Power semiconductor device with wave type field limiting ring structure and preparation method of device
A power semiconductor, wave-type technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting device robustness, device failure, dynamic avalanche, etc., to suppress dynamic avalanche and reduce surface electric field Effect
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[0031] The present invention will be described in detail below with reference to the drawings.
[0032] Reference figure 2 , To explain the present invention in detail, a power semiconductor device with a wave-shaped field limiting ring structure and a preparation method thereof, comprising: a P-type substrate 1, and an anode metal layer is provided at the bottom of the P-type substrate 1 as The collector of the device is provided with an N-type buffer layer 2 above the P-type substrate 1, an N-type epitaxial layer 3 is provided on the N-type buffer layer 2, and the N-type epitaxial layer 3 is divided into a cell area and a transition area And the terminal area, a field oxide layer 9 is provided on the N-type epitaxial layer 3, two cell area gate trenches 4-1, 4-2 are provided in the cell area, and three transition areas are provided in the transition area The gate trenches 4-3, 4-4, 4-5 are provided with a P-type body region 6 between the gate trenches 4-1, 4-2 of the two cell ...
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