Gallium nitride lateral transistor with AlGaN/GaN heterojunction and manufacturing method of gallium nitride lateral transistor

Abstract

The invention provides a gallium nitride lateral transistor with an AlGaN / GaN heterojunction and a manufacturing method of the gallium nitride lateral transistor. A partial drift region of the transistor is an AlGaN / GaN heterojunction; the AlGaN / GaN heterojunction forms high-density two-dimensional electron gas (2DEG) at the interface of the heterojunction through spontaneous polarization and piezoelectric polarization effects; and the two-dimensional electron gas has very high mobility, so that the novel gallium nitride lateral transistor with the AlGaN / GaN heterojunction has very low on-resistance. When the transistor is turned off, the 2DEG is exhausted; and meanwhile, a new electric field peak is introduced to the surface of the transistor, so that the peak electric field at the edge of the gate of the lateral transistor is reduced, and the breakdown voltage of the transistor is improved.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a lateral semiconductor field effect transistor. Background technique [0002] Lateral semiconductor field effect transistors have the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, multi-subconduction, small power drive, and high switching speed. They are the core of intelligent power circuits and high-voltage devices. Due to the growing market demand for portable power management and automotive electronics, it is receiving increasing attention across the globe. [0003] The specific on-resistance of the high-voltage lateral double-diffused transistor increases with the 2.0th power of the breakdown voltage, which greatly limits its application in the high-voltage field. A technology of reducing the device surface electric field (Reduced Surface Field, RESURF) was proposed in 1979, which can well alleviate the c...

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Problems solved by technology

However, because AlGaN / GaN heterojunction transistors have a special withstand voltage mechanism, it is very difficult to obtain high withstand voltage AlGaN / GaN heterojunction transistors

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