Embodiments of a
semiconductor device circuit (100) including a gate for biasing a
qubit device and a method for operating the device are disclosed. Embodiments may include a multiplexed array (102, 104, 106, 108) of
capacitor cells, where each
capacitor cell includes
transistor-controlled capacitors (C1, C2, C3, C4), where each
capacitor is connected between a drain of a respective
transistor (T1, T2, T3, T4) and ground, where each source of all transistors of all capacitor cells is connected to a common
control point (111), where the common
control point (111) is connected to the common
control point (111). And wherein each gate of the transistors of the capacitor
cell is individually
voltage controllable (Vg1, Vg2, Vgn). The embodiment may include a charging unit (110) connected to the common control point, and a discharging unit (112) connected to the common control point, where the charging unit and the discharging unit are alternately activatable.