Novel two-sided thin film solar cell and industrial manufacturing method thereof

A thin-film solar cell and solar cell technology, which is applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of low photoelectric conversion efficiency and increase battery costs, so as to improve photoelectric conversion efficiency, reduce device costs, and reduce cost effect

Inactive Publication Date: 2014-11-19
YUNNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As stated in the Chinese patent application document with publication number CN103700769A (application number 201310651418.4), this type of solar cell uses relatively expensive organic molecular conductive materials (Spiro-OMeTAD, P3HT, PTAA , TAPC, NPB, TPD, etc.) as the hole-conducting layer (HTM), and expensive gold (Au) or platinum (Pt) must be used as the metal back electrode, which greatly increases the cost of the battery
The literature "Etgar, L. et al. , J. Am. Chem. Soc. 134, 17396–17399 (2012)" reported perovskite thin-film solar cells that directly cancel hole transport materials, but the photoelectric conversion efficiency is low ( The highest efficiency is only 8%)

Method used

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  • Novel two-sided thin film solar cell and industrial manufacturing method thereof
  • Novel two-sided thin film solar cell and industrial manufacturing method thereof
  • Novel two-sided thin film solar cell and industrial manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1. The atomic layer deposition (ALD) method was used to prepare dense TiO with a thickness of 35nm on the FTO conductive glass 2 film;

[0025] 2. Then anneal at 450°C for 30 minutes;

[0026] 3. Vacuum deposition of 300nm ABX at a substrate temperature of 80°C and a pressure of 10Pa 3 Organic-inorganic hybrid perovskite absorber layer;

[0027] 4. PECVD deposition of p-type hydrogenated silicon thin film interface layer under the conditions of Table 2;

[0028] Substrate temperature (°C) RF power density (mW / cm 2 ) air pressure (Pa) H dilution ratio (H 2 / SiH 4 ) Deposition time (min) doping concentration p-Si:H 50-100 100-1000 100-1000 50,100,150 1-5 0.5%BF 3

[0029] 5. PECVD deposition p under the conditions of Table 3 + Hydrogenated silicon thin film heavily doped layer;

[0030] Substrate temperature (°C) RF power density (mW / cm 2 ) air pressure (Pa) H dilution ratio (H 2 / SiH 4 ) Depositi...

Embodiment 2

[0033] 1. Use FTO glass as the substrate for laser etching and cleaning;

[0034] 2. Prepare a dense ZnO film with a thickness of 35nm by sputtering;

[0035] 3. Anneal the ZnO film at 450°C for 30 minutes;

[0036] 4. Vacuum deposition of 300nm ABX under the conditions of substrate temperature of 80°C and pressure of 10Pa 3 Organic-inorganic hybrid perovskite absorber layer;

[0037] 5. PECVD deposition of p-type hydrogenated silicon carbon film interface layer under the conditions of Table 4;

[0038] Table 4 PECVD preparation conditions of p-SiC:H back electric field hole conduction layer

[0039]

[0040] 6. PECVD deposition of p+ hydrogenated silicon carbon thin film heavily doped layer under the conditions of Table 5;

[0041] Substrate temperature (°C) RF power density (mW / cm 2 ) air pressure (Pa) H dilution ratio (H 2 / SiH 4 ) Deposition time (min) doping concentration p-SiC:H 50-150 100-1000 100-1000 50,100,150 1-5 1.5%TM...

Embodiment 3

[0044] 1. Using ZnO glass as the substrate;

[0045] 2. Vacuum deposition of 300nm ABX under the conditions of substrate temperature of 80°C and pressure of 10Pa 3 Organic-inorganic hybrid perovskite absorber layer;

[0046] 3. PECVD deposition of p-type hydrogenated silicon carbon film interface layer under the conditions of Table 6;

[0047] Substrate temperature (°C) RF power density (mW / cm 2 ) air pressure (Pa) H dilution ratio (H 2 / SiH 4 ) Deposition time (min) doping concentration p-SiC:H 50-150 100-1000 100-1000 50,100,150 1-5 0.5%TMB

[0048] 4. PECVD deposition of p+ hydrogenated silicon carbon thin film heavily doped layer under the conditions of Table 7;

[0049] Table 7p + -PECVD Preparation Conditions of SiC:H Hole Conducting Layer in Back Electric Field

[0050]

[0051] 5. Use the magnetron sputtering coating system to sputter on the surface of the p-layer silicon film to prepare the ITO transparent conductive ...

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PUM

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Abstract

The invention belongs to the field of high-efficiency and low-cost thin film solar cells and particularly provides a novel two-sided thin film solar cell and an industrial manufacturing method thereof. Firstly, laser segmentation is conducted on TCO-1 (front electrode and electron transport materials (ETM)), an ABX3 (A=CH3NH3, B=Pd, Sn and the like, and X=I, Cl, Br and the like) perovskite absorbing layer (the thickness ranges from 200 nm to 400 nm, the band gap width is 1.5 eV and the electron affinity is 3.93 eV) is deposited on TCO-1 conducting glass (the band gap width is larger than 3.2 eV and the electron affinity is about 4.8 eV) obtained after laser segmentation in a dual-source coevaporation mode, samples are transferred into PECVD equipment, a gradient doped p / p<+> type hydrogenated silicon-based thin film (the thickness ranges from 5 nm to 30 nm, the band gap width ranges from 1.8 eV to 2.0 eV, and the electron affinity is 3.45 eV) is deposited, and a back-side electric field is established; after secondary laser segmentation is immediately conducted on the samples, the samples are transferred into vacuum equipment, TCO-2 (ITO or ZnO or the like) is deposited, and finally third laser segmentation is conducted on the samples obtained after the procedures so as to establish composite grid line electrodes. Finally, the high-efficiency and low-cost novel two-sided light-catching solar cell is obtained.

Description

technical field [0001] The present invention relates to a novel double-sided thin-film solar cell and its industrial manufacturing method, in particular to a P-type silicon-based thin film that replaces the expensive organic hole conductor (Spiro-OMeTAD) commonly used in the prior art and integrates the back metal The invention relates to a perovskite solar cell whose electrode is replaced by a window electrode such as an ITO transparent conductive film and a manufacturing method thereof, belonging to the field of high-efficiency and low-cost thin-film solar cells. Background technique [0002] A solar cell is a device that uses the photovoltaic effect to directly convert solar energy into electrical energy. Since the commercialization of terrestrial solar cells in the mid-1970s, silicon has dominated as the basic cell material, and it is certain that this situation will not change fundamentally for a long time to come. From the point of view of material physics, silicon ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/00H10K30/30H10K30/82Y02E10/549
Inventor 胡志华施光辉段良飞
Owner YUNNAN NORMAL UNIV
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