Field stop type insulated gate bipolar transistor and manufacturing method thereof
A bipolar transistor and insulated gate technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of high cost
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[0046] Introduced below are some of the various embodiments of the invention, intended to provide a basic understanding of the invention. It is not intended to identify key or critical elements of the invention or to delineate the scope of protection.
[0047] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0048] figure 1 It is a flowchart showing the main steps of the manufacturing method of the FS type insulated gate bipolar transistor of the present invention. Such as figure 1 As shown, the manufacturing method of the FS type insulated gate bipolar transistor of the present invention mainly includes: step S101 of forming a buffer layer, forming N + Buffer layer; Step S102 of forming an N-type device layer, in N + The N-type device layer is formed by epitaxial growth on the N-type buffer layer; the step S103 of...
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