121 results about "Composite grid" patented technology

A graphic user interface and method for creating and using grids includes displaying one or more grids as graphic objects having many of the properties associated with common graphic objects. As a result, the grids may be independently moved and/or resized in a manner similar to the moving and/or resizing of other graphic objects. In addition, the grids may be snapped to other grids in a manner similar to then snapping of other graphic objects to a grid. Thus, an complex composite grid can be formed by snapping multiple grids together.

The invention provides a forming method of a heterogeneous composite grid skin cabin, and relates to technical field of a composite forming process. The forming method comprises the following step (1)of making a forming mould of the heterogeneous composite grid carbon fiber prepreg cabin; the step (2) of spreading carbon cloth prepreg at a hoop rib deep-groove area; the step (3) of winding carbonfiber prepreg filaments, and filling the hoop rib deep-groove area; the step (4) of winding the carbon fiber prepreg filaments, and spreading the carbon fiber prepreg; the step (5) of making vacuum suction treatment for first time; the step (6) of spreading the carbon fiber prepreg, and making vacuum suction treatment for second time; the step (7) of winding the carbon fiber prepreg filaments, spreading the carbon fiber prepreg, and making vacuum curing treatment; and the step (8) of removing the mould, and obtaining the heterogeneous grid carbon fiber prepreg cabin. According to the formingmethod provided by the invention, the problems of demoulding of a male die disc, locating and pressurization of a female die disc and so forth are solved, and the internal quality and profile accuracyrequirements of products are ensured.

The invention discloses a manufacture technology for compositing a high-chromium alloy ceramic grain composite on the surface of a wear-proof machine part, which comprises the following steps of: preparing a high-chromium alloy ceramic grain composite grid; fixing the high-chromium alloy ceramic grain composite grid on the shaped surface; and casting the machine part, so that the high-chromium alloy ceramic grain composite grid is fixed on the surface of the machine part. The manufacture technology organically combines the wear-proof resistance of the ceramic grain material with the mechanical performance of the high chromium alloy, can manufacture the composite material with good rigidity, impact resistance and wear resistance, can manufacture the composite material with the shape of grid, can manufacture the composite with various shapes and sizes such as taper, arc, arc and the like, secondly casts the super-hard netty composite to form into the wear-proof product as required, and can effectively meet the requirement of the work condition of crushing resistance and wearing resistance of the equipment.

The invention provides a preparation method for a cylindrical composite grid structure. The preparation method comprises the steps of foam shaping, foam surface grooving, foam grooving concave surface processing, grid wet winding, rotary curing, demolding and the like, so that integral winding, co-curing and one-time forming of the composite grid structure are achieved. According to the preparation method for the cylindrical composite grid structure, grid structure wet winding integral forming and grid unitization processing are adopted; grid structure wet continuous winding is conducted; the cost is reduced; and the production efficiency is improved.

The invention relates to VDMOS and IGBT power device with composite grid and self-isolated grid-source. Wherein, it sets a thermal-oxidized SiO2 grid between source and multicrystal Si grid, and adds a Si3N4 layer to form a composite grid together with last grid to increase grid yield. Compared with prior art, this invention increase can fast shield grid window and generate only -very-thin oxidation layer to simplify manufacture technology, and needs low cost.

The invention relates to a building envelope structure, in particular to a dew formation-preventing building envelope structure for different thermal areas. The structure comprises a heat preservation layer, wherein a composite grid reinforcing rib waterproof vapor-permeable film coiled material is arranged on one side of the heat preservation layer; and a metal-plated waterproof vapor-isolating film coiled material or a surface non-woven cloth composite waterproof vapor-isolating film coiled material is arranged on the other side of the heat preservation layer. The composite grid reinforcing rib waterproof vapor-permeable film has high waterproof property and vapor permeability, and the metal-plated waterproof vapor-isolating film coiled material and the surface non-woven cloth composite waterproof vapor-isolating film coiled material have high waterproof property and vapor isolating property, so that dews are difficult to form on the building envelope structure. A surface metal-plated layer has good moistureproof and reflecting functions and the reflectivity of over 90 percent, effectively reduces building energy consumption and is suitable for curtain wall structures; and the surface composite non-woven cloth is characterized by high compatibility with cement mortar and other binders, and is more suitable for solid facing bricks or coating outer walls.

The invention discloses a production process of high-chromium alloy ceramic particle composite grids, which comprises the following steps of: melting high-chromium alloy, and then, putting the melted high-chromium alloy into steel ladle; adding sintered and crushed aluminum oxide and/or zirconium oxide particles of which the particle diameters are 80-100 meshes into the steel ladle and stirring and mixing, and then, injecting the mixed liquid into grid sand molds; and cooling and taking out grids to obtain high-chromium alloy ceramic particle composite grids. In the invention, the wear resistance of the ceramic particle materials and the mechanical properties of the high-chromium alloy are organically combined; the produced composite materials have high hardness, shock resistance and wear resistance, are latticed, can be prepared into tapered, cambered and circular grids in various shape sizes, and can also be prepared into grids in other shapes; and the super-hard latticed composites are cast for the second time to form required wear resistant products to achieve the anti-wear effect of mechanical equipment.

A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities. The invention provides the CMOS image sensor structure with the crosstalk improvement.

The invention discloses a manufacturing method for an IGBT chip with a composite grid. The method comprises the following steps: forming a first oxide layer on wafer substrate; etching a first presetposition on the first oxide layer and the wafer substrate corresponding to the lower portion of the first preset position to form a groove; re-etching to remove the first oxide layer, and forming a second oxide layer on the surface of the wafer substrate and on the inner surface of the groove; filling the groove with polysilicon, forming a polysilicon layer on the second oxide layer, and forming apolysilicon body through connecting polysilicon with the polysilicon layer in the groove into one body; and etching a third preset position on the polysilicon layer to enable the polysilicon body tobe divided into a plane grid and a groove grid with an auxiliary grid. The IGBT chip with the composite grid manufactured by the manufacturing method not only has the advantages of good voltage resistance of flat grids, but also is the advantageous in that the groove grid increases the cell density, thus greatly increasing the electric current density of the chip.

The present disclosure relates to an image sensor, electronic device and its manufacturing method. In one embodiment, the present disclosure relate to an image sensor which may comprise a substrate, afirst surface and a second surface opposite to the first surface; a pixel sensor array arranged within the substrate; a composite grid arranged over a first surface of the said substrate and having an opening corresponding to a pixel sensor in the pixel sensor array; wherein the said composite grid has a dielectric layer, a hard mask layer arranged over the dielectric layer, and a metal layer surrounding the dielectric layer and the hard mask layer.

The invention provides a multilayer composite grid sound barrier. The multilayer composite grid sound barrier is of a multilayer composite three-dimensional structure, and comprises surface layers, a plurality of middle sound isolation layers and light-weight sandwich layers, wherein the surface layers are positioned on the surfaces of the two sides of the multilayer composite grid sound barrier; the middle sound isolation layers are positioned between the two surface layers; the light-weight sandwich layers are positioned between the surface layers and the middle sound isolation layers and between the middle sound isolation layers and fill gaps; the surface layers and the middle sound isolation layers are made of sound isolation materials or composite sound isolation materials; the light-weight sandwich layers are made of sound absorption material. The sound barrier also comprises keels; the keels are positioned between the surface layers and the middle sound isolation layers, connect the surface layers and the middle sound isolation layers and connect the middle sound isolation layers to form a three-dimensional grid structure; and the keels positioned at the two sides of the each middle sound isolation layer are not overlapped with the extension lines of the keels arranged at the other side of the middle sound isolation layer. The multilayer composite grid sound barrier has excellent sound isolation performance; meanwhile, good heat insulation performance is realized; the structure is firm, simple and reasonable; the weight is light; the thickness is small; the installation is convenient; the production and manufacturing process is simple; and the cost is low. The invention also provides application of the multilayer composite grid sound barrier.

The invention relates to a composite grid field effect transistor. Wherein, the grid, source, leak and substrate form the main body; the insulated layer is between grid and substrate; the groove is on the substrate between source and leak; the source extends shallow source extending area at the left end of groove; the grid extends shallow leak extending area at the right end; the invention is characterized in that the grid is composite grid and multi-crystal grid, while the left and right parts are different in conductive types; the left grid toward to source is P-type multi-crystal grid, while the left part toward leak is N-type multi-crystal grid. The invention can obtain radio MOSFET driving current, transconductance and cut-off frequency, and release the maximum field strength, thermal electronic effect and short-groove effect at the end of leak drift area.

The invention discloses a BT composite safety explosion-proof metallized film, which comprises a conductive metal layer and an insulating film medium layer. A blank margin with a certain width is reserved at one end, and the metal layer is a BT composite grid structure, including an edge thickening area (5), a metallized grid (7), and connecting adjacent metallized grids ( 7) The metallized filaments (6) and the narrow strips of metallization (4) connecting the edge thickened areas (5) and the adjacent metallized grids (7). With such a structure, the edge thickening area is independent and complete, and the metallized film can be well attached when winding the capacitor core, and the gold spraying can be absorbed well; The strips of metal plating are connected, the original metallized filaments are not damaged, and the capacitor capacity is not easily attenuated.

An improved back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor, and associated methods, improve phase detecting capability. The BSI CMOS image sensor has an array of pixels that include a phase detecting pixel (PDP), a composite grid formed of a buried color filter array and composite metal/oxide grid, and a photodiode implant corresponding to the PDP. A PDP mask is fabricated with a deep trench isolation (DTI) structure proximate the PDP and positioned to mask at least part of the photodiode implant such that the PDP mask is positioned between the composite grid and the photodiode implant.

The invention discloses a composite grid IGBT chip with a three-dimensional channel. The chip includes multiple cells. Each of the cells includes: a trench polysilicon gate electrode located in an intermediate area of the cell; a first oxide layer surrounding the trench polysilicon gate electrode; P well areas formed by injecting P type impurities into the cell on both side areas of a trench; doping areas formed by injecting impurities into the P well areas on both sides of the trench, wherein the width of the doping areas is smaller than the width of the P well areas, and the doping areas include an N++ doping area and a P++ doping area; second oxide layers are located on two side areas, being on the cell, of the doping areas, wherein the second oxide layers are used for covering the surface of the two side areas of the two P well areas, the surface of the P well areas without the doping areas, and partial doping areas; planar polysilicon gate electrodes formed on the second oxide layers; and third oxide layers covering the planar polysilicon gate electrodes. The chip can enable the electric current density of the IGBT chip to be improved, so as to reduce a conducting voltage drop.

The invention discloses a composite drain-based AlGaN/GaN MIS-HEMT (Metal-Insulator-Semiconductor High-Electron-Mobility Transistor) high-voltage device and a fabrication method thereof. The structure of the device comprises a substrate, a GaN buffer layer, an intrinsic GaN channel layer, an AlN isolating layer and an AlGaN barrier layer sequentially from the bottom up, a source, a grid and a composite drain are arranged on the AlGaN barrier layer, and an insulating medium layer is arranged between the grid and the AlGaN barrier layer; a linear AlGaN layer, a P-type GaN epitaxial layer and a base are sequentially epitaxially arranged on the top of the AlGaN barrier layer between the grid and the composite drain. The invention has the advantages that: when the device is switched on, the 2DEG (2-dimensional electron gas) concentration of a first region and a second region between the grid and the drain increases, and the resistance decreases; when the device is switched off, the 2DEG of the first region is reduced, the 2DEG of the second region is the same as when the device is switched on, the width of the depletion region of the device is increased, the distribution of an electric field is changed, and the breakdown voltage of the device is increased; the composite grid structure prevents the electric field peak from appearing at the edge of the drain, thus increasing the breakdown voltage of the device; an insulated grid structure prevents grid leakage current, and thereby the performance of the device is enhanced.