p-GaN enhanced AlGaN/GaN high-electron-mobility transistor

Abstract

The invention discloses a p-GaN enhanced AlGaN/GaN high-electron-mobility transistor with a partially intrinsic GaN cap layer. According to the transistor structure, the intrinsic GaN cap layer is introduced into a transistor grid electrode and the edge of a p type GaN medium layer of the transistor grid electrode, the two-dimensional electron gas concentration of a conducting channel in the area can be reduced by means of the intrinsic GaN cap layer, and the electric field modulation effect is achieved. A new electric field peak is generated, so that the high electric field of the grid edge is reduced, and an electric field on the surface of the transistor is distributed more evenly. Compared with a traditional p-GaN enhanced structure, the breakdown voltage and reliability of the novel structure are obviously improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a p-GaN enhanced AlGaN / GaN high electron mobility transistor. Background technique [0002] Due to the limitations of the first-generation and second-generation semiconductor materials represented by Si and GaAs, the third-generation wide-bandgap semiconductor materials have been developed rapidly because of their excellent performance. As one of the cores of the third-generation semiconductor materials, GaN material is special in its polarization effect compared with Si, GaAs and SiC. Taking advantage of this particularity, people have developed AlGaN / GaN high electron mobility transistors, and AlGaN / GaN HEMTs are GaN-based microelectronic devices based on AlGaN / GaN heterojunction materials. The AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas (two dimensional electron gas, 2DEG) at the heterojunction interface through spontaneous polariz...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the device avalanche breakdown and current collapse effect caused by the peak electric field at the gate edge of the p-GaN enhanced AlGaN / GaN high electron mobility transistor in the prior art, the threshold voltage and output current are reduced, and the reliability is reduced etc., the present invention provides a novel p-GaN enhanced AlGaN / GaN high electron mobility transistor

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