTs is depleted, and the gate-controlled switch shows a normally-on state, which is not only incompatible with the design of mainstream general-purpose electronic circuit systems, but also It is also necessary to add an additional DC power supply to power the normally-on device, thereby significantly increasing the power consumption and volume of the system. Therefore, a power integrated circuit integrating enhanced AlGaN / GaN HEMTs devices that can withstand high breakdown voltage is developed, especially compatible with Gallium nitride integrated circuits in mainstream silicon-based processes are critical in modern power electronics applications

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