AlGaN/GaN high-voltage device based on super junction leakage field plate and manufacturing method thereof

Abstract

The invention discloses an AlGaN/GaN high-voltage device based on a super junction leakage field plate and a manufacturing method thereof. The high-voltage device structurally comprises a substrate, a GaN buffer layer, an intrinsic GaN (or AlGaN) channel layer, an A1N isolation layer and an A1GaN barrier layer from bottom to top. A source electrode, a grid electrode and a composite drain electrode are arranged on the A1GaN barrier layer. The composite drain electrode comprises a drain electrode and a drain electrode field plate. A linear A1GaN layer, a grid source field plate, a P-type GaN (or InGaN) layer and a base electrode are arranged between grid sources and between the grid leaks. The AlGaN/GaN high-voltage device based on the super junction leakage field plate has the advantages that the 2DEG concentration of a first area, the 2DEG concentration of a second area, and the 2DEG concentration of a third area are increased at the device breakover time, so that resistance is reduced, and device breakover resistance is reduced; the 2DEG concentration of the first area, the 2DEG concentration of the second area, and the 2DEG concentration of the third area at device cut-off time are the same as the 2DEG concentration of the first area, the 2DEG concentration of the second area, and the 2DEG concentration of the third area at the device breakover time, so that the width of an device exhausted area is increased, the distribution of an electric field is changed, and device breakdown voltage is increased; a composite drain electrode structure and a grid source field plate ensure that electric field peak value cannot occur at the edge of the drain electrode and the boundary of a source close to a grid, so that the breakdown voltage is increased.

Description

technical field [0001] The invention relates to a high-voltage device and a manufacturing method thereof, in particular to an AlGaN / GaN high-voltage, low-on-resistance high-voltage device based on a superjunction leakage field plate and its manufacture, which can be used to manufacture high-voltage and low-on-resistance AlGaN / GaN A GaN high electron mobility transistor belongs to the technical field of microelectronics. Background technique [0002] In recent years, the third-generation wide bandgap semiconductors represented by SiC and GaN have the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturated electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. Widespread concern. In theory, high electron mobility transistor HEMT, light emitting diode LED, laser diode LD and other devices made of these materials have obvious superior characteristics than existing devices, so i...

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Problems solved by technology

[0007] However, the high-voltage devices with the above two structures all have the disadvantage of large on-resistance

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