Secondary extension structure of silicon carbide
A secondary epitaxy, silicon carbide technology, used in electrical components, circuits, semiconductor devices, etc., can solve problems such as damage, low injection efficiency, and material property degradation
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[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0027] Such as Figure 1-3 As shown, the silicon carbide secondary epitaxial material structure for the preparation of silicon carbide devices includes: a silicon carbide single crystal substrate 1, a primary homogeneous epitaxial layer 5 formed on the surface of the silicon carbide single crystal substrate 1, and a primary homogeneous epitaxial layer 5 5 The secondary epitaxial layer 6 is formed on the surface. The secondary epitaxial layer 6 is formed after the primary homoepitaxial layer 5 is patterned and processed. The primary homoepitaxial layer 5 includes p-type silicon carbide buffer layer 2, n -Type silicon carbide active layer 3 and an intrinsic silicon carbide layer 4 that is not intentionally doped.
[0028] The invention is suitable for the preparation of ohmic contacts between the source and drain parts of the silicon carbide MESFET device. In the sp...
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