Gallium nitride semiconductor device and preparation method therefor

Abstract

The invention relates to the technical field of semiconductor devices, and provides a gallium nitride semiconductor device. The semiconductor device comprises a gallium nitride epitaxial layer; a silicon nitride and plasma enhanced ethyl orthosilicate composite dielectric layer which is disposed on the gallium nitride epitaxial layer; a source electrode, a drain electrode and a grid electrode, which are all disposed on the composite dielectric layer and respectively pass through the composite dielectric layer to be connected with the gallium nitride epitaxial layer; insulating layers which are disposed on the source electrode, the drain electrode, the grid electrode and the composite dielectric layer, and field plate metal layers which is disposed on the insulating layers. According to the invention, the semiconductor device is not liable to break down an aluminium nitride gallium layer, thereby avoiding the electric leakage and breakdown of the gallium nitride semiconductor device, effectively protecting the gallium nitride semiconductor device, and improving the reliability of the gallium nitride semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a gallium nitride semiconductor device and a preparation method thereof. Background technique [0002] Gallium nitride has the advantages of large band gap, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, so gallium nitride can be used to make semiconductor materials to obtain gallium nitride semiconductor devices . [0003] In the prior art, a gallium nitride semiconductor device is prepared by forming a silicon nitride layer on the surface of the gallium nitride epitaxial layer, etching a source contact hole and a drain contact hole on the silicon nitride layer, and Deposit metal in the electrode contact hole and drain contact hole to form the source and drain; then etch the silicon nitride layer and the aluminum gallium nitride layer in the gallium nitride epitaxial layer to form a ...

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, due to the high electric field density, the leakage and breakdown of the GaN semiconductor device will be caused, which will damage the GaN semiconductor device and reduce the reliability of the GaN semiconductor device.

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