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Method for manufacturing high reliability glass passivated miniature surface-mounted diode

A technology of glass passivation and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unsatisfactory user use, circuit board line damage, etc., to achieve improved thermal matching performance, high reliability, small size effect

Inactive Publication Date: 2017-11-24
CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the development of semiconductor discrete devices towards miniaturization and surface-mounting, the market demand for miniature high-reliability glass-passivated surface-mount diodes is increasing. Many complete machine manufacturers are changing the design of circuit boards. It is changed to a multi-layer circuit board, and it is gradually developing from manual welding to automatic welding. At present, most of the existing axial devices need to be punched and welded on the circuit board before they can be used. For multi-layer multi-layer circuit board, the way of punching holes will damage the circuit on the circuit board, which cannot meet the needs of users, and the miniature glass passivated surface mount diode has the characteristics of small size, easy installation, high reliability, etc., and has high market promotion value

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] a. Die preparation:

[0029] a-1, form a PN junction on a single crystal silicon wafer by deep diffusion, and prepare a metal thin film layer on the P-side and N-side of the PN junction by electron beam evaporation;

[0030] a-2. The monocrystalline silicon wafer coated with the metal film layer is sand blown into shape by sand blowing cutting;

[0031] a-3. Use a cleaning agent to corrode and clean the cut tube cores. The corroded tube cores are ultrasonically cleaned with acetone, then ultrasonically cleaned with alcohol, and then dehydrated and dried;

[0032] b. Electrode welding: The electrode and the metal lead are welded into an integral electrode lead through high-temperature vacuum sintering, and then the electrode lead, tube core, and electrode lead are stacked vertically in the graphite mold in turn, and then the graphite mold is put into vacuum sintering In the furnace, the electrode lead and the tube core are welded and bonded at a high temperature of 650°...

Embodiment 2

[0048] a. Die preparation:

[0049] a-1, form a PN junction on a single crystal silicon wafer by deep diffusion, and prepare a metal thin film layer on the P-side and N-side of the PN junction by electron beam evaporation;

[0050] a-2. The monocrystalline silicon wafer coated with the metal film layer is sand blown into shape by sand blowing cutting;

[0051] a-3. Use a cleaning agent to corrode and clean the cut tube cores. The corroded tube cores are ultrasonically cleaned with acetone, then ultrasonically cleaned with alcohol, and then dehydrated and dried;

[0052] b. Electrode welding: The electrode and the metal lead are welded into an integral electrode lead through high-temperature vacuum sintering, and then the electrode lead, tube core, and electrode lead are stacked vertically in the graphite mold in turn, and then the graphite mold is put into vacuum sintering In the furnace, the electrode lead and the tube core are welded and bonded at a high temperature of 680°...

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Abstract

The invention provides a method for manufacturing high reliability glass passivated miniature surface-mounted diode. The method comprises diode core preparation, electrode welding and processing and package. A forward sand blasting cutting mode is used by chip separation to form a positive oblique angle, the surface electric field of a device is greatly reduced, and the stability of a chip surface is improved. In a chip corrosion process, acid corrosion is used to remove a chip mesa damage layer, a corrosion process is used to remove heavy metal ions adhered to the chip surface, a process of neutralizing alkali metal ions in a thermal passivation mode and growing a silicon dioxide passivation protection layer at the chip surface is used, the chip surface is cleaned to the maximum, the influence of interface charge is reduced, thus the device has good reverse performance, and the reliability of the product is improved. Passivation glass powder with the main components of zinc oxide, diboron trioxide and silicon dioxide is subjected to high temperature molding to realize the passivation and packaging effect of a chip mesa, the thermal expansion coefficients of an electrode and chip are same with that of a glass passivation layer, the ability of resistance to temperature shock of the product is improved, a special solder is used to sinter the electrode and an axial product, and a surface-mounted package structure is realized.

Description

technical field [0001] The invention relates to a method for manufacturing a high-reliability glass passivation miniature surface mount diode. Background technique [0002] With the development of semiconductor discrete devices towards miniaturization and surface-mounting, the market demand for miniature high-reliability glass-passivated surface-mount diodes is increasing. Many complete machine manufacturers are changing the design of circuit boards. It is changed to a multi-layer circuit board, and it is gradually developing from manual welding to automatic welding. At present, most of the existing axial devices need to be punched and welded on the circuit board before they can be used. For multi-layer multilayer circuit board, the way of punching holes will damage the circuit on the circuit board, which cannot meet the needs of users. However, the miniature glass passivated surface mount diode has the characteristics of small size, easy installation, high reliability, etc....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L21/304H01L21/306H01L21/56
CPCH01L21/3046H01L21/30604H01L21/56H01L29/6609
Inventor 古进杨波蔡美晨龚昌明张翼
Owner CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
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